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Morten Hannibal Madsen

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Published work

6 published item(s)

preprint2016arXiv

Electrical tuning of Rashba spin-orbit interaction in multigated InAs nanowires

Indium arsenide (InAs) nanowires (NWs) are a promising platform to fabricate quantum electronic devices, among others they have strong spin-orbit interaction (SOI). The controlled tuning of the SOI is desired in spin based quantum devices. In this study we investigate the possibility of tuning the SOI by electrostatic field, which is generated by a back gate and two side gates placed on the opposite sides of the NW. The strength of the SOI is analyzed by weak anti-localization effect. We demonstrate that the strength of SOI can be strongly tuned by a factor of 2 with the electric field across the NW, while the average electron density is kept constant. Furthermore a simple electrostatic model is introduced to calculate the expected change of SOI. Good agreement is found between the experimental results and the estimated Rashba type SOI generated by the gate-induced electric field.

preprint2016arXiv

Tuning Yu-Shiba-Rusinov States in a Quantum Dot

We present transport spectroscopy of sub-gap states in a bottom gated InAs nanowire coupled to a normal lead and a superconducting aluminium lead. The device shows clearly resolved sub-gap states which we can track as the coupling parameters of the system are tuned and as the gap is closed by means of a magnetic field. We systematically extract system parameters by using numerical renormalization group theory fits as a level of the quantum dot is tuned through a quantum phase transition electrostatically and magnetically. We also give an intuitive description of sub-gap excitations.

preprint2015arXiv

Alignment free characterization of 2D gratings

Fast characterization of 2-dimensional gratings is demonstrated using a Fourier lens optical system and a differential optimization algorithm. It is shown that both the grating specific parameters such as the basis vectors and the angle between them and the alignment of the sample, such as the rotation of the sample around the x-, y-, and z-axis, can be deduced from a single measurement. More specifically, the lattice vectors and the angle between them have been measured, while the corrections of the alignment parameters are used to improve the quality of the measurement, and hence reduce the measurement uncertainty. Alignment free characterization is demonstrated on both a 2D hexagonal grating with a period of 700 nm and a checkerboard grating with a pitch of 3000 nm. The method can also be used for both automatic alignment and in-line characterization of gratings.

preprint2015arXiv

Fast Characterization of Moving Samples with Nano-Textured Surfaces

We characterize nano-textured surfaces by optical diffraction techniques using an adapted commercial light microscope with two detectors, a CCD camera and a spectrometer. The acquisition and analyzing time for the topological parameters height, width, and sidewall angle is only a few milliseconds of a grating. We demonstrate that the microscope has a resolution in the nanometer range, also in an environment with many vibrations, such as a machine floor. Furthermore, we demonstrate an easy method to find the area of interest with the integrated CCD camera.

preprint2015arXiv

Imaging Scatterometry

We present an optical metrology system for characterization of topography of micro/nano-structures on a surface or embedded in a semi-transparent material. Based on the principles of scatterometry, where the intensity of scattered light is used as a 'fingerprint' to reconstruct a surface, this new imaging scatterometer can easily find areas of interest on the cm scale and measure multiple segments simultaneously. The imaging scatterometer measures structural features, such as height, width, and sidewall angle of a grating locally on few um2 areas with nm resolution. We demonstrate two imaging scatterometers, one built into an optical microscope and one in a split configuration. The two scatterometers are targeted characterization of mm2 and cm2 areas, respectively, and both setups are validated using nano-textured samples.

preprint2013arXiv

Advances in the theory of III-V Nanowire Growth Dynamics

Nanowire (NW) crystal growth via the vapour_liquid_solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III_V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.