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Source author record

Minh-Hai Nguyen

Minh-Hai Nguyen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phcond-mat.supr-conEmerging TechnologiesNeural and Evolutionary Computing

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Published work

7 published item(s)

preprint2021arXiv

Reservoir Computing with Superconducting Electronics

The rapidity and low power consumption of superconducting electronics makes them an ideal substrate for physical reservoir computing, which commandeers the computational power inherent to the evolution of a dynamical system for the purposes of performing machine learning tasks. We focus on a subset of superconducting circuits that exhibit soliton-like dynamics in simple transmission line geometries. With numerical simulations we demonstrate the effectiveness of these circuits in performing higher-order parity calculations and channel equalization at rates approaching 100 Gb/s. The availability of a proven superconducting logic scheme considerably simplifies the path to a fully integrated reservoir computing platform and makes superconducting reservoirs an enticing substrate for high rate signal processing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Nanosecond Reversal of Three-Terminal Spin Hall Effect Memories Sustained at Cryogenic Temperatures

We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit reasonable magnetic switching and reliable current switching by as short pulses as 1 ns of $<10^{12}$ A/m$^{2}$ magnitude, exceeding the expectation from conventional macrospin model. The pulse switching bit error rates reach below $10^{-6}$ for < 10 ns pulses. Similar performance is achieved with exponentially decaying pulses expected to be delivered to the SHE-MTJ device by a nanocryotron device in parallel configuration of a realistic memory cell structure. These results suggest the viability of the SHE-MTJ structure as a cryogenic memory element for exascale superconducting computing systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Enhancement of the Anti-Damping Spin Torque Efficacy of Platinum by Interface Modification

We report a strong enhancement of the efficacy of the spin Hall effect (SHE) of Pt for exerting anti-damping spin torque on an adjacent ferromagnetic layer by the insertion of $\approx$ 0.5 nm layer of Hf between a Pt film and a thin, < 2 nm, Fe$_{60}$Co$_{20}$B$_{20}$ ferromagnetic layer. This enhancement is quantified by measurement of the switching current density when the ferromagnetic layer is the free electrode in a magnetic tunnel junction. The results are explained as the suppression of spin pumping through a substantial decrease in the effective spin-mixing conductance of the interface, but without a concomitant reduction of the ferromagnet\' s absorption of the SHE generated spin current.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin torque study of the spin Hall conductivity and spin diffusion length in platinum thin films with varying resistivity

We report measurements of the spin torque efficiencies in perpendicularly-magnetized Pt/Co bilayers where the Pt resistivity $ρ_{Pt}$ is strongly dependent on thickness $t_{Pt}$ . The damping-like spin Hall torque efficiency per unit current density, $ξ^j_{DL}$ , varies significantly with $t_{Pt}$, exhibiting a peak value $ξ^j_{DL}=0.12$ at $t_{Pt} = 2.8 - 3.9$ nm. In contrast, $ξ^j_{DL}/ρ_{Pt}$ increases monotonically with $t_{Pt}$ and saturates for $t_{Pt} > 5$ nm, consistent with an intrinsic spin Hall effect mechanism, in which $ξ^j_{DL}$ is enhanced by an increase in $ρ_{Pt}$ . Assuming the Elliott-Yafet spin scattering mechanism dominates we estimate that the spin diffusion length $λ_s = (0.77 \pm 0.08) \times 10^{-15} Ωm^2 /ρ_{Pt}$.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Enhancement of Perpendicular Magnetic Anisotropy and Transmission of Spin-Hall-Effect-Induced Spin Currents by a Hf Spacer Layer in W/Hf/CoFeB/MgO Layer

We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W layer to apply strong spin torque on the CoFeB, thereby enabling current-driven magnetic switching. The antidamping-like and field-like components of the spin torque exerted on a 1 nm CoFeB layer are of comparable magnitudes in this geometry. Both components originate from the spin Hall effect in the underlying W layer.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Interlayer Diffusion of Nuclear Spin Polarization in $ν=2/3$ Quantum Hall States

At the spin transition point of $ν=2/3$ quantum Hall states, nuclear spins in a two-dimensional electron gas are polarized by an electric current. Using GaAs/AlGaAs double-quantum-well samples, we first observed the spatial diffusion of nuclear spin polarization between the two layers when the nuclear spin polarization is current-induced in one layer. By numerical simulation, we estimated the diffusion constant of the nuclear spin polarization to be $15 \pm 7$\,nm$^2$/s.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Phase Transition to Insulating State from Quantum Hall State by Current-Induced Nuclear Spin Polarization

We investigate the resistance enhancement state (RES) where the magnetoresistance of the $ν= 2/3$ fractional quantum Hall state (FQHS) is increased with dynamic nuclear spin polarization (DNP) induced by a large electric current. After inducing DNP, we measure the temperature dependence of the magnetoresistance by a small current over a short period of time. We find that the FQHS makes a phase transition to an insulating state. By measuring the Hall resistance in the insulating state, we find that the RES exhibits a quantized Hall resistance. We discuss the RES in association with the Anderson localization.

0 citations0 reviewsNo code linkedOpen access