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D. C. Ralph

D. C. Ralph appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherphysics.app-phcond-mat.str-elcond-matphysics.comp-ph

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Published work

42 published item(s)

preprint2021arXiv

Lack of simple correlation between switching current density and spin-orbit torque efficiency of perpendicularly magnetized spin-current generator/ferromagnet heterostructures

Spin-orbit torque can drive electrical switching of magnetic layers. Here, we report that at least for micrometer-sized samples there is no simple correlation between the efficiency of dampinglike spin-orbit torque (ξ_DL^j) and the critical switching current density of perpendicularly magnetized spin-current generator/ferromagnet heterostructures. We find that the values of ξ_DL^j based on switching current densities can either under- or over-estimated ξ_DL^j by up to tens of times in a domain-wall depinning analysis, while in the macrospin analysis based on the switching current density ξ_DL^j can be overestimated by up to thousands of times. When comparing the relative strengths of ξ_DL^j of spin-current generators, the critical switching current densities by themselves are a poor predictor.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Origin of Strong Two-Magnon Scattering in Heavy Metal/Ferromagnet/Oxide Heterostructures

We experimentally investigate the origin of the two-magnon scattering (TMS) in heavy-metal (HM)/ferromagnet (FM)/oxide heterostructures (FM = Co, Ni81Fe19, or Fe60Co20B20) by varying the materials located above and below the FM layers. We show that strong TMS in HM/FM/oxide systems arises primarily at the HM/FM interface and increases with the strength of interfacial spin-orbit coupling and magnetic roughness at this interface. TMS at the FM/oxide interface is relatively weak, even in systems where spin-orbit coupling at this interface generates strong interfacial magnetic anisotropy. We also suggest that the spin-current-induced excitation of non-uniform short-wavelength magnon at the HM/FM interface may function as a mechanism of spin memory loss for the spin-orbit torque exerted on the uniform mode.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75

Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a challenge. Non-volatile magnetoresistive random access memories (MRAMs) driven by spin-orbit torques (SOTs) have promise to be faster and more energy-efficient than conventional semiconductor and spin-transfer-torque magnetic memories. This work reports that the spin Hall effect of low-resistivity Au0.25Pt0.75 thin films enables ultrafast antidamping-torque switching of SOT-MRAM devices for current pulse widths as short as 200 ps. If combined with industrial-quality lithography and already-demonstrated interfacial engineering, our results show that an optimized MRAM cell based on Au0.25Pt0.75 can have energy-efficient, ultrafast, and reliable switching, e.g. a write energy of < 1 fJ (< 50 fJ) for write error rate of 50% (<1e-5) for 1 ns pulses. The antidamping torque switching of the Au0.25Pt0.75 devices is 10 times faster than expected from a rigid macrospin model, most likely because of the fast micromagnetics due to the enhanced non-uniformity within the free layer. These results demonstrate the feasibility of Au0.25Pt0.75-based SOT-MRAMs as a candidate for ultrafast, reliable, energy-efficient, low-impedance, and unlimited-endurance memory.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

MoS$_{2}$ pixel arrays for real-time photoluminescence imaging of redox molecules

Measuring the behavior of redox-active molecules in space and time is crucial for better understanding of chemical and biological systems and for the development of new technologies. Optical schemes are non-invasive, scalable and can be applied to many different systems, but usually have a slow response compared to electrical detection methods. Furthermore, many fluorescent molecules for redox detection degrade in brightness over long exposure times. Here we show that the photoluminescence of pixel arrays of an atomically thin two-dimensional (2D) material, a monolayer of MoS$_{2}$, can image spatial and temporal changes in redox molecule concentration in real time. Because of the strong dependence of MoS$_{2}$ photoluminescence on doping and sensitivity to surface changes characteristic of 2D materials, changes in the local chemical potential significantly modulate the photoluminescence of MoS$_{2}$, with a sensitivity of 0.9 mV/$\sqrt{Hz}$ on a 5 $μ$m by 5 $μ$m pixel, corresponding to better than parts-per-hundred changes in redox molecule concentration down to nanomolar concentrations at 100 ms frame rates. The real-time imaging of electrochemical potentials with a fast response time provides a new strategy for visualizing chemical reactions and biomolecules with a 2D material screen.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Comment on "Spin-Orbit Logic with Magnetoelectric Nodes: A Scalable Charge Mediated Nonvolatile Spintronic Logic" (arXiv:1512.05428)

Researchers from Intel Corporation recently proposed "Magneto-Electric Spin Orbit (MESO)" logic as a new strategy for beyond-CMOS electronics [1]. The Intel researchers project that this concept has the potential to reduce the switching energy per bit "to near thermodynamic limits for GHz logic (100 kT switching at 100 ps delay)", i.e., to near 0.4 aJ. Here I point out that the switching energy stated in ref. [1] is incorrect, because the paper neglects a large energy cost associated with Ohmic dissipation that is unavoidable within the MESO scheme. Using optimistic parameters, the true minimum switching energy per bit within the MESO approach is at least 150 fJ, or more than 300,000 times greater than the value stated in ref. [1]. Given this large energy cost, the MESO concept is not a viable strategy for beyond-CMOS logic.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Control of spin-orbit torques through crystal symmetry in WTe2/ferromagnet bilayers

Recent discoveries regarding current-induced spin-orbit torques produced by heavy-metal/ferromagnet and topological-insulator/ferromagnet bilayers provide the potential for dramatically-improved efficiency in the manipulation of magnetic devices. However, in experiments performed to date, spin-orbit torques have an important limitation -- the component of torque that can compensate magnetic damping is required by symmetry to lie within the device plane. This means that spin-orbit torques can drive the most current-efficient type of magnetic reversal (antidamping switching) only for magnetic devices with in-plane anisotropy, not the devices with perpendicular magnetic anisotropy that are needed for high-density applications. Here we show experimentally that this state of affairs is not fundamental, but rather one can change the allowed symmetries of spin-orbit torques in spin-source/ferromagnet bilayer devices by using a spin source material with low crystalline symmetry. We use WTe2, a transition-metal dichalcogenide whose surface crystal structure has only one mirror plane and no two-fold rotational invariance. Consistent with these symmetries, we generate an out-of-plane antidamping torque when current is applied along a low-symmetry axis of WTe2/Permalloy bilayers, but not when current is applied along a high-symmetry axis. Controlling S-O torques by crystal symmetries in multilayer samples provides a new strategy for optimizing future magnetic technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Low-damping sub-10-nm thin films of lutetium iron garnet grown by molecular-beam epitaxy

We analyze the structural and magnetic characteristics of (111)-oriented lutetium iron garnet (Lu$_3$Fe$_5$O$_{12}$) films grown by molecular-beam epitaxy, for films as thin as 2.8 nm. Thickness-dependent measurements of the in- and out-of-plane ferromagnetic resonance allow us to quantify the effects of two-magnon scattering, along with the surface anisotropy and the saturation magnetization. We achieve effective damping coefficients of $11.1(9) \times 10^{-4}$ for 5.3 nm films and $32(3) \times 10^{-4}$ for 2.8 nm films, among the lowest values reported to date for any insulating ferrimagnetic sample of comparable thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

On the origin of field-like spin-orbit torques in heavy metal-ferromagnet-oxide thin film heterostructures

We report measurements of the thickness and temperature (T) dependencies of current-induced spin-orbit torques, especially the field-like (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/Oxide (MgO and HfOx/MgO) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect (SHE) in the HM. For a FM layer sufficiently thin that a substantial portion of this spin current can reach the FM/Oxide interface, T-dependent spin scattering there can yield a strong FL torque that is, in some cases, opposite in sign to that exerted at the NM/FM interface.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Strong Spin Hall Effect in the Antiferromagnet PtMn

Effectively manipulating magnetism in ferromagnet (FM) thin film nanostructures with an in-plane current has become feasible since the determination of a 'giant' spin Hall effect (SHE) in certain heavy metal (HM)/FM system. Recently, both theoretical and experimental reports indicate that the non-collinear and collinear metallic antiferromagnet (AF) materials can have both a large anomalous Hall effect (AHE) and a strong SHE. Here we report a systematic study of the SHE in PtMn with several PtMn/FM systems. By using interface engineering to reduce the 'spin memory loss' we obtain a spin torque efficiency as large as 0.24. This is more than twice the previously reported spin torque efficiency for PtMn. We also find that the apparent spin diffusion length in PtMn is surprisingly long (about 2.3nm).

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

GPU-accelerated micromagnetic simulations using cloud computing

Highly-parallel graphics processing units (GPUs) can improve the speed of micromagnetic simulations significantly as compared to conventional computing using central processing units (CPUs). We present a strategy for performing GPU-accelerated micromagnetic simulations by utilizing cost-effective GPU access offered by cloud computing services with an open-source Python-based program for running the MuMax3 micromagnetics code remotely. We analyze the scaling and cost benefits of using cloud computing for micromagnetics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin torque study of the spin Hall conductivity and spin diffusion length in platinum thin films with varying resistivity

We report measurements of the spin torque efficiencies in perpendicularly-magnetized Pt/Co bilayers where the Pt resistivity $ρ_{Pt}$ is strongly dependent on thickness $t_{Pt}$ . The damping-like spin Hall torque efficiency per unit current density, $ξ^j_{DL}$ , varies significantly with $t_{Pt}$, exhibiting a peak value $ξ^j_{DL}=0.12$ at $t_{Pt} = 2.8 - 3.9$ nm. In contrast, $ξ^j_{DL}/ρ_{Pt}$ increases monotonically with $t_{Pt}$ and saturates for $t_{Pt} > 5$ nm, consistent with an intrinsic spin Hall effect mechanism, in which $ξ^j_{DL}$ is enhanced by an increase in $ρ_{Pt}$ . Assuming the Elliott-Yafet spin scattering mechanism dominates we estimate that the spin diffusion length $λ_s = (0.77 \pm 0.08) \times 10^{-15} Ωm^2 /ρ_{Pt}$.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Dependence of the Efficiency of Spin Hall Torque on the Transparency of Pt-Ferromagnetic Layer Interfaces

We report that spin current transport across Pt-ferromagnet (FM) interfaces is strongly dependent on the type and the thickness of the FM layer and on post-deposition processing protocols. By employing both harmonic voltage measurements and spin-torque ferromagnetic resonance measurements, we find that the efficiency of the Pt spin Hall effect in exerting a damping-like spin torque on the FM ranges from < 0.05 to > 0.10 under different interfacial conditions. We also show that the temperature dependence of the spin torque efficiencies for both the damping-like torque and field-like torque is dependent upon the details of the Pt-FM interface. The "internal" spin Hall angle of the Pt thin films used in this study, after taking the interfacial spin transmission factor into account, is estimated to be ~ 0.20. This suggests that a careful engineering of Pt-FM interfaces can improve the spin-Hall-torque efficiency of Pt-based spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Enhancement of Perpendicular Magnetic Anisotropy and Transmission of Spin-Hall-Effect-Induced Spin Currents by a Hf Spacer Layer in W/Hf/CoFeB/MgO Layer

We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W layer to apply strong spin torque on the CoFeB, thereby enabling current-driven magnetic switching. The antidamping-like and field-like components of the spin torque exerted on a 1 nm CoFeB layer are of comparable magnitudes in this geometry. Both components originate from the spin Hall effect in the underlying W layer.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin Transfer Torque Generated by the Topological Insulator Bi_2Se_3

Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. There has been considerable recent progress in this effort, in particular discoveries that spin-orbit interactions in heavy metal/ferromagnet bilayers can yield strong current-driven torques on the magnetic layer, via the spin Hall effect in the heavy metal or the Rashba-Edelstein effect in the ferromagnet. As part of the search for materials to provide even more efficient spin-orbit-induced torques, some proposals have suggested topological insulators (TIs), which possess a surface state in which the effects of spin-orbit coupling are maximal in the sense that an electron's spin orientation is locked relative to its propagation direction. Here we report experiments showing that charge current flowing in-plane in a thin film of the TI Bi_2Se_3 at room temperature can indeed apply a strong spin-transfer torque to an adjacent ferromagnetic permalloy (Py = Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in the Bi_2Se_3 is greater than for any other spin-torque source material measured to date, even for non-ideal TI films wherein the surface states coexist with bulk conduction. Our data suggest that TIs have potential to enable very efficient electrical manipulation of magnetic materials at room temperature for memory and logic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

A quasi-linear spin-torque nano-oscillator via enhanced negative feedback of power fluctuations

We report an approach to improving the performance of spin torque nano-oscillators (STNOs) that utilizes power-dependent negative feedback to achieve a significantly enhanced dynamic damping. In combination with a sufficiently slow variation of frequency with power this can result in a quasi-linear STNO, with very weak non-linear coupling of power and phase fluctuations over a range of bias current and field. An implementation of this approach that utilizes a non-uniform spin-torque demonstrates that highly coherent room temperature STNOs can be achieved while retaining a significant tunability.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Central role of domain wall depinning for perpendicular magnetization switching driven by spin torque from the spin Hall effect

We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nano-square driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching process is domain-wall (DW) depinning by spin Hall torque via a thermally-assisted mechanism that eventually produces full reversal by domain expansion. An in-plane applied magnetic field collinear with the current is required, with the necessary field scale set by the need to overcome DW chirality imposed by the Dzyaloshinskii-Moriya interaction. Once Joule heating is taken into account the switching current density is quantitatively consistent with a spin Hall angle θ$_{SH}$ ${\approx}$ 0.07 for 4 nm of Pt.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Observation and Spectroscopy of a Two-Electron Wigner Molecule in an Ultra-Clean Carbon Nanotube

Coulomb interactions can have a decisive effect on the ground state of electronic systems. The simplest system in which interactions can play an interesting role is that of two electrons on a string. In the presence of strong interactions the two electrons are predicted to form a Wigner molecule, separating to the ends of the string due to their mutual repulsion. This spatial structure is believed to be clearly imprinted on the energy spectrum, yet to date a direct measurement of such a spectrum in a controllable one-dimensional setting is still missing. Here we use an ultra-clean suspended carbon nanotube to realize this system in a tunable potential. Using tunneling spectroscopy we measure the excitation spectra of two interacting carriers, electrons or holes, and identify seven low-energy states characterized by their spin and isospin quantum numbers. These states fall into two multiplets according to their exchange symmetries. The formation of a strongly-interacting Wigner molecule is evident from the small energy splitting measured between the two multiplets, that is quenched by an order of magnitude compared to the non-interacting value. Our ability to tune the two-electron state in space and to study it for both electrons and holes provides an unambiguous demonstration of the fundamental Wigner molecule state.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Gate voltage modulation of spin-Hall-torque-driven magnetic switching

Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA). Spin transfer torque is in widespread development as the write mechanism for next-generation magnetic memory, while VCMA offers the potential of even better energy performance due to smaller Ohmic losses. Here we introduce a 3-terminal magnetic tunnel junction (MTJ) device that combines both of these mechanisms to achieve new functionality: gate-voltage-modulated spin torque switching. This gating makes possible both more energy-efficient switching and also improved architectures for memory and logic applications, including a simple approach for making magnetic memories with a maximum-density cross-point geometry that does not require a control transistor for every MTJ.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic oscillations driven by the spin Hall effect in 3-terminal magnetic tunnel junction devices

We show that direct current in a tantalum microstrip can induce steady-state magnetic oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE). The oscillations are detected electrically via a magnetic tunnel junction (MTJ) contacting the nanomagnet. The oscillation frequency can be controlled using the MTJ bias to tune the magnetic anisotropy. In this 3-terminal device the SHE torque and the MTJ bias therefore provide independent controls of the oscillation amplitude and frequency, enabling new approaches for developing tunable spin torque nano-oscillators.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Network analyzer measurements of spin transfer torques in magnetic tunnel junctions

We demonstrate a simple network-analyzer technique to make quantitative measurements of the bias dependence of spin torque in a magnetic tunnel junction. We apply a microwave current to exert an oscillating spin torque near the ferromagnetic resonance frequency of the tunnel junction's free layer. This produces an oscillating resistance that, together with an applied direct current, generates a microwave signal that we measure with the network analyzer. An analysis of the resonant response yields the strength and direction of the spin torque at non-zero bias. We compare to measurements of the spin torque vector by time-domain spin-torque ferromagnetic resonance.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Resonance Measurement of Nonlocal Spin Torque in a Three-Terminal Magnetic Device

A pure spin current generated within a nonlocal spin valve can exert a spin transfer torque on a nanomagnet. This nonlocal torque enables new design schemes for magnetic memory devices that do not require the application of large voltages across tunnel barriers that can suffer electrical breakdown. Here we report a quantitative measurement of this nonlocal spin torque using spin-torque-driven ferromagnetic resonance. Our measurement agrees well with the prediction of an effective circuit model for spin transport. Based on this model, we suggest strategies for optimizing the strength of nonlocal torque.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Review and Analysis of Measurements of the Spin Hall Effect in Platinum

Several different experimental techniques have been used in efforts to measure the spin Hall conductivity and the spin Hall angle in Pt samples at room temperature, with results that disagree by more than a factor of 20, with spin Hall conductivities from 2.4 x 10^4 to 5.1 x 10^5 [hbar/(2e)] (Ohm-m)^-1 and spin Hall angles from 0.0037 to 0.08. We review this work, and analyze possible reasons for the discrepancies. We explain that the smallest values for the spin Hall angle that have been reported, based on measurements of lateral permalloy/copper/platinum devices, are incorrect because the original analyses did not properly take into account that copper layers in these devices will shunt charge current flowing through adjacent platinum wires, thereby greatly reducing the size of the spin-Hall-related signals. We suggest that differences between the results for the spin Hall angle found by other experimental techniques are primarily a consequence of different assumptions about the value of the spin diffusion length in Pt. We present a new measurement of the spin diffusion length in Pt within sputtered Pt/permalloy bilayer thin films at room temperature, finding 1.4 \pm 0.3 nm, a much smaller value than has generally been assumed previously. With this value for the spin diffusion length, the previously-discordant results can be brought into much better agreement, with the result that the spin Hall conductivities are (1.4 - 3.4) x 10^5 [hbar/(2e)] (Ohm-m)^-1 and the spin Hall angles are greater than 0.05. These values are sufficiently large that the spin Hall effect in Pt can be used to generate spin currents and spin transfer torques strong enough for efficient manipulation of magnetic moments in adjacent ferromagnetic layers.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin torque switching with the giant spin Hall effect of tantalum

We report a giant spin Hall effect (SHE) in β-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. We implement a three-terminal device that utilizes current passing through a low impedance Ta-ferromagnet bilayer to effect switching of a nanomagnet, with a higher-impedance magnetic tunnel junction for read-out. The efficiency and reliability of this device, together with its simplicity of fabrication, suggest that this three-terminal SHE-ST design can eliminate the main obstacles currently impeding the development of magnetic memory and non-volatile spin logic technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin transfer torque devices utilizing the giant spin Hall effect of tungsten

We report a giant spin Hall effect (SHE) in β-W thin films. Using spin torque induced ferromagnetic resonance with a β-W/CoFeB bilayer microstrip we determine the spin Hall angle to be |θ|=0.30\pm0.02, large enough for an in-plane current to efficiently reverse the orientation of an in-plane magnetized CoFeB free layer of a nanoscale magnetic tunnel junction adjacent to a thin β-W layer. From switching data obtained with such 3-terminal devices we independently determine |θ|=0.33\pm0.06. We also report variation of the spin Hall switching efficiency with W layers of different resistivities and hence of variable (α and β) phase composition.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Magnetic switching by spin torque from the spin Hall effect

The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and modeling, that in a Pt/Co bilayer with perpendicular magnetic anisotropy the SHE can produce a spin transfer torque that is strong enough to efficiently rotate and reversibly switch the Co magnetization, thereby providing a new strategy both to understand the SHE and to manipulate magnets. We suggest that the SHE torque can have a similarly strong influence on current-driven magnetic domain wall motion in Pt/ferromagnet multilayers. We estimate that in optimized devices the SHE torque can switch magnetic moments using currents comparable to those in magnetic tunnel junctions operated by conventional spin-torque switching, meaning that the SHE can enable magnetic memory and logic devices with similar performance but simpler architecture than the current state of the art.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Mechanical Control of Spin States in Spin-1 Molecules and the Underscreened Kondo Effect

The ability to make electrical contact to single molecules creates opportunities to examine fundamental processes governing electron flow on the smallest possible length scales. We report experiments in which we controllably stretch individual cobalt complexes having spin S = 1, while simultaneously measuring current flow through the molecule. The molecule's spin states and magnetic anisotropy were manipulated in the absence of a magnetic field by modification of the molecular symmetry. This control enabled quantitative studies of the underscreened Kondo effect, in which conduction electrons only partially compensate the molecular spin. Our findings demonstrate a mechanism of spin control in single-molecule devices and establish that they can serve as model systems for making precision tests of correlated-electron theories.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin Torque Ferromagnetic Resonance Induced by the Spin Hall Effect

We demonstrate that the spin Hall effect in a thin film with strong spin-orbit scattering can excite magnetic precession in an adjacent ferromagnetic film. The flow of alternating current through a Pt/NiFe bilayer generates an oscillating transverse spin current in the Pt, and the resultant transfer of spin angular momentum to the NiFe induces ferromagnetic resonance (FMR) dynamics. The Oersted field from the current also generates an FMR signal but with a different symmetry. The ratio of these two signals allows a quantitative determination of the spin current and the spin Hall angle.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Bias and angular dependence of spin-transfer torque in magnetic tunnel junctions

We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector T in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a function of bias, V. We explain the conflicting conclusions of two previous experiments by accounting for additional terms that contribute to the ST-FMR signal at large |V|. Including the additional terms gives us improved precision in the determination of T(V), allowing us to distinguish among competing predictions. We determine that the in-plane component of has a weak but non-zero dependence on bias, varying by 30-35% over the bias range where the measurements are accurate, and that the perpendicular component can be large enough to be technologically significant. We also make comparisons to other experimental techniques that have been used to try to measure T(V).

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Sensitivity of spin-torque diodes for frequency-tunable resonant microwave detection

We calculate the efficiency with which magnetic tunnel junctions can be used as resonant detectors of incident microwave radiation via the spin-torque diode effect. The expression we derive is in good agreement with the sensitivities we measure for MgO-based magnetic tunnel junctions with an extended (unpatterned) magnetic pinned layer. However, the measured sensitivities are reduced below our estimate for a second set of devices in which the pinned layer is a patterned synthetic antiferromagnet (SAF). We suggest that this reduction may be due to an undesirable coupling between the magnetic free layer and one of the magnetic layers within the etched SAF. Our calculations suggest that optimized tunnel junctions should achieve sensitivities for resonant detection exceeding 10,000 mV/mW.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Single-shot time-domain studies of spin-torque-driven switching in magnetic tunnel junctions

We report single-shot measurements of resistance versus time for thermally assisted spin-torque-driven switching in magnetic tunnel junctions. We achieve sufficient sensitivity to resolve the resistance signals leading up to switching, including the variations between individual switching events. Analyses of pre-switching thermal fluctuations allow detailed measurements of coherence times and variations in magnetization precession amplitude. We find that with a small in-plane hard-axis magnetic field the magnetization dynamics are more spatially coherent than for the case of zero field.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Ultrafast switching of a nanomagnet by a combined out-of-plane and in-plane polarized spin-current pulse

We report on spin valve devices that incorporate both an out-of-plane polarizer (OPP) to quickly excite spin torque (ST) switching and an in-plane polarizer/analyzer (IPP). For pulses < 200 ps we observe reliable precessional switching due largely to ST from the OPP. Compared to a conventional spin valve, for a given current in the short pulse regime the addition of the OPP can decrease the pulse width necessary for switching by a factor of 10 or more. The influence of the IPP is most obvious at longer, smaller pulses, but also has beneficial ST consequences for short pulse switching.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Magnetic vortex oscillator driven by dc spin-polarized current

Transfer of angular momentum from a spin-polarized current to a ferromagnet provides an efficient means to control the dynamics of nanomagnets. A peculiar consequence of this spin-torque, the ability to induce persistent oscillations of a nanomagnet by applying a dc current, has previously been reported only for spatially uniform nanomagnets. Here we demonstrate that a quintessentially nonuniform magnetic structure, a magnetic vortex, isolated within a nanoscale spin valve structure, can be excited into persistent microwave-frequency oscillations by a spin-polarized dc current. Comparison to micromagnetic simulations leads to identification of the oscillations with a precession of the vortex core. The oscillations, which can be obtained in essentially zero magnetic field, exhibit linewidths that can be narrower than 300 kHz, making these highly compact spin-torque vortex oscillator devices potential candidates for microwave signal-processing applications, and a powerful new tool for fundamental studies of vortex dynamics in magnetic nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions

Spin-polarized currents can transfer spin angular momentum to a ferromagnet, generating a torque that can efficiently reorient its magnetization. Achieving quantitative measurements of the spin-transfer-torque vector in magnetic tunnel junctions (MTJs) is important for understanding fundamental mechanisms affecting spin-dependent tunneling, and for developing magnetic memories and nanoscale microwave oscillators. Here we present direct measurements of both the magnitude and direction of the spin torque in Co60Fe20B20/MgO/Co60Fe20B20 MTJs. At low bias V, the differential torque vector d{tau}/dV lies in the plane defined by the electrode magnetizations, and its magnitude is in excellent agreement with a prediction for highly-spin-polarized tunneling. With increasing bias, the in-plane component d{tau}_{parallel}/dV remains large, in striking contrast to the decreasing magnetoresistance ratio. The differential torque vector also rotates out of the plane under bias; we measure a perpendicular component tau_{perp}(V) with bias dependence proportional to V^2 for low V, that becomes as large as 30% of the in-plane torque.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Anisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in ferromagnetic metal break junctions

We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle, in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Phonons in Molecular Quantum Dots: Density Functional Calculation of Franck-Condon Emission Rates in External Fields

We report the calculation of various phonon overlaps and their corresponding phonon emission probabilities for the problem of an electron tunneling onto and off of the buckyball-dimer molecular quantum dot $C_{72}$, both with and without the influence of an external field. We show that the stretch mode of the two balls of the dumbbell couples most strongly to the electronic transition, and in turn that a field in the direction of the bond between the two $C_{36}$ balls is most effective at further increasing the phonon emission into the stretch mode. As the field is increased, phonon emission increases in probability with an accompanying decrease in probability of the dot remaining in the ground vibrational state. We also present a simple model to gauge the effect of molecular size on the phonon emission of molecules similar to our $C_{72}$ molecule, including the experimentally tested $C_{140}$. In our approach we do not assume that the hessians of the molecule are identical for different charge states. Our treatment is hence a generalization of the traditional phonon overlap calculations for coupled electron-photon transition in solids.

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preprint2006arXiv

Signatures of Molecular Magnetism in Single-Molecule Transport Spectroscopy

Single-molecule transistors provide a unique experimental tool to investigate the coupling between charge transport and the molecular degrees of freedom in individual molecules. One interesting class of molecules for such experiments are the single-molecule magnets, since the intramolecular exchange forces present in these molecules should couple strongly to the spin of transport electrons, thereby providing both new mechanisms for modulating electron flow and also new means for probing nanoscale magnetic excitations. Here we report single-molecule transistor measurements on devices incorporating Mn12 molecules. By studying the electron-tunneling spectrum as a function of magnetic field, we are able to identify clear signatures of magnetic states and their associated magnetic anisotropy. A comparison of the data to simulations also suggests that electron flow can strongly enhance magnetic relaxation of the magnetic molecule.

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preprint2005arXiv

From ballistic transport to tunneling in electromigrated ferromagnetic breakjunctions

We fabricate ferromagnetic nanowires with constrictions whose cross section can be reduced gradually from 100 nm to the atomic scale and eventually to the tunneling regime by means of electromigration. These devices are mechanically stable against magnetostriction and magnetostatic effects. We measure magnetoresistances ~ 0.3% for 100*30 nm^2 constrictions, increasing to a maximum of 80% for atomic-scale widths. These results are consistent with a geometrically-constrained domain wall trapped at the constriction. For the devices in the tunneling regime we observe large fluctuations in MR, between -10 and 85%.

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preprint2004arXiv

Mechanically-adjustable and electrically-gated single-molecule transistors

We demonstrate a device geometry for single-molecule electronics experiments that combines both the ability to adjust the spacing between the electrodes mechanically and the ability to shift the energy levels in the molecule using a gate electrode. With the independent in-situ variations of molecular properties provided by these two experimental "knobs", we are able to achieve a much more detailed characterization of electron transport through the molecule than is possible with either technique separately. We illustrate the devices' performance using C60 molecules.

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preprint2004arXiv

Spin-dependent transport in molecular tunnel junctions

We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni/octanethiol/Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the angle between the magnetic moments in the two electrodes is varied, demonstrating that low-energy electrons can traverse the molecular barrier while maintaining spin coherence. An analysis of the voltage and temperature dependence of the data suggests that the spin-coherent transport signals can be degraded by localized states in the molecular barriers.

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preprint2002arXiv

Measurements of strongly-anisotropic g-factors for spins in single quantum states

We have measured the full angular dependence, as a function of the direction of magnetic field, for the Zeeman splitting of individual energy states in copper nanoparticles. The g-factors for spin splitting are highly anisotropic, with angular variations as large as a factor of five. The angular dependence fits well to ellipsoids. Both the principal-axis directions and g-factor magnitudes vary between different energy levels within one nanoparticle. The variations agree quantitatively with random-matrix theory predictions which incorporate spin-orbit coupling.

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preprint2001arXiv

Studies of spin-orbit scattering in noble-metal nanoparticles using energy level tunneling spectroscopy

The effects of spin-orbit scattering on discrete electronic energy levels are studied in copper, silver, and gold nanoparticles. Level-to-level fluctuations of the effective $g$-factor for Zeeman splitting are characterized, and the statistics are found to be well-described by random matrix theory predictions. The strength of spin-orbit scattering increases with atomic number and also varies between nanoparticles made of the same metal. The spin-orbit scattering rates in the nanoparticles are in order-of-magnitude agreement with bulk measurements on disordered samples.

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preprint1998arXiv

The 2-Channel Kondo Model I: Review of Experimental Evidence for its Realization in Metal Nanoconstrictions

Certain zero-bias anomalies (ZBAs) in the voltage, temperature and magnetic field dependence of the conductance $G(V,T,H)$ of quenched Cu point contacts have previously been interpreted to be due to non-magnetic 2-channel Kondo (2CK) scattering from near-degenerate atomic two-level tunneling systems (Ralph and Buhrman, 1992; Ralph et al. 1994), and hence to represent an experimental realization of the non-Fermi-liquid physics of the T=0 fixed point of the 2-channel Kondo model. In this, the first in a series of three papers (I,II,III) devoted to 2-channel Kondo physics, we present a comprehensive review of the quenched Cu ZBA experiments and their 2CK interpretation, including new results on ZBAs in constrictions made from Ti or from metallic glasses. We first review the evidence that the ZBAs are due to electron scattering from stuctural defects that are not static, but possess internal dynamics. In order to distinguish between several mechanisms proposed to explain the experiments, we then analyze the scaling properties of the conductance at low temperature and voltage and extract from the data a universal scaling function $Γ(v)$. The theoretical calculation of the corresponding scaling function within the 2CK model is the subject of papers II and III. The main conclusion of our work is that the properties of the ZBAs, and most notably their scaling behavior, are in good agreement with the 2CK model and clearly different from several other proposed mechanisms.

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