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D. C. Ralph

D. C. Ralph contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2021arXiv

Lack of simple correlation between switching current density and spin-orbit torque efficiency of perpendicularly magnetized spin-current generator/ferromagnet heterostructures

Spin-orbit torque can drive electrical switching of magnetic layers. Here, we report that at least for micrometer-sized samples there is no simple correlation between the efficiency of dampinglike spin-orbit torque (ξ_DL^j) and the critical switching current density of perpendicularly magnetized spin-current generator/ferromagnet heterostructures. We find that the values of ξ_DL^j based on switching current densities can either under- or over-estimated ξ_DL^j by up to tens of times in a domain-wall depinning analysis, while in the macrospin analysis based on the switching current density ξ_DL^j can be overestimated by up to thousands of times. When comparing the relative strengths of ξ_DL^j of spin-current generators, the critical switching current densities by themselves are a poor predictor.

preprint2020arXiv

Origin of Strong Two-Magnon Scattering in Heavy Metal/Ferromagnet/Oxide Heterostructures

We experimentally investigate the origin of the two-magnon scattering (TMS) in heavy-metal (HM)/ferromagnet (FM)/oxide heterostructures (FM = Co, Ni81Fe19, or Fe60Co20B20) by varying the materials located above and below the FM layers. We show that strong TMS in HM/FM/oxide systems arises primarily at the HM/FM interface and increases with the strength of interfacial spin-orbit coupling and magnetic roughness at this interface. TMS at the FM/oxide interface is relatively weak, even in systems where spin-orbit coupling at this interface generates strong interfacial magnetic anisotropy. We also suggest that the spin-current-induced excitation of non-uniform short-wavelength magnon at the HM/FM interface may function as a mechanism of spin memory loss for the spin-orbit torque exerted on the uniform mode.

preprint2019arXiv

Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75

Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a challenge. Non-volatile magnetoresistive random access memories (MRAMs) driven by spin-orbit torques (SOTs) have promise to be faster and more energy-efficient than conventional semiconductor and spin-transfer-torque magnetic memories. This work reports that the spin Hall effect of low-resistivity Au0.25Pt0.75 thin films enables ultrafast antidamping-torque switching of SOT-MRAM devices for current pulse widths as short as 200 ps. If combined with industrial-quality lithography and already-demonstrated interfacial engineering, our results show that an optimized MRAM cell based on Au0.25Pt0.75 can have energy-efficient, ultrafast, and reliable switching, e.g. a write energy of < 1 fJ (< 50 fJ) for write error rate of 50% (<1e-5) for 1 ns pulses. The antidamping torque switching of the Au0.25Pt0.75 devices is 10 times faster than expected from a rigid macrospin model, most likely because of the fast micromagnetics due to the enhanced non-uniformity within the free layer. These results demonstrate the feasibility of Au0.25Pt0.75-based SOT-MRAMs as a candidate for ultrafast, reliable, energy-efficient, low-impedance, and unlimited-endurance memory.

preprint2019arXiv

MoS$_{2}$ pixel arrays for real-time photoluminescence imaging of redox molecules

Measuring the behavior of redox-active molecules in space and time is crucial for better understanding of chemical and biological systems and for the development of new technologies. Optical schemes are non-invasive, scalable and can be applied to many different systems, but usually have a slow response compared to electrical detection methods. Furthermore, many fluorescent molecules for redox detection degrade in brightness over long exposure times. Here we show that the photoluminescence of pixel arrays of an atomically thin two-dimensional (2D) material, a monolayer of MoS$_{2}$, can image spatial and temporal changes in redox molecule concentration in real time. Because of the strong dependence of MoS$_{2}$ photoluminescence on doping and sensitivity to surface changes characteristic of 2D materials, changes in the local chemical potential significantly modulate the photoluminescence of MoS$_{2}$, with a sensitivity of 0.9 mV/$\sqrt{Hz}$ on a 5 $μ$m by 5 $μ$m pixel, corresponding to better than parts-per-hundred changes in redox molecule concentration down to nanomolar concentrations at 100 ms frame rates. The real-time imaging of electrochemical potentials with a fast response time provides a new strategy for visualizing chemical reactions and biomolecules with a 2D material screen.

preprint2012arXiv

Review and Analysis of Measurements of the Spin Hall Effect in Platinum

Several different experimental techniques have been used in efforts to measure the spin Hall conductivity and the spin Hall angle in Pt samples at room temperature, with results that disagree by more than a factor of 20, with spin Hall conductivities from 2.4 x 10^4 to 5.1 x 10^5 [hbar/(2e)] (Ohm-m)^-1 and spin Hall angles from 0.0037 to 0.08. We review this work, and analyze possible reasons for the discrepancies. We explain that the smallest values for the spin Hall angle that have been reported, based on measurements of lateral permalloy/copper/platinum devices, are incorrect because the original analyses did not properly take into account that copper layers in these devices will shunt charge current flowing through adjacent platinum wires, thereby greatly reducing the size of the spin-Hall-related signals. We suggest that differences between the results for the spin Hall angle found by other experimental techniques are primarily a consequence of different assumptions about the value of the spin diffusion length in Pt. We present a new measurement of the spin diffusion length in Pt within sputtered Pt/permalloy bilayer thin films at room temperature, finding 1.4 \pm 0.3 nm, a much smaller value than has generally been assumed previously. With this value for the spin diffusion length, the previously-discordant results can be brought into much better agreement, with the result that the spin Hall conductivities are (1.4 - 3.4) x 10^5 [hbar/(2e)] (Ohm-m)^-1 and the spin Hall angles are greater than 0.05. These values are sufficiently large that the spin Hall effect in Pt can be used to generate spin currents and spin transfer torques strong enough for efficient manipulation of magnetic moments in adjacent ferromagnetic layers.

preprint2010arXiv

Mechanical Control of Spin States in Spin-1 Molecules and the Underscreened Kondo Effect

The ability to make electrical contact to single molecules creates opportunities to examine fundamental processes governing electron flow on the smallest possible length scales. We report experiments in which we controllably stretch individual cobalt complexes having spin S = 1, while simultaneously measuring current flow through the molecule. The molecule&#39;s spin states and magnetic anisotropy were manipulated in the absence of a magnetic field by modification of the molecular symmetry. This control enabled quantitative studies of the underscreened Kondo effect, in which conduction electrons only partially compensate the molecular spin. Our findings demonstrate a mechanism of spin control in single-molecule devices and establish that they can serve as model systems for making precision tests of correlated-electron theories.

preprint2004arXiv

Spin-dependent transport in molecular tunnel junctions

We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni/octanethiol/Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the angle between the magnetic moments in the two electrodes is varied, demonstrating that low-energy electrons can traverse the molecular barrier while maintaining spin coherence. An analysis of the voltage and temperature dependence of the data suggests that the spin-coherent transport signals can be degraded by localized states in the molecular barriers.

preprint2002arXiv

Measurements of strongly-anisotropic g-factors for spins in single quantum states

We have measured the full angular dependence, as a function of the direction of magnetic field, for the Zeeman splitting of individual energy states in copper nanoparticles. The g-factors for spin splitting are highly anisotropic, with angular variations as large as a factor of five. The angular dependence fits well to ellipsoids. Both the principal-axis directions and g-factor magnitudes vary between different energy levels within one nanoparticle. The variations agree quantitatively with random-matrix theory predictions which incorporate spin-orbit coupling.