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Source author record

Chi-Feng Pai

Chi-Feng Pai appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

15 published item(s)

preprint2022arXiv

Tailoring neuromorphic switching by CuNx-mediated orbital currents

Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the spin-orbit coupling (SOC)-induced spin Hall effect (SHE) and/or the spin Rashba-Edelstein effect (SREE). Recently, SOC-free mechanisms such as the orbital angular momentum (OAM)-induced orbital Hall effect (OHE) and/or the orbital Rashba-Edelstein effect (OREE) have been proposed to generate sizable torques comparable to those from the conventional spin Hall mechanism. In this work, we show that the orbital current can be effectively generated by the nitrided light metal Cu. The overall damping-like SOT efficiency, which consists of both the spin and the orbital current contributions, can be tailored from ~ 0.06 to 0.4 in a Pt/Co/CuNx magnetic heterostructure by tuning the nitrogen doping concentration. Current-induced magnetization switching further verifies the efficacy of such orbital current with a critical switching current density as low as Jc ~ 5 x 10^10 A/m2. Most importantly, the orbital-current-mediated memristive switching behavior can be observed in such heterostructures, which reveals that the gigantic SOT and efficient magnetization switching are the tradeoffs for the applicable window of memristive switching. Our work provides insights into the role of orbital current might play in SOT neuromorphic devices and paves a new route for making energy-efficient spin-orbitronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Toward 100% Spin-Orbit Torque Efficiency with High Spin-Orbital Hall Conductivity Pt-Cr Alloys

5d transition metal Pt is the canonical spin Hall material for efficient generation of spin-orbit torques (SOTs) in Pt/ferromagnetic layer (FM) heterostructures. However, for a long while with tremendous engineering endeavors, the damping-like SOT efficiencies ($ξ_{DL}$) of Pt and Pt alloys have still been limited to $ξ_{DL}$<0.5. Here we present that with proper alloying elements, particularly 3d transition metals V and Cr, a high spin-orbital Hall conductivity ($σ_{SH}{\sim}6.5{\times}10^{5}({\hbar}/2e)Ω^{-1}{\cdot} m^{-1}$) can be developed. Especially for the Cr-doped case, an extremely high $ξ_{DL}{\sim}0.9$ in a Pt$_{0.69}$Cr$_{0.31}$/Co device can be achieved with a moderate Pt$_{0.69}$Cr$_{0.31}$ resistivity of $ρ_{xx}{\sim}133 μΩ{\cdot}cm$. A low critical SOT-driven switching current density of $J_{c}{\sim}3.2{\times}10^{6} A{\cdot}cm^{-2}$ is also demonstrated. The damping constant ($α$) of Pt$_{0.69}$Cr$_{0.31}$/FM structure is also found to be reduced to 0.052 from the pure Pt/FM case of 0.078. The overall high $σ_{SH}$, giant $ξ_{DL}$, moderate $ρ_{xx}$, and reduced $α$ of such a Pt-Cr/FM heterostructure makes it promising for versatile extremely low power consumption SOT memory applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Benchmarking of spin-orbit torque switching efficiency in Pt alloys

We systematically survey on Pt$_{x}$Cu$_{1-x}$/Co/MgO magnetic heterostructure with perpendicular magnetic anisotropy and report a significant improvement on spin-orbit torque switching efficiency in Pt-Cu alloy system. The largest damping-like spin-orbit torque efficiency determined by hysteresis loop shift measurement is about 0.44 for Pt$_{0.57}$Cu$_{0.43}$, which is originated from the higher resistivity tuned by alloying. Moreover, from the results of current-induced switching measurements, a lower critical switching current density is achieved by proper alloying due to the simultaneous enhancement of spin-orbit torque efficiency and reduction of coercivity of the Co layer. Finally, the ability to lower power consumption and preserve good thermal stability using Pt$_{x}$Cu$_{1-x}$ alloy is demonstrated, which suggests that Pt$_{x}$Cu$_{1-x}$ is an attractive candidate for future SOT-MRAM applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Determination of spin-orbit torque efficiencies in heterostructures with in-plane magnetic anisotropy

It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the ferromagnetic layer has in-plane magnetic anisotropy, probing such switching phenomenon typically relies on tunneling magnetoresistance measurement of nano-sized magnetic tunnel junctions, differential planar Hall voltage measurement, or Kerr imaging approaches. We show that in magnetic heterostructures with spin Hall metals, there exist current-induced in-plane spin Hall effective fields and unidirectional magnetoresistance that will modify their anisotropic magnetoresistance behavior. We also demonstrate that by analyzing the response of anisotropic magnetoresistance under such influences, one can directly and electrically probe magnetization switching driven by the spin-orbit torque, even in micron-sized devices. This pump-probe method allows for efficient and direct determination of key parameters from spin-orbit torque switching events without lengthy device fabrication processes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures

The spin-orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in the next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the existence of topologically-protected surface state (TSS), which limits the feasibility of using these materials in industry. In this work, we show that non-epitaxial Bi$_{x}$Te$_{1-x}$/ferromagnet heterostructures prepared by conventional magnetron sputtering possess giant SOT efficiencies even without TSS. Through harmonic voltage measurement and hysteresis loop shift measurement, we find that the damping-like SOT efficiencies originated from the bulk spin-orbit interactions of such non-epitaxial heterostructures can reach values greater than 100% at room temperature. We further demonstrate current-induced SOT switching in these Bi$_{x}$Te$_{1-x}$-based heterostructures with thermally stable ferromagnetic layers, which indicates that such non-epitaxial chalcogenide materials can be potential efficient SOT sources in future SOT magnetic memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Current Control of Magnetic Anisotropy via Stress in a Ferromagnetic Metal Waveguide

We demonstrate that in-plane charge current can effectively control the spin precession resonance in an Al2O3/CoFeB/Ta heterostructure. Brillouin Light Scattering (BLS) was used to detect the ferromagnetic resonance field under microwave excitation of spin waves at fixed frequencies. The current control of spin precession resonance originates from modification of the in-plane uniaxial magnetic anisotropy field H_k, which changes symmetrically with respect to the current direction. Numerical simulation suggests that the anisotropic stress introduced by Joule heating plays an important role in controlling H_k. These results provide new insights into current manipulation of magnetic properties and have broad implications for spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

On the origin of field-like spin-orbit torques in heavy metal-ferromagnet-oxide thin film heterostructures

We report measurements of the thickness and temperature (T) dependencies of current-induced spin-orbit torques, especially the field-like (FL) component, in various heavy metal (HM)/normal metal (NM) spacer/ferromagnet (FM)/Oxide (MgO and HfOx/MgO) heterostructures. The FL torque in these samples originates from spin current generated by the spin Hall effect (SHE) in the HM. For a FM layer sufficiently thin that a substantial portion of this spin current can reach the FM/Oxide interface, T-dependent spin scattering there can yield a strong FL torque that is, in some cases, opposite in sign to that exerted at the NM/FM interface.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Enhancement of the Anti-Damping Spin Torque Efficacy of Platinum by Interface Modification

We report a strong enhancement of the efficacy of the spin Hall effect (SHE) of Pt for exerting anti-damping spin torque on an adjacent ferromagnetic layer by the insertion of $\approx$ 0.5 nm layer of Hf between a Pt film and a thin, < 2 nm, Fe$_{60}$Co$_{20}$B$_{20}$ ferromagnetic layer. This enhancement is quantified by measurement of the switching current density when the ferromagnetic layer is the free electrode in a magnetic tunnel junction. The results are explained as the suppression of spin pumping through a substantial decrease in the effective spin-mixing conductance of the interface, but without a concomitant reduction of the ferromagnet\' s absorption of the SHE generated spin current.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Control of Propagating Spin Waves via Spin Transfer Torque in a Metallic Bilayer Waveguide

We investigate the effect of a direct current on propagating spin waves in a CoFeB/Ta bilayer structure. Using the micro-Brillouin light scattering technique, we observe that the spin wave amplitude may be attenuated or amplified depending on the direction of the current and the applied magnetic field. Our work suggests an effective approach for electrically controlling the propagation of spin waves in a magnetic waveguide and may be useful in a number of applications such as phase locked nano-oscillators and hybrid information processing devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Dependence of the Efficiency of Spin Hall Torque on the Transparency of Pt-Ferromagnetic Layer Interfaces

We report that spin current transport across Pt-ferromagnet (FM) interfaces is strongly dependent on the type and the thickness of the FM layer and on post-deposition processing protocols. By employing both harmonic voltage measurements and spin-torque ferromagnetic resonance measurements, we find that the efficiency of the Pt spin Hall effect in exerting a damping-like spin torque on the FM ranges from < 0.05 to > 0.10 under different interfacial conditions. We also show that the temperature dependence of the spin torque efficiencies for both the damping-like torque and field-like torque is dependent upon the details of the Pt-FM interface. The "internal" spin Hall angle of the Pt thin films used in this study, after taking the interfacial spin transmission factor into account, is estimated to be ~ 0.20. This suggests that a careful engineering of Pt-FM interfaces can improve the spin-Hall-torque efficiency of Pt-based spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Enhancement of Perpendicular Magnetic Anisotropy and Transmission of Spin-Hall-Effect-Induced Spin Currents by a Hf Spacer Layer in W/Hf/CoFeB/MgO Layer

We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W layer to apply strong spin torque on the CoFeB, thereby enabling current-driven magnetic switching. The antidamping-like and field-like components of the spin torque exerted on a 1 nm CoFeB layer are of comparable magnitudes in this geometry. Both components originate from the spin Hall effect in the underlying W layer.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Gate voltage modulation of spin-Hall-torque-driven magnetic switching

Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA). Spin transfer torque is in widespread development as the write mechanism for next-generation magnetic memory, while VCMA offers the potential of even better energy performance due to smaller Ohmic losses. Here we introduce a 3-terminal magnetic tunnel junction (MTJ) device that combines both of these mechanisms to achieve new functionality: gate-voltage-modulated spin torque switching. This gating makes possible both more energy-efficient switching and also improved architectures for memory and logic applications, including a simple approach for making magnetic memories with a maximum-density cross-point geometry that does not require a control transistor for every MTJ.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic oscillations driven by the spin Hall effect in 3-terminal magnetic tunnel junction devices

We show that direct current in a tantalum microstrip can induce steady-state magnetic oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE). The oscillations are detected electrically via a magnetic tunnel junction (MTJ) contacting the nanomagnet. The oscillation frequency can be controlled using the MTJ bias to tune the magnetic anisotropy. In this 3-terminal device the SHE torque and the MTJ bias therefore provide independent controls of the oscillation amplitude and frequency, enabling new approaches for developing tunable spin torque nano-oscillators.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin torque switching with the giant spin Hall effect of tantalum

We report a giant spin Hall effect (SHE) in β-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. We implement a three-terminal device that utilizes current passing through a low impedance Ta-ferromagnet bilayer to effect switching of a nanomagnet, with a higher-impedance magnetic tunnel junction for read-out. The efficiency and reliability of this device, together with its simplicity of fabrication, suggest that this three-terminal SHE-ST design can eliminate the main obstacles currently impeding the development of magnetic memory and non-volatile spin logic technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin transfer torque devices utilizing the giant spin Hall effect of tungsten

We report a giant spin Hall effect (SHE) in β-W thin films. Using spin torque induced ferromagnetic resonance with a β-W/CoFeB bilayer microstrip we determine the spin Hall angle to be |θ|=0.30\pm0.02, large enough for an in-plane current to efficiently reverse the orientation of an in-plane magnetized CoFeB free layer of a nanoscale magnetic tunnel junction adjacent to a thin β-W layer. From switching data obtained with such 3-terminal devices we independently determine |θ|=0.33\pm0.06. We also report variation of the spin Hall switching efficiency with W layers of different resistivities and hence of variable (α and β) phase composition.

0 citations0 reviewsNo code linkedOpen access