BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Chi-Feng Pai

Chi-Feng Pai contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

Trust snapshot

Quick read

Trust 19 - UnverifiedVerification L1Unclaimed author
5works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

5 published item(s)

preprint2022arXiv

Tailoring neuromorphic switching by CuNx-mediated orbital currents

Current-induced spin-orbit torque (SOT) is regarded as a promising mechanism for driving neuromorphic behavior in spin-orbitronic devices. In principle, the strong SOT in heavy metal-based magnetic heterostructure is attributed to the spin-orbit coupling (SOC)-induced spin Hall effect (SHE) and/or the spin Rashba-Edelstein effect (SREE). Recently, SOC-free mechanisms such as the orbital angular momentum (OAM)-induced orbital Hall effect (OHE) and/or the orbital Rashba-Edelstein effect (OREE) have been proposed to generate sizable torques comparable to those from the conventional spin Hall mechanism. In this work, we show that the orbital current can be effectively generated by the nitrided light metal Cu. The overall damping-like SOT efficiency, which consists of both the spin and the orbital current contributions, can be tailored from ~ 0.06 to 0.4 in a Pt/Co/CuNx magnetic heterostructure by tuning the nitrogen doping concentration. Current-induced magnetization switching further verifies the efficacy of such orbital current with a critical switching current density as low as Jc ~ 5 x 10^10 A/m2. Most importantly, the orbital-current-mediated memristive switching behavior can be observed in such heterostructures, which reveals that the gigantic SOT and efficient magnetization switching are the tradeoffs for the applicable window of memristive switching. Our work provides insights into the role of orbital current might play in SOT neuromorphic devices and paves a new route for making energy-efficient spin-orbitronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Toward 100% Spin-Orbit Torque Efficiency with High Spin-Orbital Hall Conductivity Pt-Cr Alloys

5d transition metal Pt is the canonical spin Hall material for efficient generation of spin-orbit torques (SOTs) in Pt/ferromagnetic layer (FM) heterostructures. However, for a long while with tremendous engineering endeavors, the damping-like SOT efficiencies ($ξ_{DL}$) of Pt and Pt alloys have still been limited to $ξ_{DL}$<0.5. Here we present that with proper alloying elements, particularly 3d transition metals V and Cr, a high spin-orbital Hall conductivity ($σ_{SH}{\sim}6.5{\times}10^{5}({\hbar}/2e)Ω^{-1}{\cdot} m^{-1}$) can be developed. Especially for the Cr-doped case, an extremely high $ξ_{DL}{\sim}0.9$ in a Pt$_{0.69}$Cr$_{0.31}$/Co device can be achieved with a moderate Pt$_{0.69}$Cr$_{0.31}$ resistivity of $ρ_{xx}{\sim}133 μΩ{\cdot}cm$. A low critical SOT-driven switching current density of $J_{c}{\sim}3.2{\times}10^{6} A{\cdot}cm^{-2}$ is also demonstrated. The damping constant ($α$) of Pt$_{0.69}$Cr$_{0.31}$/FM structure is also found to be reduced to 0.052 from the pure Pt/FM case of 0.078. The overall high $σ_{SH}$, giant $ξ_{DL}$, moderate $ρ_{xx}$, and reduced $α$ of such a Pt-Cr/FM heterostructure makes it promising for versatile extremely low power consumption SOT memory applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Benchmarking of spin-orbit torque switching efficiency in Pt alloys

We systematically survey on Pt$_{x}$Cu$_{1-x}$/Co/MgO magnetic heterostructure with perpendicular magnetic anisotropy and report a significant improvement on spin-orbit torque switching efficiency in Pt-Cu alloy system. The largest damping-like spin-orbit torque efficiency determined by hysteresis loop shift measurement is about 0.44 for Pt$_{0.57}$Cu$_{0.43}$, which is originated from the higher resistivity tuned by alloying. Moreover, from the results of current-induced switching measurements, a lower critical switching current density is achieved by proper alloying due to the simultaneous enhancement of spin-orbit torque efficiency and reduction of coercivity of the Co layer. Finally, the ability to lower power consumption and preserve good thermal stability using Pt$_{x}$Cu$_{1-x}$ alloy is demonstrated, which suggests that Pt$_{x}$Cu$_{1-x}$ is an attractive candidate for future SOT-MRAM applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Determination of spin-orbit torque efficiencies in heterostructures with in-plane magnetic anisotropy

It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the ferromagnetic layer has in-plane magnetic anisotropy, probing such switching phenomenon typically relies on tunneling magnetoresistance measurement of nano-sized magnetic tunnel junctions, differential planar Hall voltage measurement, or Kerr imaging approaches. We show that in magnetic heterostructures with spin Hall metals, there exist current-induced in-plane spin Hall effective fields and unidirectional magnetoresistance that will modify their anisotropic magnetoresistance behavior. We also demonstrate that by analyzing the response of anisotropic magnetoresistance under such influences, one can directly and electrically probe magnetization switching driven by the spin-orbit torque, even in micron-sized devices. This pump-probe method allows for efficient and direct determination of key parameters from spin-orbit torque switching events without lengthy device fabrication processes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Efficient Spin-Orbit Torque Switching with Non-Epitaxial Chalcogenide Heterostructures

The spin-orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in the next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the existence of topologically-protected surface state (TSS), which limits the feasibility of using these materials in industry. In this work, we show that non-epitaxial Bi$_{x}$Te$_{1-x}$/ferromagnet heterostructures prepared by conventional magnetron sputtering possess giant SOT efficiencies even without TSS. Through harmonic voltage measurement and hysteresis loop shift measurement, we find that the damping-like SOT efficiencies originated from the bulk spin-orbit interactions of such non-epitaxial heterostructures can reach values greater than 100% at room temperature. We further demonstrate current-induced SOT switching in these Bi$_{x}$Te$_{1-x}$-based heterostructures with thermally stable ferromagnetic layers, which indicates that such non-epitaxial chalcogenide materials can be potential efficient SOT sources in future SOT magnetic memory devices.

0 citations0 reviewsNo code linkedOpen access