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Mika Prunnila

Mika Prunnila appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.dis-nncond-mat.othercond-mat.supr-conphysics.ins-detquant-ph

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Published work

11 published item(s)

preprint2022arXiv

Broadband continuous variable entanglement generation using Kerr-free Josephson metamaterial

Entangled microwave photons form a fundamental resource for quantum information processing and sensing with continuous variables. We use a low-loss Josephson metamaterial comprising superconducting, non-linear, asymmetric inductive elements to generate frequency-entangled photons from vacuum fluctuations at a rate of 2 giga entangled bits per second spanning over 4 GHz bandwidth. The device is operated as a traveling wave parametric amplifier under Kerr-relieving biasing conditions. Furthermore, we realize the first successfully demonstration of single-mode squeezing in such devices -- $3.1\pm0.7$\,dB below the zero-point level at half of modulation frequency.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Efficient thermionic operation and phonon isolation by a semiconductor-superconductor junction

Control of heat flux at small length scales is crucial for numerous solid-state devices and systems. In addition to the thermal management of information and communication devices the mastering of heat transfer channels down to the nanoscale also enable, e.g., new memory concepts, high sensitivity detectors and sensors, energy harvesters and compact solid-state refrigerators. Electronic coolers and thermal detectors for electromagnetic radiation, especially, rely on the maximization of electro-thermal response and blockade of phonon transport. In this work, we propose and demonstrate that efficient electro-thermal operation and phonon transfer blocking can be achieved in a single solid-state thermionic junction. Our experimental demonstration relies on suspended semiconductor-superconductor junctions where the electro-thermal response arises from the superconducting energy gap, and the phonon blocking naturally results from the transmission bottleneck at the junction. We suspend different size degenerately doped silicon chips (up to macroscopic scale) directly from the junctions and cool these by biasing the junctions. The electronic cooling operation characteristics are accompanied by measurement and analysis of the thermal resistance components in the structures indicating the operation principle of phonon blocking in the junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Traceable Coulomb Blockade Thermometry

We present a measurement and analysis scheme for determining traceable thermodynamic temperature at cryogenic temperatures using Coulomb blockade thermometry. The uncertainty of the electrical measurement is improved by utilizing two sampling digital voltmeters instead of the traditional lock-in technique. The remaining uncertainty is dominated by that of the numerical analysis of the measurement data. Two analysis methods are demonstrated: numerical fitting of the full conductance curve and measuring the height of the conductance dip. The complete uncertainty analysis shows that using either analysis method the relative combined standard uncertainty (k = 1) in determining the thermodynamic temperature in the temperature range from 20 mK to 200 mK is below 0.5 %. In this temperature range, both analysis methods produced temperature estimates that deviated from 0.39 % to 0.67 % from the reference temperatures provided by a superconducting reference point device calibrated against the Provisional Low Temperature Scale of 2000.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Determination of Doping and Temperature Dependent Elastic Constants of Degenerately Doped Silicon from MEMS Resonators

Elastic constants c11, c12 and c44 of degenerately doped silicon are studied experimentally as a function of the doping level and temperature. First and second order temperature coefficients of the elastic constants are extracted from measured resonance frequencies of a set of MEMS resonators fabricated on seven different wafers doped with phosphorus (carrier concentrations 4.1, 4.7, and 7.5*10^19 cm^-3), arsenic (1.7, 2.5*10^19 cm^-3), and boron (0.6, 3*10^19 cm^-3), respectively. Measurements cover a temperature range from -40 to +85 C. It is found that that the linear temperature coefficient of the shear elastic parameter c11-c12 is zero at n-type doping level of n~2*10^19 cm^-3, and that it increases to over 40 ppm/K with increasing doping. This observation implies that the frequency of many types of resonance modes, including extensional bulk modes and flexural modes, can be temperature compensated to first order. The second order temperature coefficient of c11-c12 is found to decrease by 40% in magnitude when n-type doping is increased from 4.1 to 7.5*10^19 cm^-3. Results of this study enable calculation of the frequency drift of an arbitrary silicon resonator design with an accuracy of +/- 25 ppm over T=-40 ... 85 C at the doping levels covered in this work. Absolute frequency can be estimated with an accuracy of +/- 1000 ppm.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Reconstructing phonon mean free path contributions to thermal conductivity using nanoscale membranes

Knowledge of the mean free path distribution of heat-carrying phonons is key to understanding phonon-mediated thermal transport. We demonstrate that thermal conductivity measurements of thin membranes spanning a wide thickness range can be used to characterize how bulk thermal conductivity is distributed over phonon mean free paths. A non-contact transient thermal grating technique was used to measure the thermal conductivity of suspended Si membranes ranging from 15 to 1500 nm in thickness. A decrease in the thermal conductivity from 74% to 13% of the bulk value is observed over this thickness range, which is attributed to diffuse phonon boundary scattering. Due to the well-defined relation between the membrane thickness and phonon mean free path suppression, combined with the range and accuracy of the measurements, we can reconstruct the bulk thermal conductivity accumulation vs. phonon mean free path, and compare with theoretical models.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Dielectric losses in multi-layer Josephson junction qubits

We have measured the excited state lifetimes in Josephson junction phase and transmon qubits, all of which were fabricated with the same scalable multi-layer process. We have compared the lifetimes of phase qubits before and after removal of the isolating dielectric, SiNx, and find a four-fold improvement of the relaxation time after the removal. Together with the results from the transmon qubit and measurements on coplanar waveguide resonators, these measurements indicate that the lifetimes are limited by losses from the dielectric constituents of the qubits. We have extracted the individual loss contributions from the dielectrics in the tunnel junction barrier, AlOx, the isolating dielectric, SiNx, and the substrate, Si/SiO2, by weighing the total loss with the parts of electric field over the different dielectric materials. Our results agree well and complement the findings from other studies, demonstrating that superconducting qubits can be used as a reliable tool for high-frequency characterization of dielectric materials. We conclude with a discussion of how changes in design and material choice could improve qubit lifetimes up to a factor of four.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Interlayer Heat Transfer in Bilayer Carrier Systems

We study theoretically how energy and heat are transferred between the two-dimensional layers of bilayer carrier systems due to near-field interlayer carrier interaction. We derive general expressions for the interlayer heat transfer and thermal conductance. Approximation formulas and detailed calculations for semiconductor and graphene based bilayers are presented. Our calculations for GaAs, Si and graphene bilayers show that the interlayer heat transfer can exceed the electron-phonon heat transfer below (system dependent) finite crossover temperature. We show that disorder strongly enhances the interlayer heat transport and pushes the threshold towards higher temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ultra-Thin Free-Standing Single Crystalline Silicon Membranes With Strain Control

We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling of the released membranes. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineered and the resulting membranes provide a unique laboratory to study low-dimensional electronic, photonic and phononic phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Diffusion-emission theory of photon enhanced thermionic emission solar energy harvesters

Numerical and semi-analytical models are presented for photon-enhanced-thermionic-emission (PETE) devices. The models take diffusion of electrons, inhomogeneous photogeneration, and bulk and surface recombination into account. The efficiencies of PETE devices with silicon cathodes are calculated. Our model predicts significantly different electron affinity and temperature dependence for the device than the earlier model based on a rate-equation description of the cathode. We show that surface recombination can reduce the efficiency below 10% at the cathode temperature of 800 K and the concentration of 1000 suns, but operating the device at high injection levels can increase the efficiency to 15%.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Phonons in Slow Motion: Dispersion Relations in Ultra-Thin Si Membranes

We report the changes in dispersion relations of hypersonic acoustic phonons in free-standing silicon membranes as thin as \sim 8 nm. We observe a reduction of the phase and group velocities of the fundamental flexural mode by more than one order of magnitude compared to bulk values. The modification of the dispersion relation in nanostructures has important consequences for noise control in nano and micro-electromechanical systems (MEMS/NEMS) as well as opto-mechanical devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Acoustic Phonon Tunneling and Heat Transport due to Evanescent Electric Fields

The authors describe how acoustic phonons can directly tunnel through vacuum and, therefore, transmit energy and conduct heat between bodies that are separated by a vacuum gap. This effect is enabled by introducing a coupling mechanism, such as piezoelectricity, that strongly couples electric field and lattice deformation. The electric field leaks into the vacuum as an evanescent field, which leads to finite solid-vacuum-solid transmission probability. Due to strong resonances in the system some phonons can go through the vacuum gap with (or close to) unity transmission, which leads to significant thermal conductance and heat flux.

0 citations0 reviewsNo code linkedOpen access