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Jouni Ahopelto

Jouni Ahopelto contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Electronic Band Structures of Pristine and Chemically Modified Cellulose Allomorphs

We have investigated the structural properties, vibrational spectra, and electronic band structures of crystalline cellulose allomorphs and chemically modified cellulose with quantum chemical methods. The electronic band gaps of cellulose allomorphs I$_α$, I$_β$, II, and III$_1$ lie in the range of 5.0 to 5.6 eV. We show that extra states can be created in the band gap of cellulose by chemical modification. Experimentally feasible amidation of cellulose I$_β$ with aniline or 4,4'- diaminoazobenzene creates narrow bands in the cellulose band gap, reducing the difference between the occupied and empty states to 4.0 or 1.8 eV, respectively. The predicted states 4,4'-diaminoazobenzene-modified cellulose I$_β$ fall in the visible spectrum, suggesting uses in optical applications.

preprint2020arXiv

Properties of Nanocrystalline Silicon Probed by Optomechanics

Nanocrystalline materials exhibit properties that can differ substantially from those of their single crystal counterparts. As such, they provide ways to enhance and optimise their functionality for devices and applications. Here we report on the optical, mechanical and thermal properties of nanocrystalline silicon probed by means of optomechanical nanobeams to extract information of the dynamics of optical absorption, mechanical losses, heat generation and dissipation. The optomechanical nanobeams are fabricated using nanocrystalline films prepared by annealing amorphous silicon layers at different temperatures. The resulting crystallite sizes and the stress in the films can be controlled by the annealing temperature and time and, consequently, the properties of the films can be tuned relatively freely, as demonstrated here by means of electron microscopy and Raman scattering. We show that the nanocrystallite size and the volume fraction of the grain boundaries play a key role in the dissipation rates through non-linear optical and thermal processes. Promising optical (13000) and mechanical (1700) quality factors were found in the optomechanical cavity realised in the nanocrystalline Si resulting from annealing at 950 C. The enhanced absorption and recombination rates via the intra-gap states and the reduced thermal conductivity boost the potential to exploit these non-linear effects in applications, including NEMS, phonon lasing and chaos-based devices.