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Michael Tran

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Published work

5 published item(s)

preprint2022arXiv

Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. Here we leverage the low-power and the inherently binary operation of magnetic tunnel junctions (MTJs) to demonstrate neural network hardware inference based on passive arrays of MTJs. In general, transferring a trained network model to hardware for inference is confronted by degradation in performance due to device-to-device variations, write errors, parasitic resistance, and nonidealities in the substrate. To quantify the effect of these hardware realities, we benchmark 300 unique weight matrix solutions of a 2-layer perceptron to classify the Wine dataset for both classification accuracy and write fidelity. Despite device imperfections, we achieve software-equivalent accuracy of up to 95.3 % with proper tuning of network parameters in 15 x 15 MTJ arrays having a range of device sizes. The success of this tuning process shows that new metrics are needed to characterize the performance and quality of networks reproduced in mixed signal hardware.

preprint2014arXiv

Influence of Ta insertions on the magnetic properties of MgO/CoFeB/MgO films probed by ferromagnetic resonance

We show by vector network analyzer ferromagnetic resonance measurements that low Gilbert damping α down to 0.006 can be achieved in perpendicularly magnetized MgO/CoFeB/MgO thin films with ultra-thin insertions of Ta in the CoFeB layer. While increasing the number of Ta insertions allows thicker CoFeB layers to remain perpendicular, the effective areal magnetic anisotropy does not improve with more insertions, and also comes with an increase in α.

preprint2013arXiv

Asymmetry in effective fields of spin-orbit torques in Pt/Co/Pt stacks

Measurements of switching via spin-orbit coupling (SOC) mechanisms are discussed for a pair of inverted Pt/Co/Pt stacks with asymmetrical Pt thicknesses. Taking into account the planar Hall effect contribution, effective fields of spin-orbit torques (SOT) are evaluated using lock-in measurements of the first and second harmonics of the Hall voltage. Reversing the stack structure leads to significant asymmetries in the switching behavior, including clear evidence of a nonlinear current dependence of the transverse effective field. Our results demonstrate potentially complex interplay in devices with all-metallic interfaces utilizing SOT.

preprint2012arXiv

Effects of lateral device size and material properties on the ferromagnetic resonance response of spinwave eigen-modes in magnetic devices

We analyze the effects of lateral device size and magnetic material parameters on the ferromagnetic resonance (FMR) response. Results presented are directly relevant to widely used FMR experimental techniques for extracting magnetic parameters from thin films, the results of which are often assumed to carry over to corresponding nanometer-sized patterned devices. We show that there can be significant variation in the FMR response with device size, and that the extent of the variation depends on the magnetic material properties. This explains, for example, why different experiments along these lines have yielded different size-dependent trends from damping measurements. Observed trends with increasing size and different material parameters are explained through the evolution of three distinct eigen-modes, demonstrating the respective roles of demagnetization and exchange. It is also shown that there is a crossover of dominant eigen-modes in the response signal, accompanied by conjugating edge-type modes, leading to evident effects in measured linewidth and damping. Among the sizes considered, in higher saturation magnetization, we observe as much as a 40% increase in apparent damping, due solely to device size variation.

preprint2012arXiv

Optical properties of Bi2Te2Se at ambient and high pressure

The temperature dependence of the complex optical properties of the three-dimensional topological insulator Bi2Te2Se is reported for light polarized in the a-b planes at ambient pressure, as well as the effects of pressure at room temperature. This material displays a semiconducting character with a bulk optical gap of 300 meV at 295 K. In addition to the two expected infrared-active vibrations observed in the planes, there is additional fine structure that is attributed to either the removal of degeneracy or the activation of Raman modes due to disorder. A strong impurity band located at 200 cm^{-1} is also observed. At and just above the optical gap, several interband absorptions are found to show a strong temperature and pressure dependence. As the temperature is lowered these features increase in strength and harden. The application of pressure leads to a very abrupt closing of the gap above 8 GPa, and strongly modifies the interband absorptions in the mid-infrared spectral range. While ab initio calculations fail to predict the collapse of the gap, they do successfully describe the size of the band gap at ambient pressure, and the magnitude and shape of the optical conductivity.