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Alberto Ubaldini

Alberto Ubaldini appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

5 published item(s)

preprint2015arXiv

Indirect-to-direct band-gap crossover in few-layer MoTe$_2$

We study the evolution of the band-gap structure in few-layer MoTe$_2$ crystals, by means of low-temperature micro-reflectance (MR) and temperature-dependent photoluminescence (PL) measurements. The analysis of the measurements indicate that, in complete analogy with other semiconducting transition metal dichalchogenides (TMDs), the dominant PL emission peaks originate from direct transitions associated to recombination of excitons and trions. When we follow the evolution of the PL intensity as a function of layer thickness, however, we observe that MoTe$_2$ behaves differently from other semiconducting TMDs investigated earlier. Specifically, the exciton PL yield (integrated PL intensity) is identical for mono and bilayer and it starts decreasing for trilayers. A quantitative analysis of this behavior and of all our experimental observations is fully consistent with mono and bilayer MoTe$_2$ being direct band-gap semiconductors, with tetralayer MoTe$_2$ being an indirect gap semiconductor, and with trilayers having nearly identical direct and indirect gaps.This conclusion is different from the one reached for other recently investigated semiconducting transition metal dichalcogenides, for which only monolayers are found to be direct band-gap semiconductors, with thicker layers having indirect band gaps that are significantly smaller, by hundreds of meV, than the direct gap. We discuss the relevance of our findings for experiments of fundamental interest and possible future device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Bi2Te_xSe_y series studied by resistivity and thermopower

We study the detailed temperature and composition dependence of the resistivity, $ρ(T)$, and thermopower, $S(T)$, for a series of layered bismuth chalcogenides Bi$_2$Te$_{3-x}$Se$_x$, and report the stoichiometry dependence of the optical band gap. In the resistivity of the most compensated member, Bi$_2$Te$_{2.1}$Se$_{0.9}$, we find a low-temperature plateau whose onset temperature correlates with the high-temperature activation energy. For the whole series $S(T)$ can be described by a simple model for an extrinsic semiconductor. By substituting Se for Te, the Fermi level is tuned from the valence band into the conduction band. The maximum values of $S(T)$, bulk band gap as well the activation energy in the resistivity are found for $x \approx 0.9$.

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preprint2014arXiv

Improved chemical vapor transport growth of transition metal dichalcogenides

In the crystal growth of transition metal dichalcogenides by the Chemical Vapor Transport method (CVT), the choice of the transport agent plays a key role. We have investigated the effect of various chemical elements and compounds on the growth of TiSe2, MoSe2, TaS2 and TaSe2 and found that pure I2 is the most suitable for growing TiSe2, whereas transition metal chlorides perform best with Mo- and Ta- chalcogenides. The use of TaCl5 as a transport agent in the CVT process allows to selectively growth either polymorph of TaS2 and TaSe2 and the optimum growth conditions are reported. Moreover, by using TaCl5 and tuning the temperature and the halogen starting ratio, it was possible to grow whiskers of the compounds TaS2, TaSe2, TaTe2, TaS3 and TaSe3.

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preprint2014arXiv

Surface transport and band gap structure of exfoliated 2H-MoTe$_2$ crystals

Semiconducting transition metal dichalcogenides (TMDs) have emerged as materials that can be used to realize two-dimensional (2D) crystals possessing rather unique transport and optical properties. Most research has so far focused on sulfur and selenium compounds, while tellurium-based materials attracted little attention so far. As a first step in the investigation of Te-based semiconducting TMDs in this context, we have studied MoTe$_2$ crystals with thicknesses above 4 nm, focusing on surface transport and a quantitative determination of the gap structure. Using ionic-liquid gated transistors, we show that ambipolar transport at the surface of the material is reproducibly achieved, with hole and electron mobility values between 10 and 30 cm$^2$/Vs at room temperature. The gap structure is determined through three different techniques: ionic-liquid gated transistors and scanning tunneling spectroscopy, that allow the measurement of the indirect gap ($E_{ind}$), and optical transmission spectroscopy on crystals of different thickness, that enables the determination of both the direct ($E_{dir}$) and the indirect gap. We find that at room temperature $E_{ind}$ = 0.88 eV and $E_{dir}$ = 1.02 eV. Our results suggest that thin MoTe$_2$ layers may exhibit a transition to a direct gap before mono-layer thickness. They should also drastically extend the range of direct gaps accessible in 2D semiconducting TMDs.

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preprint2012arXiv

Optical properties of Bi2Te2Se at ambient and high pressure

The temperature dependence of the complex optical properties of the three-dimensional topological insulator Bi2Te2Se is reported for light polarized in the a-b planes at ambient pressure, as well as the effects of pressure at room temperature. This material displays a semiconducting character with a bulk optical gap of 300 meV at 295 K. In addition to the two expected infrared-active vibrations observed in the planes, there is additional fine structure that is attributed to either the removal of degeneracy or the activation of Raman modes due to disorder. A strong impurity band located at 200 cm^{-1} is also observed. At and just above the optical gap, several interband absorptions are found to show a strong temperature and pressure dependence. As the temperature is lowered these features increase in strength and harden. The application of pressure leads to a very abrupt closing of the gap above 8 GPa, and strongly modifies the interband absorptions in the mid-infrared spectral range. While ab initio calculations fail to predict the collapse of the gap, they do successfully describe the size of the band gap at ambient pressure, and the magnitude and shape of the optical conductivity.

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