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Pengyu Long

Pengyu Long appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall

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Published work

5 published item(s)

preprint2016arXiv

High-Performance Complementary III-V Tunnel FETs with Strain Engineering

Strain engineering has recently been explored to improve tunnel field-effect transistors (TFETs). Here, we report design and performance of strained ultra-thin-body (UTB) III-V TFETs by quantum transport simulations. It is found that for an InAs UTB confined in [001] orientation, uniaxial compressive strain in [100] or [110] orientation shrinks the band gap meanwhile reduces (increases) transport (transverse) effective masses. Thus it improves the ON state current of both n-type and p-type UTB InAs TFETs without lowering the source density of states. Applying the strain locally in the source region makes further improvements by suppressing the OFF state leakage. For p-type TFETs, the locally strained area can be extended into the channel to form a quantum well, giving rise to even larger ON state current that is comparable to the n-type ones. Therefore strain engineering is a promising option for improving complementary circuits based on UTB III-V TFETs.

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preprint2016arXiv

P-Type Tunnel FETs With Triple Heterojunctions

A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb heterojunction (HJ) tunnel FETs. The added two HJs (AlInAsSb/InAs in the source and GaSb/AlSb in the channel) significantly shorten the tunnel distance and create two resonant states, greatly improving the ON state tunneling probability. Moreover, the source Fermi degeneracy is reduced by the increased source (AlInAsSb) density of states and the OFF state leakage is reduced by the heavier channel (AlSb) hole effective masses. Quantum ballistic transport simulations show, that with V_{DD} = 0.3V and I_{OFF} = 10^{-3}A/m, I_{ON} of 582A=m (488A=m) is obtained at 30nm (15nm) channel length, which is comparable to n-type 3HJ counterpart and significantly exceeding p-type silicon MOSFET. Simultaneously, the nonlinear turn on and delayed saturation in the output characteristics are also greatly improved.

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preprint2016arXiv

Performance degradation of superlattice MOSFETs due to scattering in the contacts

Ideal, completely coherent quantum transport calculations had predicted that superlattice MOSFETs may offer steep subthreshold swing performance below 60mV/dec to around 39mV/dec. However, the high carrier density in the superlattice source suggest that scattering may significantly degrade the ideal device performance. Such effects of electron scattering and decoherence in the contacts of superlattice MOSFETs are examined through a multiscale quantum transport model developed in NEMO5. This model couples NEGF-based quantum ballistic transport in the channel to a quantum mechanical density of states dominated reservoir, which is thermalized through strong scattering with local quasi-Fermi levels determined by drift-diffusion transport. The simulations show that scattering increases the electron transmission in the nominally forbidden minigap therefore degrading the subthreshold swing (S.S.) and the ON/OFF DC current ratio. This degradation varies with both the scattering rate and the length of the scattering dominated regions. Different superlattice MOSFET designs are explored to mitigate the effects of such deleterious scattering. Specifically, shortening the spacer region between the superlattice and the channel from 3.5 nm to 0 nm improves the simulated S.S. from 51mV/dec. to 40mV/dec. I. INTRODUCTION

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preprint2016arXiv

Scalable GaSb/InAs tunnel FETs with non-uniform body thickness

GaSb/InAs heterojunction tunnel field-effect transistors are strong candidates in building future low-power integrated circuits, as they could provide both steep subthreshold swing and large ON-state current ($I_{\rm{ON}}$). However, at short channel lengths they suffer from large tunneling leakage originating from the small band gap and small effective masses of the InAs channel. As proposed in this article, this problem can be significantly mitigated by reducing the channel thickness meanwhile retaining a thick source-channel tunnel junction, thus forming a design with a non-uniform body thickness. Because of the quantum confinement, the thin InAs channel offers a large band gap and large effective masses, reducing the ambipolar and source-to-drain tunneling leakage at OFF state. The thick GaSb/InAs tunnel junction, instead, offers a low tunnel barrier and small effective masses, allowing a large tunnel probability at ON state. In addition, the confinement induced band discontinuity enhances the tunnel electric field and creates a resonant state, further improving $I_{\rm{ON}}$. Atomistic quantum transport simulations show that ballistic $I_{\rm{ON}}=284$A/m is obtained at 15nm channel length, $I_{\rm{OFF}}=1\times10^{-3}$A/m, and $V_{\rm{DD}}=0.3$V. While with uniform body thickness, the largest achievable $I_{\rm{ON}}$ is only 25A/m. Simulations also indicate that this design is scalable to sub-10nm channel length.

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preprint2015arXiv

Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method

III-V tunneling field-effect transistors (TFETs) offer great potentials in future low-power electronics application due to their steep subthreshold slope and large "on" current. Their 3D quantum transport study using non-equilibrium Green's function method is computationally very intensive, in particular when combined with multiband approaches such as the eight-band K.P method. To reduce the numerical cost, an efficient reduced-order method is developed in this article and applied to study homojunction InAs and heterojunction GaSb-InAs nanowire TFETs. Device performances are obtained for various channel widths, channel lengths, crystal orientations, doping densities, source pocket lengths, and strain conditions.

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