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Source author record

Michael E. Flatté

Michael E. Flatté appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherquant-phcond-mat.dis-nn

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Published work

26 published item(s)

preprint2022arXiv

Driving a pure spin current from nuclear-polarization gradients

A pure spin current is predicted to occur when an external magnetic field and a linearly inhomogeneous spin-only field are appropriately aligned. Under these conditions (such as originate from nuclear contact hyperfine fields that do not affect orbital motion) a linear, spin-dependent dispersion for free electrons emerges from the Landau Hamiltonian. The result is that spins of opposite orientation flow in opposite directions giving rise to a pure spin current. A classical model of the spin and charge dynamics reveals intuitive aspects of the full quantum mechanical solution. We propose optical orientation or electrical polarization experiments to demonstrate this outcome.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Theory of spin-polarized current flow through a localized spin triplet state

We derive a formalism describing quantum-coherent features of spin-polarized charge current through a partially-polarized spin triplet defect in a $\textit{transverse}$ magnetic field. We predict distinct few-milli-tesla-dc magnetoresistance signatures that identify a $\textit{single}$ spin-triplet center's character and reveal the orientation of the spin triplet's zero-field splitting axis relative to the magnetic contact's polarization. For example, in 4H-SiC the single $(hh)$, $(kk)$, $(hk)$, and $(kh)$ divacancies are all distinct. Spin-polarized current flow efficiently polarizes the spin, potentially electrically initializing spin-triplet-based qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface

Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance techniques, however the interpretation of such measurements has been hampered by the lack of a general theory of the phenomena. This article presents such a theory for two electrical spin-resonance techniques, electrically detected magnetic resonance (EDMR) and the recently observed near-zero field magnetoresistance (NZFMR), by generalizing Shockley Read Hall trap-assisted recombination current calculations via stochastic Liouville equations. Spin mixing at this dielectric interface occurs via the hyperfine interaction, which we show can be treated either quantum mechanically or semiclassically, yielding distinctive differences in the current across the interface. By analyzing the bias dependence of NZFMR and EDMR, we find that the recombination in a Si/SiO$_2$ MOSFET is well understood within a semiclassical approach.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Opposite current-induced spin polarizations in bulk-metallic Bi2Se3 and bulk-insulating Bi2Te2Se topological insulator thin flakes

One of the most fundamental and exotic properties of 3D topological insulators (TIs) is spin-momentum-locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other possible conduction channels, such as a trivial two-dimensional electron gas (2DEG) with strong Rashba type spin-orbit interaction (SOI) and bulk conducting states that may possess a spin Hall effect (SHE), can coexist in 3D TIs, making determining the origin of the current induced spin polarization (CISP) difficult. In this work, we directly compared the CISP between bulk-insulating Bi2Te2Se (BTS221) and bulk-metallic Bi2Se3 thin flakes using spin potentiometry. In the bulk insulating BTS221, the observed CISP has a sign consistent with the expected helicity of the SML of the TSS, but an opposite sign to its calculated bulk spin Hall conductivity (SHC). However, compared to BTS221, an opposite CISP is observed in the bulk metallic Bi2Se3, consistent instead with both the expectations of its Rashba-Edelstein effect of the band-bending induced 2DEG and bulk spin Hall Effect (SHE). Our results provide an electrical way to distinguish the TSS from other possible conducting channels in spin transport measurements on 3D TIs, and open ways for the potential applications in charge-spin conversion devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Theory of oblique-field magnetoresistance from spin centers in three-terminal spintronic devices

We present a general stochastic Liouville theory of electrical transport across a barrier between two conductors that occurs via sequential hopping through a single defect's spin-0 to spin-1/2 transition. We find magneto-conductances similar to Hanle features (pseudo-Hanle features) that originate from Pauli blocking without spin accumulation, and also predict that evolution of the defect's spin modifies the conventional Hanle response, producing an inverted Hanle signal from spin center evolution. We propose studies in oblique magnetic fields that would unambiguously determine if a magnetoconductance results from spin-center assisted transport.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Image of dynamic local exchange interactions in the dc magnetoresistance of spin-polarized current through a dopant

We predict strong, dynamical effects in the dc magnetoresistance of current flowing from a spin-polarized electrical contact through a magnetic dopant in a nonmagnetic host. Using the stochastic Liouville formalism we calculate clearly-defined resonances in the dc magnetoresistance when the applied magnetic field matches the exchange interaction with a nearby spin. At these resonances spin precession in the applied magnetic field is canceled by spin evolution in the exchange field, preserving a dynamic bottleneck for spin transport through the dopant. Similar features emerge when the dopant spin is coupled to nearby nuclei through the hyperfine interaction. These features provide a precise means of measuring exchange or hyperfine couplings between localized spins near a surface using spin-polarized scanning tunneling microscopy, without any ac electric or magnetic fields, even when the exchange or hyperfine energy is orders of magnitude smaller than the thermal energy.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Immense magnetic response of exciplex light emission due to correlated spin-charge dynamics

As carriers slowly move through a disordered energy landscape in organic semiconductors, tiny spatial variations in spin dynamics relieve spin blocking at transport bottlenecks or in the electron-hole recombination process that produces light. Large room-temperature magnetic-field effects (MFE) ensue in the conductivity and luminescence. Sources of variable spin dynamics generate much larger MFE if their spatial structure is correlated on the nanoscale with the energetic sites governing conductivity or luminescence such as in co-evaporated organic blends within which the electron resides on one molecule and the hole on the other (an exciplex). Here we show that exciplex recombination in blends exhibiting thermally-activated delayed fluorescence (TADF) produces MFE in excess of 60% at room temperature. In addition, effects greater than 4000% can be achieved by tuning the device's current-voltage response curve by device conditioning. These immense MFEs are both the largest reported values for their device type at room temperature. Our theory traces this MFE and its unusual temperature dependence to changes in spin mixing between triplet exciplexes and light-emitting singlet exciplexes. In contrast, spin mixing of excitons is energetically suppressed, and thus spin mixing produces comparatively weaker MFE in materials emitting light from excitons by affecting the precursor pairs. Demonstration of immense MFE in common organic blends provides a flexible and inexpensive pathway towards magnetic functionality and field sensitivity in current organic devices without patterning the constituent materials on the nanoscale. Magnetic fields increase the power efficiency of unconditioned devices by 30% at room temperature, also showing that magnetic fields may increase the efficiency of the TADF process.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Low loss spin wave resonances in organic-based ferrimagnet vanadium tetracyanoethylene thin films

We experimentally demonstrate high quality factor spin wave resonances in an encapsulated thin film of the organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_\textit{x~2}$) coated on an a-plane sapphire substrate by low temperature chemical vapor deposition. The thickness standing wave modes are observed in a broad frequency range (1 GHz ~ 5 GHz) with high quality factor exceeding 3,200 in ambient air at room temperature, rivaling those of inorganic magnetic materials. The exchange constant of V[TCNE]$_\textit{x~2}$, a crucial material parameter for future study and device design of the V[TCNE]$_\textit{x~2}$, is extracted from the measurement with a value of $(4.61\pm 0.35)\times 10^{-16} \mathrm{\: m^{2}}$. Our result establishes the feasibility of using organic-based materials for building hybrid magnonic devices and circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Manipulation of the electroluminescence of organic light-emitting diodes via fringe fields from patterned magnetic domains

We predict very large changes in the room-temperature electroluminescence of thermally-activated delayed fluorescence organic light emitting diodes near patterned ferromagnetic films. These effects exceed the changes in a uniform magnetic field by as much as a factor of two. We describe optimal ferromagnetic film patterns for enhancing the electroluminescence. A full theory of the spin-mixing processes in exciplex recombination, and how they are affected by hyperfine fields, spin-orbit effects, and ferromagnetic fringe field effects is introduced, and is used to describe the effect of magnetic domain structures on the luminescence in various regimes. This provides a method of enhancing light emission rates from exciplexes and also a means of efficiently coupling information encoded in magnetic domains to organic light emitting diode emission.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Strain-based Spin Manipulation on Substitutional Nickel in Silicon Carbide

By using the full potential linear augmented plane wave (FP-LAPW) method and full potential local orbital minimum basis (FP-LOMB) method within generalized gradient approximation (GGA), we studied the electronic structures and magnetic properties of nickel and chromium single dopants in polytypes of silicon carbide (SiC). The magnetic phases of defects are found to be strongly dependent on the external stress on the supercell. In 3C-SiC, the Ni single dopant exhibits an anti-ferromagnetic (AFM) to ferromagnetic (FM) transition at a moderate compressive and tensile hydrostatic strain in Si-sub and C-sub cases. In contrast, the Ni single dopant in 4H-SiC is stably in the nonmagnetic phase under external stress. The Cr single dopant is also insensitive to the applied stress but stably in the magnetic phase. This strain controlled magnetic transition makes the Ni single dopant a novel scheme of qubit.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride

We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from optically active defects distributed across an energy range that exceeds 500 meV. Spectrally-resolved photon-correlation measurements verify single photon emission, even when multiple emission lines are simultaneously excited within the same h-BN flake. We also present a detailed study of the temperature-dependent linewidth, spectral energy shift, and intensity for two different zero-phonon lines centered at 575 nm and 682 nm, which reveals a nearly identical temperature dependence despite a large difference in transition energy. Our temperature-dependent results are best described by a lattice vibration model that considers piezoelectric coupling to in-plane phonons. Finally, polarization spectroscopy measurements suggest that whereas the 575 nm emission line is directly excited by 532 nm excitation, the 682 nm line is excited indirectly.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Derivation of effective spin-orbit Hamiltonians and spin lifetimes, with application to SrTiO$_3$ heterostructures

A general approach is derived for constructing an effective spin-orbit Hamiltonian for nonmagnetic materials, which is useful for calculating spin-dependent properties near an arbitrary point in momentum space with pseudospin degeneracy. The formalism is verified through comparisons with other approaches for III-V semiconductors, and its general applicability is illustrated by deriving the spin-orbit interaction and predicting spin lifetimes for strained SrTiO$_3$ and a two-dimensional electron gas in SrTiO$_3$ (such as at the LaAlO$_3$/SrTiO$_3$ interface). These results suggest robust spin coherence and spin transport properties in SrTiO$_3$-based materials at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electric-field coupling to spin waves in a centrosymmetric ferrite

We experimentally demonstrate that the spin-orbit interaction can be utilized for direct electric-field tuning of the propagation of spin waves in a single-crystal yttrium iron garnet magnonic waveguide. Magnetoelectric coupling not due to the spin-orbit interaction, and hence an order of magnitude weaker, leads to electric-field modification of the spin-wave velocity for waveguide geometries where the spin-orbit interaction will not contribute. A theory of the phase shift, validated by the experiment data, shows that, in the exchange spin wave regime, this electric tuning can have high efficiency. Our findings point to an important avenue for manipulating spin waves and developing electrically tunable magnonic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Organic Magnetoelectroluminescence for Room Temperature Transduction between Magnetic and Optical Information

Magnetic and spin-based technologies for data storage and processing pose unique challenges for information transduction to light because of magnetic metals' optical loss, and the inefficiency and resistivity of semiconductor spin-based emitters at room temperature. Transduction between magnetic and optical information in typical organic semiconductors poses additional challenges as the Faraday and Kerr magnetooptical effects rely on the electronic spin-orbit interaction, and the spin-orbit interaction in organics is weak. Other methods of coupling light and spin have emerged in organics, however, as the spin-dependent character of exciton recombination, with spin injection from magnetic electrodes, provides magnetization-sensitive light emission, although such approaches have been limited to low temperature and low polarization efficiency. Here we demonstrate room temperature information transduction between a magnet and an organic light emitting diode that does not require electrical current, based on control via the magnet's remanent field of the exciton recombination process in the organic semiconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Organic magnetoresistance from deep traps

We predict that singly-occupied carrier traps, produced by electrical stress or irradiation within organic semiconductors, can cause spin blockades and the large room-temperature magnetoresistance known as organic magnetoresistance. The blockade occurs because many singly-occupied traps can only become doubly occupied in a spin-singlet configuration. Magnetic-field effects on spin mixing during transport dramatically modify the effects of this blockade and produce magnetoresistance.We calculate the quantitative effects of these traps on organic magnetoresistance from percolation theory and find a dramatic nonlinear dependence of the saturated magnetoresistance on trap density, leading to values $\sim$ 20%, within the theory's range of validity.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin Relaxation in Materials Lacking Coherent Charge Transport

We describe a broadly-applicable theory of spin relaxation in materials with incoherent charge transport; examples include amorphous inorganic semiconductors, organic semiconductors, quantum dot arrays, and systems displaying trap-controlled transport or transport within an impurity band. The theory can incorporate many different relaxation mechanisms, so long as electron-electron correlations can be neglected. We focus primarily on spin relaxation caused by spin-orbit effects, which manifest through inhomogeneities in the $g$-factor and non-spin-conserving carrier hops, scattering, trapping, or detrapping. Analytic and numerical results from the theory are compared in various regimes with Monte Carlo simulations. Our results should assist in evaluating the suitability of various disordered materials for spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Tunable Giant Spin Hall Conductivities in a Strong Spin-Orbit Semimetal: Bi$_{1-x}$Sb$_x$

Intrinsic spin Hall conductivities are calculated for strong spin-orbit Bi$_{1-x}$Sb$_x$ semimetals, from the Kubo formula and using Berry curvatures evaluated throughout the Brillouin zone from a tight-binding Hamiltonian. Nearly-crossing bands with strong spin-orbit interaction generate giant spin Hall conductivities in these materials, ranging from 474 ($\hbar$/e)($Ω$cm)$^{-1}$ for bismuth to 96 ($\hbar$/e)($Ω$cm)$^{-1}$ for antimony; the value for bismuth is more than twice that of platinum. The large spin Hall conductivities persist for alloy compositions corresponding to a three-dimensional topological insulator state, such as Bi$_{0.83}$Sb$_{0.17}$. The spin Hall conductivity could be changed by a factor of five for doped Bi, or for Bi$_{0.83}$Sb$_{0.17}$, by changing the chemical potential by 0.5 eV, suggesting the potential for doping or voltage tuned spin Hall current.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Including fringe fields from a nearby ferromagnet in a percolation theory of organic magnetoresistance

Random hyperfine fields are essential to mechanisms of low-field magnetoresistance in organic semiconductors. Recent experiments have shown that another type of random field --- fringe fields due to a nearby ferromagnet --- can also dramatically affect the magnetoresistance. A theoretical analysis of the effect of these fringe fields is challenging, as the fringe field magnitudes and their correlation lengths are orders of magnitude larger than that of the hyperfine couplings. We extend a recent theory of organic magnetoresistance to calculate the magnetoresistance with both hyperfine and fringe fields present. This theory describes several key features of the experimental fringe-field magnetoresistance, including the applied fields where the magnetoresistance reaches extrema, the applied field range of large magnetoresistance effects from the fringe fields, and the sign of the effect.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electron spin-phonon interaction symmetries and tunable spin relaxation in silicon and germanium

Compared with direct-gap semiconductors, the valley degeneracy of silicon and germanium opens up new channels for spin relaxation that counteract the spin degeneracy of the inversion-symmetric system. Here the symmetries of the electron-phonon interaction for silicon and germanium are identified and the resulting spin lifetimes are calculated. Room-temperature spin lifetimes of electrons in silicon are found to be comparable to those in gallium arsenide, however, the spin lifetimes in silicon or germanium can be tuned by reducing the valley degeneracy through strain or quantum confinement. The tunable range is limited to slightly over an order of magnitude by intravalley processes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin-orbit interaction from low-symmetry localized defects in semiconductors

The presence of low-symmetry impurities or defect complexes in the zinc-blende direct-gap semiconductors (e.g. interstitials, DX-centers) results in a novel spin-orbit term in the effective Hamiltonian for the conduction band. The new extrinsic spin-orbit interaction is proportional to the matrix element of the defect potential between the conduction and the valence bands. Because this interaction arises already in the first order of the expansion of the effective Hamiltonian in powers of Uext/Eg << 1 (where Uext is the pseudopotential of an interstitial atom, and Eg is the band gap), its contribution to the spin relaxation rate may exceed that of the previously studied extrinsic contributions, even for moderate concentrations of impurities.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Magnonic band structure of a two-dimensional magnetic superlattice

The frequencies and linewidths of spin waves in a two-dimensional periodic superlattice of magnetic materials are found, using the Landau-Lifshitz-Gilbert equations. The form of the exchange field from a surface-torque-free boundary between magnetic materials is derived, and magnetic-material combinations are identified which produce gaps in the magnonic spectrum across the entire superlattice Brillouin zone for hexagonal and square-symmetry superlattices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Anholonomic spin manipulation in drift transport in semiconductors

We find that the electronic spin rotation induced by drift transport around a closed path in a wide variety of nonmagnetic semiconductors at zero magnetic field depends solely on the physical path taken. Physical paths that produce any possible spin rotation due to transport around a closed path are constructed for electrons experiencing strain or electric fields in (001), (110), or (111)-grown zincblende semiconductor quantum wells. Spin decoherence due to travel along the path is negligible compared to the background spin decoherence rate. The small size of the designed paths (<100 nm scale in GaAs) may lead to applications in nanoscale spintronic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots

The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum dots is calculated using multiband real-space envelope-function theory. The dependence of the Lande' g tensor on electric fields should permit high-frequency g tensor modulation resonance, as well as direct, nonresonant electric-field control of the hole spin. Subharmonic resonances have also been found in g tensor modulation resonance of the holes, due to the strong quadratic dependence of components of the hole g tensor on the electric field.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Electron beam formation from spin-orbit interactions in zincblende semiconductor quantum wells

We find a dramatic enhancement of electron propagation along a narrow range of real-space angles from an isotropic source in a two-dimensional quantum well made from a zincblende semiconductor. This ``electron beam'' formation is caused by the interplay between spin-orbit interaction originating from a perpendicular electric field to the quantum well and the intrinsic spin-orbit field of the zincblende crystal lattice in a quantum well, in situations where the two fields are different in strength but of the same order of magnitude. Beam formation is associated with caustics and can be described semi-classically using a stationary phase analysis.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Electric-field control of a hydrogenic donor's spin in a semiconductor

An AC electric field applied to a donor-bound electron in a semiconductor modulates the orbital character of its wave function, which affects the electron's spin dynamics via the spin-orbit interaction. Numerical calculations of the spin dynamics of a hydrogenic donor (Si) embedded in GaAs, using a real-space multi-band k.p formalism, show the high symmetry of the hydrogenic donor state results in strongly nonlinear dependences of the electronic g tensor on applied fields. A nontrivial consequence is that the most rapid Rabi oscillations occur for electric fields modulated at a subharmonic of the Larmor frequency.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Electric field dependence of spin coherence in (001) GaAs/AlGaAs quantum wells

Conduction electron spin lifetimes ($T_1$) and spin coherence times ($T_2$) are strongly modified in semiconductor quantum wells by electric fields. Quantitative calculations in GaAs/AlGaAs quantum wells at room temperature show roughly a factor of four enhancement in the spin lifetimes at optimal values of the electric fields. The much smaller enhancement compared to previous calculations is due to overestimates of the zero-field spin lifetime and the importance of nonlinear effects.

0 citations0 reviewsNo code linkedOpen access