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Researcher profile

Michael E. Flatté

Michael E. Flatté contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherquant-ph

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Published work

7 published item(s)

preprint2022arXiv

Driving a pure spin current from nuclear-polarization gradients

A pure spin current is predicted to occur when an external magnetic field and a linearly inhomogeneous spin-only field are appropriately aligned. Under these conditions (such as originate from nuclear contact hyperfine fields that do not affect orbital motion) a linear, spin-dependent dispersion for free electrons emerges from the Landau Hamiltonian. The result is that spins of opposite orientation flow in opposite directions giving rise to a pure spin current. A classical model of the spin and charge dynamics reveals intuitive aspects of the full quantum mechanical solution. We propose optical orientation or electrical polarization experiments to demonstrate this outcome.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Theory of spin-polarized current flow through a localized spin triplet state

We derive a formalism describing quantum-coherent features of spin-polarized charge current through a partially-polarized spin triplet defect in a $\textit{transverse}$ magnetic field. We predict distinct few-milli-tesla-dc magnetoresistance signatures that identify a $\textit{single}$ spin-triplet center's character and reveal the orientation of the spin triplet's zero-field splitting axis relative to the magnetic contact's polarization. For example, in 4H-SiC the single $(hh)$, $(kk)$, $(hk)$, and $(kh)$ divacancies are all distinct. Spin-polarized current flow efficiently polarizes the spin, potentially electrically initializing spin-triplet-based qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface

Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance techniques, however the interpretation of such measurements has been hampered by the lack of a general theory of the phenomena. This article presents such a theory for two electrical spin-resonance techniques, electrically detected magnetic resonance (EDMR) and the recently observed near-zero field magnetoresistance (NZFMR), by generalizing Shockley Read Hall trap-assisted recombination current calculations via stochastic Liouville equations. Spin mixing at this dielectric interface occurs via the hyperfine interaction, which we show can be treated either quantum mechanically or semiclassically, yielding distinctive differences in the current across the interface. By analyzing the bias dependence of NZFMR and EDMR, we find that the recombination in a Si/SiO$_2$ MOSFET is well understood within a semiclassical approach.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Opposite current-induced spin polarizations in bulk-metallic Bi2Se3 and bulk-insulating Bi2Te2Se topological insulator thin flakes

One of the most fundamental and exotic properties of 3D topological insulators (TIs) is spin-momentum-locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other possible conduction channels, such as a trivial two-dimensional electron gas (2DEG) with strong Rashba type spin-orbit interaction (SOI) and bulk conducting states that may possess a spin Hall effect (SHE), can coexist in 3D TIs, making determining the origin of the current induced spin polarization (CISP) difficult. In this work, we directly compared the CISP between bulk-insulating Bi2Te2Se (BTS221) and bulk-metallic Bi2Se3 thin flakes using spin potentiometry. In the bulk insulating BTS221, the observed CISP has a sign consistent with the expected helicity of the SML of the TSS, but an opposite sign to its calculated bulk spin Hall conductivity (SHC). However, compared to BTS221, an opposite CISP is observed in the bulk metallic Bi2Se3, consistent instead with both the expectations of its Rashba-Edelstein effect of the band-bending induced 2DEG and bulk spin Hall Effect (SHE). Our results provide an electrical way to distinguish the TSS from other possible conducting channels in spin transport measurements on 3D TIs, and open ways for the potential applications in charge-spin conversion devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Theory of oblique-field magnetoresistance from spin centers in three-terminal spintronic devices

We present a general stochastic Liouville theory of electrical transport across a barrier between two conductors that occurs via sequential hopping through a single defect's spin-0 to spin-1/2 transition. We find magneto-conductances similar to Hanle features (pseudo-Hanle features) that originate from Pauli blocking without spin accumulation, and also predict that evolution of the defect's spin modifies the conventional Hanle response, producing an inverted Hanle signal from spin center evolution. We propose studies in oblique magnetic fields that would unambiguously determine if a magnetoconductance results from spin-center assisted transport.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Image of dynamic local exchange interactions in the dc magnetoresistance of spin-polarized current through a dopant

We predict strong, dynamical effects in the dc magnetoresistance of current flowing from a spin-polarized electrical contact through a magnetic dopant in a nonmagnetic host. Using the stochastic Liouville formalism we calculate clearly-defined resonances in the dc magnetoresistance when the applied magnetic field matches the exchange interaction with a nearby spin. At these resonances spin precession in the applied magnetic field is canceled by spin evolution in the exchange field, preserving a dynamic bottleneck for spin transport through the dopant. Similar features emerge when the dopant spin is coupled to nearby nuclei through the hyperfine interaction. These features provide a precise means of measuring exchange or hyperfine couplings between localized spins near a surface using spin-polarized scanning tunneling microscopy, without any ac electric or magnetic fields, even when the exchange or hyperfine energy is orders of magnitude smaller than the thermal energy.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Anholonomic spin manipulation in drift transport in semiconductors

We find that the electronic spin rotation induced by drift transport around a closed path in a wide variety of nonmagnetic semiconductors at zero magnetic field depends solely on the physical path taken. Physical paths that produce any possible spin rotation due to transport around a closed path are constructed for electrons experiencing strain or electric fields in (001), (110), or (111)-grown zincblende semiconductor quantum wells. Spin decoherence due to travel along the path is negligible compared to the background spin decoherence rate. The small size of the designed paths (<100 nm scale in GaAs) may lead to applications in nanoscale spintronic circuits.

0 citations0 reviewsNo code linkedOpen access