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Markus Wohlgenannt

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Published work

3 published item(s)

preprint2016arXiv

Immense magnetic response of exciplex light emission due to correlated spin-charge dynamics

As carriers slowly move through a disordered energy landscape in organic semiconductors, tiny spatial variations in spin dynamics relieve spin blocking at transport bottlenecks or in the electron-hole recombination process that produces light. Large room-temperature magnetic-field effects (MFE) ensue in the conductivity and luminescence. Sources of variable spin dynamics generate much larger MFE if their spatial structure is correlated on the nanoscale with the energetic sites governing conductivity or luminescence such as in co-evaporated organic blends within which the electron resides on one molecule and the hole on the other (an exciplex). Here we show that exciplex recombination in blends exhibiting thermally-activated delayed fluorescence (TADF) produces MFE in excess of 60% at room temperature. In addition, effects greater than 4000% can be achieved by tuning the device's current-voltage response curve by device conditioning. These immense MFEs are both the largest reported values for their device type at room temperature. Our theory traces this MFE and its unusual temperature dependence to changes in spin mixing between triplet exciplexes and light-emitting singlet exciplexes. In contrast, spin mixing of excitons is energetically suppressed, and thus spin mixing produces comparatively weaker MFE in materials emitting light from excitons by affecting the precursor pairs. Demonstration of immense MFE in common organic blends provides a flexible and inexpensive pathway towards magnetic functionality and field sensitivity in current organic devices without patterning the constituent materials on the nanoscale. Magnetic fields increase the power efficiency of unconditioned devices by 30% at room temperature, also showing that magnetic fields may increase the efficiency of the TADF process.

preprint2014arXiv

Organic Magnetoelectroluminescence for Room Temperature Transduction between Magnetic and Optical Information

Magnetic and spin-based technologies for data storage and processing pose unique challenges for information transduction to light because of magnetic metals' optical loss, and the inefficiency and resistivity of semiconductor spin-based emitters at room temperature. Transduction between magnetic and optical information in typical organic semiconductors poses additional challenges as the Faraday and Kerr magnetooptical effects rely on the electronic spin-orbit interaction, and the spin-orbit interaction in organics is weak. Other methods of coupling light and spin have emerged in organics, however, as the spin-dependent character of exciton recombination, with spin injection from magnetic electrodes, provides magnetization-sensitive light emission, although such approaches have been limited to low temperature and low polarization efficiency. Here we demonstrate room temperature information transduction between a magnet and an organic light emitting diode that does not require electrical current, based on control via the magnet's remanent field of the exciton recombination process in the organic semiconductor.

preprint2013arXiv

Including fringe fields from a nearby ferromagnet in a percolation theory of organic magnetoresistance

Random hyperfine fields are essential to mechanisms of low-field magnetoresistance in organic semiconductors. Recent experiments have shown that another type of random field --- fringe fields due to a nearby ferromagnet --- can also dramatically affect the magnetoresistance. A theoretical analysis of the effect of these fringe fields is challenging, as the fringe field magnitudes and their correlation lengths are orders of magnitude larger than that of the hyperfine couplings. We extend a recent theory of organic magnetoresistance to calculate the magnetoresistance with both hyperfine and fringe fields present. This theory describes several key features of the experimental fringe-field magnetoresistance, including the applied fields where the magnetoresistance reaches extrema, the applied field range of large magnetoresistance effects from the fringe fields, and the sign of the effect.