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Cüneyt Şahin

Cüneyt Şahin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall

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Published work

4 published item(s)

preprint2020arXiv

Opposite current-induced spin polarizations in bulk-metallic Bi2Se3 and bulk-insulating Bi2Te2Se topological insulator thin flakes

One of the most fundamental and exotic properties of 3D topological insulators (TIs) is spin-momentum-locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other possible conduction channels, such as a trivial two-dimensional electron gas (2DEG) with strong Rashba type spin-orbit interaction (SOI) and bulk conducting states that may possess a spin Hall effect (SHE), can coexist in 3D TIs, making determining the origin of the current induced spin polarization (CISP) difficult. In this work, we directly compared the CISP between bulk-insulating Bi2Te2Se (BTS221) and bulk-metallic Bi2Se3 thin flakes using spin potentiometry. In the bulk insulating BTS221, the observed CISP has a sign consistent with the expected helicity of the SML of the TSS, but an opposite sign to its calculated bulk spin Hall conductivity (SHC). However, compared to BTS221, an opposite CISP is observed in the bulk metallic Bi2Se3, consistent instead with both the expectations of its Rashba-Edelstein effect of the band-bending induced 2DEG and bulk spin Hall Effect (SHE). Our results provide an electrical way to distinguish the TSS from other possible conducting channels in spin transport measurements on 3D TIs, and open ways for the potential applications in charge-spin conversion devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin Dynamics of Complex Oxides, Bismuth-Antimony Alloys, and Bismuth Chalcogenides

This thesis predicts that two types of material families could be a solution to the challenges in spintronics: complex oxides and bismuth based materials. We derive a general approach for constructing an effective spin-orbit Hamiltonian, which applies to all nonmagnetic materials. We also verify this formalism through comparisons with other approaches for III-V semiconductors. Its general applicability is illustrated by deriving the spin-orbit interaction and predicting spin lifetimes for strained SrTiO$_3$ and a two-dimensional electron gas (such as at the LaAlO$_3$/SrTiO$_3$ interface). Our results suggest robust spin coherence and spin transport properties in SrTiO$_3$ related materials. In the second part, we calculate intrinsic spin Hall conductivities for Bi$_{1-x}$Sb$_x$ semimetals with strong spin-orbit couplings, from the Kubo formula and using Berry curvatures evaluated from a tight-binding Hamiltonian. Nearly crossing bands with strong spin-orbit interaction generate giant spin Hall conductivities in these materials, ranging from 474 ($\hbar/e)( Ω^{-1}cm^{-1}$) for bismuth to 96($\hbar/e)( Ω^{-1}cm^{-1}$) for antimony; the value for bismuth is more than twice that of platinum. The large spin Hall conductivities persist for alloy compositions corresponding to a three-dimensional topological insulator state, such as Bi$_{0.83}$Sb$_{0.17}$. The spin Hall conductivity could be changed by a factor of 5 for doped Bi, or for Bi$_{0.83}$Sb$_{0.17}$, by changing the chemical potential, suggesting the potential for doping or voltage tuned spin Hall current. We also calculate intrinsic spin Hall conductivities of Bi$_2$Se$_3$ and Bi$_2$Te$_3$ topological insulators from an effective tight-binding Hamiltonian. We conclude that bismuth-antimony alloys and bismuth chalcogenides are primary candidates for efficiently generating spin currents through the spin Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Derivation of effective spin-orbit Hamiltonians and spin lifetimes, with application to SrTiO$_3$ heterostructures

A general approach is derived for constructing an effective spin-orbit Hamiltonian for nonmagnetic materials, which is useful for calculating spin-dependent properties near an arbitrary point in momentum space with pseudospin degeneracy. The formalism is verified through comparisons with other approaches for III-V semiconductors, and its general applicability is illustrated by deriving the spin-orbit interaction and predicting spin lifetimes for strained SrTiO$_3$ and a two-dimensional electron gas in SrTiO$_3$ (such as at the LaAlO$_3$/SrTiO$_3$ interface). These results suggest robust spin coherence and spin transport properties in SrTiO$_3$-based materials at room temperature.

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preprint2014arXiv

Tunable Giant Spin Hall Conductivities in a Strong Spin-Orbit Semimetal: Bi$_{1-x}$Sb$_x$

Intrinsic spin Hall conductivities are calculated for strong spin-orbit Bi$_{1-x}$Sb$_x$ semimetals, from the Kubo formula and using Berry curvatures evaluated throughout the Brillouin zone from a tight-binding Hamiltonian. Nearly-crossing bands with strong spin-orbit interaction generate giant spin Hall conductivities in these materials, ranging from 474 ($\hbar$/e)($Ω$cm)$^{-1}$ for bismuth to 96 ($\hbar$/e)($Ω$cm)$^{-1}$ for antimony; the value for bismuth is more than twice that of platinum. The large spin Hall conductivities persist for alloy compositions corresponding to a three-dimensional topological insulator state, such as Bi$_{0.83}$Sb$_{0.17}$. The spin Hall conductivity could be changed by a factor of five for doped Bi, or for Bi$_{0.83}$Sb$_{0.17}$, by changing the chemical potential by 0.5 eV, suggesting the potential for doping or voltage tuned spin Hall current.

0 citations0 reviewsNo code linkedOpen access