Researcher profile

Mengran Li

Mengran Li contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2026arXiv

CellScientist: Dual-Space Hierarchical Orchestration for Closed-Loop Refinement of Virtual Cell Models

Virtual Cell Modeling (VCM) requires models that not only predict perturbation responses, but also support targeted revision when predictions fail. Current LLM-assisted modeling workflows face a refinement-routing problem: prediction discrepancies are observed through executable implementations, but the relevant revision may involve the modeling assumption, representation design, implementation, or task constraint. Without structured feedback propagation across these levels, iterative refinement may repair code while failing to revise the assumption responsible for the discrepancy. We propose CellScientist, a dual-space hierarchical framework that couples a high-level hypothesis space with a low-level executable implementation space. CellScientist represents modeling decisions as structured states, realizes them as admissible programs under task and interface constraints, and routes execution discrepancies back to targeted hypothesis or implementation updates. This enables a closed Hypothesis -> Implementation -> Hypothesis loop where failures become structured signals for model refinement rather than debugging events. Across morphology and transcriptomic benchmarks, with additional single-cell perturbation evaluations, the final executable models selected by CellScientist improve over reference baselines under fixed split and evaluation protocols, while the workflow produces auditable refinement traces.

preprint2022arXiv

Low Gain Avalanche Detectors with Good Time Resolution Developed by IHEP and IME for ATLAS HGTD project

This paper shows the simulation and test results of 50um thick Low Gain Avalanche Detectors (LGAD) sensors designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Microelectronics of the Chinese Academy of Sciences (IME). Three wafers have been produced with four different gain layer implant doses each. Different production processes, including variation in the n++ layer implant energy and carbon co-implantation were used. Test results show that the IHEP-IME sensors with the higher dose of gain layer have lower breakdown voltages and higher gain layer voltages from capacitance-voltage properties, which are consistent with the TCAD simulation. Beta test results show that the time resolution of IHEP-IME sensors is better than 35ps when operated at high voltage and the collected charges of IHEP-IME sensors are larger than 15fC before irradiation, which fulfill the required specifications of sensors before irradiations for the ATLAS HGTD project.