Researcher profile

Maxim Trushin

Maxim Trushin contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2025arXiv

Electrical generation of surface plasmon polaritons in plasmonic heterostructures

Surface plasmon polaritons (SPPs) can be understood as two-dimensional light confined to a conductor-dielectric interface via plasmonic excitations. While low-energy SPPs behave similarly to photons, higher-frequency SPPs resemble surface plasmons. Electrically generating mid-range SPPs is particularly challenging because it requires compensating for momentum mismatch, a process conventionally achieved through inelastic electron transport in nanostructures. Here, we theoretically demonstrate that electrical SPP generation is possible by directly coupling electron-hole dipoles to the quantized SPP field across an insulating spacer without accompanying electron transport. This approach can be realized in plasmonic van der Waals heterostructures composed of strongly-biased monolayer graphene as the emitter, few-layer hexagonal boron nitride as the spacer, and silver (or gold) as the plasmonic material. In this configuration, graphene's remarkable ability to support a strongly non-equilibrium steady-state electron-hole population results in non-thermal, bias-tunable SPP emission that is uniform along the hBN/Ag interface, achieving a power conversion efficiency of up to 1% and a Purcell factor of up to 100. These findings pave the way for integrating photonic and electronic functionalities within a single two-dimensional heterostructure.

preprint2022arXiv

Phonon-assisted carrier cooling in h-BN/graphene van der Waals heterostructures

Being used in optoelectronic devices as ultra-thin conductor-insulator junctions, detailed investigations are needed about how exactly h-BN and graphene hybridize. Here, we present a comprehensive ab initio study of hot carrier dynamics governed by electron-phonon scattering at the h-BN/graphene interface, using graphite (bulk), monolayer and bilayer graphene as benchmark materials. In contrast to monolayer graphene, all multilayer structures possess low-energy optical phonon modes that facilitate carrier thermalization. We find that the h-BN/graphene interface represents an exception with comparatively weak coupling between low-energy optical phonons and electrons. As a consequence, the thermalization bottleneck effect, known from graphene, survives hybridization with h-BN but is substantially reduced in all other bilayer and multilayer cases considered. In addition, we show that the quantum confinement in bilayer graphene does not have a significant influence on the thermalization time compared to graphite and that bilayer graphene can hence serve as a minimal model for the bulk counterpart.

preprint2020arXiv

Evidence of Rotational Fröhlich Coupling in Polaronic Trions

Electrons commonly couple through Fröhlich interactions with longitudinal optical phonons to form polarons. However, trions possess a finite angular momentum and should therefore couple instead to rotational optical phonons. This creates a polaronic trion whose binding energy is determined by the crystallographic orientation of the lattice. Here, we demonstrate theoretically within the Fröhlich approach and experimentally by photoluminescence emission that the bare trion binding energy (20 meV) is significantly enhanced by the phonons at the interface between the two-dimensional semiconductor MoS$_2$ and the bulk transition metal oxide SrTiO$_3$. The low-temperature {binding energy} changes from 60 meV in [001]-oriented substrates to 90 meV for [111] orientation, as a result of the counter-intuitive interplay between the rotational axis of the MoS$_2$ trion and that of the SrTiO$_3$ phonon mode.

preprint2020arXiv

Harnessing Exciton-Exciton Annihilation in Two-Dimensional Semiconductors

Strong many-body interactions in two-dimensional (2D) semiconductors give rise to efficient exciton-exciton annihilation (EEA). This process is expected to result in the generation of unbound high energy carriers. Here, we report an unconventional photoresponse of van der Waals heterostructure devices resulting from efficient EEA. Our heterostructures, which consist of monolayer transition metal dichalcogenide (TMD), hexagonal boron nitride (hBN), and few-layer graphene, exhibit photocurrent when photoexcited carriers possess sufficient energy to overcome the high energy barrier of hBN. Interestingly, we find that the device exhibits moderate photocurrent quantum efficiency even when the semiconducting TMD layer is excited at its ground exciton resonance despite the high exciton binding energy and large transport barrier. Using ab initio calculations, we show that EEA yields highly energetic electrons and holes with unevenly distributed energies depending on the scattering condition. Our findings highlight the dominant role of EEA in determining the photoresponse of 2D semiconductor optoelectronic devices.

preprint2019arXiv

Universal Fermi-surface anisotropy renormalization for interacting Dirac fermions with long-range interactions

Recent experimental and numerical evidence suggest an intriguing universal relationship between the Fermi surface anisotropy of the non-interacting parent two-dimensional electron gas and the strongly correlated composite Fermi liquid formed in a strong magnetic field close to half-filing. Inspired by these observations, we explore more generally the question of anisotropy renormalization in interacting 2D Fermi systems. Using a recently developed non-perturbative and numerically-exact projective quantum Monte Carlo simulation as well as other numerical and analytic techniques, only for Dirac fermions with long-range Coulomb interactions do we find a universal square-root decrease of the Fermi-surface anisotropy. For the half-filled composite Fermi liquid, this result is surprising since a Dirac fermion ground state was only recently proposed as an alternative to the usual HLR state. The importance of the long-range interaction, expected for Dirac systems, is also consistent with recent transport measurements. Our proposed universality can be tested in several anisotropic Dirac materials including graphene, topological insulators organic conductors, and magic-angle twisted bilayer graphene.