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Maxim Trushin

Maxim Trushin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.optics

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Published work

18 published item(s)

preprint2025arXiv

Electrical generation of surface plasmon polaritons in plasmonic heterostructures

Surface plasmon polaritons (SPPs) can be understood as two-dimensional light confined to a conductor-dielectric interface via plasmonic excitations. While low-energy SPPs behave similarly to photons, higher-frequency SPPs resemble surface plasmons. Electrically generating mid-range SPPs is particularly challenging because it requires compensating for momentum mismatch, a process conventionally achieved through inelastic electron transport in nanostructures. Here, we theoretically demonstrate that electrical SPP generation is possible by directly coupling electron-hole dipoles to the quantized SPP field across an insulating spacer without accompanying electron transport. This approach can be realized in plasmonic van der Waals heterostructures composed of strongly-biased monolayer graphene as the emitter, few-layer hexagonal boron nitride as the spacer, and silver (or gold) as the plasmonic material. In this configuration, graphene's remarkable ability to support a strongly non-equilibrium steady-state electron-hole population results in non-thermal, bias-tunable SPP emission that is uniform along the hBN/Ag interface, achieving a power conversion efficiency of up to 1% and a Purcell factor of up to 100. These findings pave the way for integrating photonic and electronic functionalities within a single two-dimensional heterostructure.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Phonon-assisted carrier cooling in h-BN/graphene van der Waals heterostructures

Being used in optoelectronic devices as ultra-thin conductor-insulator junctions, detailed investigations are needed about how exactly h-BN and graphene hybridize. Here, we present a comprehensive ab initio study of hot carrier dynamics governed by electron-phonon scattering at the h-BN/graphene interface, using graphite (bulk), monolayer and bilayer graphene as benchmark materials. In contrast to monolayer graphene, all multilayer structures possess low-energy optical phonon modes that facilitate carrier thermalization. We find that the h-BN/graphene interface represents an exception with comparatively weak coupling between low-energy optical phonons and electrons. As a consequence, the thermalization bottleneck effect, known from graphene, survives hybridization with h-BN but is substantially reduced in all other bilayer and multilayer cases considered. In addition, we show that the quantum confinement in bilayer graphene does not have a significant influence on the thermalization time compared to graphite and that bilayer graphene can hence serve as a minimal model for the bulk counterpart.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Evidence of Rotational Fröhlich Coupling in Polaronic Trions

Electrons commonly couple through Fröhlich interactions with longitudinal optical phonons to form polarons. However, trions possess a finite angular momentum and should therefore couple instead to rotational optical phonons. This creates a polaronic trion whose binding energy is determined by the crystallographic orientation of the lattice. Here, we demonstrate theoretically within the Fröhlich approach and experimentally by photoluminescence emission that the bare trion binding energy (20 meV) is significantly enhanced by the phonons at the interface between the two-dimensional semiconductor MoS$_2$ and the bulk transition metal oxide SrTiO$_3$. The low-temperature {binding energy} changes from 60 meV in [001]-oriented substrates to 90 meV for [111] orientation, as a result of the counter-intuitive interplay between the rotational axis of the MoS$_2$ trion and that of the SrTiO$_3$ phonon mode.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Harnessing Exciton-Exciton Annihilation in Two-Dimensional Semiconductors

Strong many-body interactions in two-dimensional (2D) semiconductors give rise to efficient exciton-exciton annihilation (EEA). This process is expected to result in the generation of unbound high energy carriers. Here, we report an unconventional photoresponse of van der Waals heterostructure devices resulting from efficient EEA. Our heterostructures, which consist of monolayer transition metal dichalcogenide (TMD), hexagonal boron nitride (hBN), and few-layer graphene, exhibit photocurrent when photoexcited carriers possess sufficient energy to overcome the high energy barrier of hBN. Interestingly, we find that the device exhibits moderate photocurrent quantum efficiency even when the semiconducting TMD layer is excited at its ground exciton resonance despite the high exciton binding energy and large transport barrier. Using ab initio calculations, we show that EEA yields highly energetic electrons and holes with unevenly distributed energies depending on the scattering condition. Our findings highlight the dominant role of EEA in determining the photoresponse of 2D semiconductor optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Universal Fermi-surface anisotropy renormalization for interacting Dirac fermions with long-range interactions

Recent experimental and numerical evidence suggest an intriguing universal relationship between the Fermi surface anisotropy of the non-interacting parent two-dimensional electron gas and the strongly correlated composite Fermi liquid formed in a strong magnetic field close to half-filing. Inspired by these observations, we explore more generally the question of anisotropy renormalization in interacting 2D Fermi systems. Using a recently developed non-perturbative and numerically-exact projective quantum Monte Carlo simulation as well as other numerical and analytic techniques, only for Dirac fermions with long-range Coulomb interactions do we find a universal square-root decrease of the Fermi-surface anisotropy. For the half-filled composite Fermi liquid, this result is surprising since a Dirac fermion ground state was only recently proposed as an alternative to the usual HLR state. The importance of the long-range interaction, expected for Dirac systems, is also consistent with recent transport measurements. Our proposed universality can be tested in several anisotropic Dirac materials including graphene, topological insulators organic conductors, and magic-angle twisted bilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Collinear scattering of photoexcited carriers in graphene

We propose an explicitly solvable model for collinear scattering of photoexcited carriers in intrinsic graphene irradiated by monochromatic light. We find that the collinear scattering rate is directly proportional to the photocarrier energy and derive an analytic expression for the corresponding relaxation time. The result agrees with the recent numerical prediction [Mihnev et al. Nat. Commun. vol. 7, 11617 (2016)] and is able to describe the photocarrier evolution at low energies, where scattering on optical phonons is strongly suppressed.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Optical Absorption by Dirac Excitons in Single-Layer Transition-Metal Dichalcogenides

We develop an analytically solvable model able to qualitatively explain nonhydrogenic exciton spectra observed recently in two-dimensional (2d) semiconducting transition metal dichalcogenides. Our exciton Hamiltonian explicitly includes additional angular momentum associated with the pseudospin degree of freedom unavoidable in 2d semiconducting materials with honeycomb structure. We claim that this is the key ingredient for understanding the nonhydrogenic exciton spectra that was missing so far.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Theory of edge-state optical absorption in two-dimensional transition metal dichalcogenide flakes

We develop an analytical model to describe sub-bandgap optical absorption in two-dimensional semiconducting transition metal dichalcogenide (s-TMD) nanoflakes. The material system represents an array of few-layer molybdenum disulfide crystals, randomly orientated in a polymer matrix. We propose that optical absorption involves direct transitions between electronic edge-states and bulk-bands, depends strongly on the carrier population, and is saturable with sufficient fluence. For excitation energies above half the bandgap, the excess energy is absorbed by the edge-state electrons, elevating their effective temperature. Our analytical expressions for the linear and nonlinear absorption could prove useful tools in the design of practical photonic devices based on s-TMDs.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Charge transport in two dimensions limited by strong short-range scatterers: Going beyond parabolic dispersion and Born approximation

We investigate the conductivity of charge carriers confined to a two-dimensional system with the non-parabolic dispersion $k^N$ with $N$ being an arbitrary natural number. A delta-shaped scattering potential is assumed as the major source of disorder. We employ the exact solution of the Lippmann-Schwinger equation to derive an analytical Boltzmann conductivity formula valid for an arbitrary scattering potential strength. The range of applicability of our analytical results is assessed by a numerical study based on the finite size Kubo formula. We find that for any $N>1$, the conductivity demonstrates a linear dependence on the carrier concentration in the limit of a strong scattering potential strength. This finding agrees with the conductivity measurements performed recently on chirally stacked multilayer graphene where the lowest two bands are non-parabolic and the adsorbed hydrocarbons might act as strong short-range scatterers.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Theory of Conductivity of Chiral Particles

In this methodology focused paper we scrutinize the application of the band-coherent Boltzmann equation approach to calculating the conductivity of chiral particles. As the ideal testing ground we use the two-band kinetic Hamiltonian with an N-fold chiral twist that arise in a low-energy description of charge carriers in rhombohedrally stacked multilayer graphene. To understand the role of chirality in the conductivity of such particles we also consider the artificial model with the chiral winding number decoupled from the power of the dispersion. We first utilize the approximate but analytically solvable band-coherent Boltzmann approach including the ill-understood principal value terms that are a byproduct of several quantum-many body theory derivations of Boltzmann collision integrals. Further on, we employ the finite-size Kubo formula with the exact diagonalization of the total Hamiltonian perturbed by disorder. Finally, we compare several choices of Ansatz in the derivation of the Boltzmann equation according to the qualitative agreement between the Boltzmann and Kubo conductivities. We find that the best agreement can be reached in the approach where the principle value terms in the collision integral are absent.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Polarization-sensitive absorption of THz radiation by interacting electrons in chirally stacked multilayer graphene

We show that opacity of a clean multilayer graphene flake depends on the helicity of the circular polarized electromagnetic radiation. The effect can be understood in terms of the pseudospin selection rules for the interband optical transitions in the presence of exchange electron-electron interactions which alter the pseudospin texture in momentum space. The interactions described within a semi-analytical Hartree--Fock approach lead to the formation of the topologically different broken--symmetry states characterized by Chern numbers and zero-field anomalous Hall conductivities.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Thermally activated conductivity in gapped bilayer graphene

This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates the thermally activated transport. The mechanism proposed can also lead to the non-monotonic conductivity vs. temperature dependence at a band gap size of the order of 10 meV. The effect can be observed in gapped bilayer graphene sandwiched in boron nitride where the electron-hole puddles and flexural phonons are strongly suppressed.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Anisotropic photoconductivity in graphene

We investigate the photoconductivity of graphene within the relaxation time approximation. In presence of the inter-band transitions induced by the linearly polarized light the photoconductivity turns out to be highly anisotropic due to the pseudospin selection rule for Dirac-like carriers. The effect can be observed in clean undoped graphene samples and be utilized for light polarization detection.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Pseudospin in optical and transport properties of graphene

We show that the pseudospin being an additional degree of freedom for carriers in graphene can be efficiently controlled by means of the electron-electron interactions which, in turn, can be manipulated by changing the substrate. In particular, an out-of-plane pseudospin component can occur leading to a zero-field Hall current as well as to polarization-sensitive interband optical absorption.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Finite Conductivity Minimum in Bilayer Graphene without Charge Inhomogeneities

Boltzmann transport theory fails near the linear band-crossing of single-layer graphene and near the quadratic band-crossing of bilayer graphene. We report on a numerical study which assesses the role of inter-band coherence in transport when the Fermi level lies near the band-crossing energy of bilayer graphene. We find that interband coherence enhances conduction, and that it plays an essential role in graphene's minimum conductivity phenomena. This behavior is qualitatively captured by an approximate theory which treats inter-band coherence in a relaxation-time approximation. On the basis of this short-range-disorder model study, we conclude that electron-hole puddle formation is not a necessary condition for finite conductivity in graphene at zero average carrier density.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Anisotropic magnetoresistance of spin-orbit coupled carriers scattered from polarized magnetic impurities

Anisotropic magnetoresistance (AMR) is a relativistic magnetotransport phenomenon arising from combined effects of spin-orbit coupling and broken symmetry of a ferromagnetically ordered state of the system. In this work we focus on one realization of the AMR in which spin-orbit coupling enters via specific spin-textures on the carrier Fermi surfaces and ferromagnetism via elastic scattering of carriers from polarized magnetic impurities. We report detailed heuristic examination, using model spin-orbit coupled systems, of the emergence of positive AMR (maximum resistivity for magnetization along current), negative AMR (minimum resistivity for magnetization along current), and of the crystalline AMR (resistivity depends on the absolute orientation of the magnetization and current vectors with respect to the crystal axes) components. We emphasize potential qualitative differences between pure magnetic and combined electro-magnetic impurity potentials, between short-range and long-range impurities, and between spin-1/2 and higher spin-state carriers. Conclusions based on our heuristic analysis are supported by exact solutions to the integral form of the Boltzmann transport equation in archetypical two-dimensional electron systems with Rashba and Dresselhaus spin-orbit interactions and in the three-dimensional spherical Kohn-Littinger model. We include comments on the relation of our microscopic calculations to standard phenomenology of the full angular dependence of the AMR, and on the relevance of our study to realistic, two-dimensional conduction-band carrier systems and to anisotropic transport in the valence band of diluted magnetic semiconductors.

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preprint2007arXiv

Minimum Electrical and Thermal Conductivity of Graphene: A Quasiclassical Approach

We investigate the minimum conductivity of graphene within a quasiclassical approach taking into account electron-hole coherence effects which stem from the chiral nature of low energy excitations. Relying on an analytical solution of the kinetic equation in the electron-hole coherent and incoherent cases we study both the electrical and thermal conductivity whose relation fullfills Wiedemann-Franz law. We found that the most of the previous findings based on the Boltzmann equation are restricted to only high mobility samples where electron-hole coherence effects are not sufficient.

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preprint2007arXiv

Tunneling into strongly biased Tomonaga-Luttinger liquid

We calculate the tunneling density of states for a Tomonaga-Luttinger liquid placed under a strong bias voltage. For the tunneling through a side-coupled point contact, one can observe the power law singularities in the tunneling density of states separately for the right- and left-movers despite the point-like tunnel contact. Deviations of the nonequilibrium tunneling exponents from the equilibrium case are discussed.

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