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Researcher profile

Dinesh Yadav

Dinesh Yadav contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scihep-exhep-phnucl-th

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Published work

3 published item(s)

preprint2022arXiv

Phonon-assisted carrier cooling in h-BN/graphene van der Waals heterostructures

Being used in optoelectronic devices as ultra-thin conductor-insulator junctions, detailed investigations are needed about how exactly h-BN and graphene hybridize. Here, we present a comprehensive ab initio study of hot carrier dynamics governed by electron-phonon scattering at the h-BN/graphene interface, using graphite (bulk), monolayer and bilayer graphene as benchmark materials. In contrast to monolayer graphene, all multilayer structures possess low-energy optical phonon modes that facilitate carrier thermalization. We find that the h-BN/graphene interface represents an exception with comparatively weak coupling between low-energy optical phonons and electrons. As a consequence, the thermalization bottleneck effect, known from graphene, survives hybridization with h-BN but is substantially reduced in all other bilayer and multilayer cases considered. In addition, we show that the quantum confinement in bilayer graphene does not have a significant influence on the thermalization time compared to graphite and that bilayer graphene can hence serve as a minimal model for the bulk counterpart.

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preprint2021arXiv

Dynamics of QCD Matter -- current status

In this article, there are 18 sections discussing various current topics in the field of relativistic heavy-ion collisions and related phenomena, which will serve as a snapshot of the current state of the art. Section 1 reviews experimental results of some recent light-flavored particle production data from ALICE collaboration. Other sections are mostly theoretical in nature. Very strong but transient magnetic field created in relativistic heavy-ion collisions could have important observational consequences. This has generated a lot of theoretical activity in the last decade. Sections 2, 7, 9, 10 and 11 deal with the effects of the magnetic field on the properties of the QCD matter. There are several unanswered questions about the QCD phase diagram. Sections 3, 11 and 18 discuss various aspects of the QCD phase diagram and phase transitions. Recent years have witnessed interesting developments in foundational aspects of hydrodynamics and their application to heavy-ion collisions. Sections 12, 15, 16 and 17 of this article probe some aspects of this exciting field. Transport coefficients together with their temperature- and density-dependence, are essential inputs in hydrodynamical calculations. Sections 5, 8 and 14 deal with calculation/estimation of various transport coefficients (shear and bulk viscosity, thermal conductivity, relaxation times, etc.) of quark matter and hadronic matter. Sections 4, 6 and 13 deals with interesting new developments in the field. Section 4 discusses color dipole gluon distribution function at small transverse momentum in the form of a series of Bells polynomials. Section 6 discusses the properties of Higgs boson in the quark gluon plasma using Higgs-quark interaction. Section 13 discusses modification of coalescence model to incorporate viscous corrections and application of this model.

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preprint2020arXiv

Harnessing Exciton-Exciton Annihilation in Two-Dimensional Semiconductors

Strong many-body interactions in two-dimensional (2D) semiconductors give rise to efficient exciton-exciton annihilation (EEA). This process is expected to result in the generation of unbound high energy carriers. Here, we report an unconventional photoresponse of van der Waals heterostructure devices resulting from efficient EEA. Our heterostructures, which consist of monolayer transition metal dichalcogenide (TMD), hexagonal boron nitride (hBN), and few-layer graphene, exhibit photocurrent when photoexcited carriers possess sufficient energy to overcome the high energy barrier of hBN. Interestingly, we find that the device exhibits moderate photocurrent quantum efficiency even when the semiconducting TMD layer is excited at its ground exciton resonance despite the high exciton binding energy and large transport barrier. Using ab initio calculations, we show that EEA yields highly energetic electrons and holes with unevenly distributed energies depending on the scattering condition. Our findings highlight the dominant role of EEA in determining the photoresponse of 2D semiconductor optoelectronic devices.

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