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Masaharu Oshima

Masaharu Oshima contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2012arXiv

Atomic-scale characterization of nitrogen-doped graphite: Effects of dopant nitrogen on the local electronic structure of the surrounding carbon atoms

We report the local atomic and electronic structure of a nitrogen-doped graphite surface by scanning tunnelling microscopy, scanning tunnelling spectroscopy, X-ray photoelectron spectroscopy, and first-principles calculations. The nitrogen-doped graphite was prepared by nitrogen ion bombardment followed by thermal annealing. Two types of nitrogen species were identified at the atomic level: pyridinic-N (N bonded to two C nearest neighbours) and graphitic-N (N bonded to three C nearest neighbours). Distinct electronic states of localized π states were found to appear in the occupied and unoccupied regions near the Fermi level at the carbon atoms around pyridinic-N and graphitic-N species, respectively. The origin of these states is discussed based on the experimental results and theoretical simulations.

preprint2012arXiv

Epitaxially Stabilized EuMoO3: A New Itinerant Ferromagnet

Synthesizing metastable phase often opens new functions in materials but is a challenging topic. Thin film techniques have advantages to form materials which do not exist in nature since nonequilibrium processes are frequently utilized. In this study, we successfully synthesize epitaxially stabilized new compound of perovskite Eu2+Mo4+O3 as a thin film form by a pulsed laser deposition. Analogous perovskite SrMoO3 is a highly conducting paramagnetic material, but Eu2+ and Mo4+ are not compatible in equilibrium and previous study found more stable pyrochlore Eu23+Mo24+O7 prefers to form. By using isostructural perovskite substrates, the gain of the interface energy between the film and the substrate stabilizes the matastable EuMoO3 phase. This compound exhibits high conductivity and large magnetic moment, originating from Mo 4d2 electrons and Eu 4f7 electrons, respectively. Our result indi-cates the epitaxial stabilization is effective not only to stabilize crystallographic structures but also to from a new compound which contains unstable combinations of ionic valences in bulk form.

preprint2012arXiv

Interplay between Nitrogen Dopants and Native Point Defects in Graphene

To understand the interaction between nitrogen dopants and native point defects in graphene, we have studied the energetic stability of N-doped graphene with vacancies and Stone-Wales (SW) defect by performing the density functional theory calculations. Our results show that N substitution energetically prefers to occur at the carbon atoms near the defects, especially for those sites with larger bond shortening, indicating that the defect-induced strain plays an important role in the stability of N dopants in defective graphene. In the presence of monovacancy, the most stable position for N dopant is the pyridinelike configuration, while for other point defects studied (SW defect and divacancies) N prefers a site in the pentagonal ring. The effect of native point defects on N dopants is quite strong: While the N doping is endothermic in defect-free graphene, it becomes exothermic for defective graphene. Our results imply that the native point defect and N dopant attract each other, i.e., cooperative effect, which means that substitutional N dopants would increase the probability of point defect generation and vice versa. Our findings are supported by recent experimental studies on the N doping of graphene. Furthermore we point out possibilities of aggregation of multiple N dopants near native point defects. Finally we make brief comments on the effect of Fe adsorption on the stability of N dopant aggregation.