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Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device

We investigated the spin-dependent transport properties of a lateral spin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGa electrodes with perpendicular magnetization. Its current-voltage characteristics show nonlinear behavior below 50 K, indicating that tunnel transport through the MnGa/GaAs Schottky barrier is dominant at low temperatures. We observed clear magnetoresistance (MR) ratio up to 12% at 4 K when applying a magnetic field perpendicular to the film plane. Furthermore, a large spin-dependent output voltage of 33 mV is obtained. These values are the highest in lateral ferromagnetic metal / semiconductor / ferromagnetic metal spin-valve devices reported so far.

preprint2019arXivOpen access
Koki ChonanNguyen Huynh Duy KhangMasaaki TanakaPham Nam Hai
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph
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Koki ChonanNguyen Huynh Duy KhangMasaaki TanakaPham Nam Hai

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