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Researcher profile

Markus Morgenstern

Markus Morgenstern contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.othercond-mat.dis-nncond-mat.str-elphysics.ins-det

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Published work

11 published item(s)

preprint2026arXiv

Probing the band structure of the strongly correlated antiferromagnet NiPS3 across its phase transition

NiPS3 is an exfoliable van-der-Waals intralayer antiferromagnet with zigzag-type spin arrangement. It is distinct from other TMPS3 (TM: transition metal) materials by optical excitations into a strongly correlated state that is tied to the magnetic properties. However, the related, fundamental band structure across the antiferromagnetic phase transition has not been probed yet. Here, we use angular-resolved photoelectron spectroscopy with μm resolution in combination with DFT+U calculations for that purpose. We identify a characteristic band shift across TN. It is attributed to bands of mixed Ni and S character related to the superexchange interaction of Ni 3t2g orbitals. Moreover, we find a structure above the valence band maximum with little angular dispersion that could not be reproduced by the calculations. The discrepancy suggests the influence of many-body interactions beyond the DFT+U approximations in striking contrast to the results on MnPS3 and FePS3, where these calculations were sufficient for an adequate description.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Evidence for local spots of viscous electron flow in graphene at moderate mobility

Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns such as Poiseuille profiles or vortices. The viscous regime has recently been observed in graphene by non-local transport experiments and mapping of the Poiseuille profile. Here, we probe the current-induced surface potential maps of graphene field effect transistors with moderate mobility using scanning probe microscopy at room temperature. We discover micron-sized large areas appearing close to charge neutrality that show current induced electric fields opposing the externally applied field. By estimating the local scattering lengths from the gate dependence of local in-plane electric fields, we find that electron-electron scattering dominates in these areas as expected for viscous flow. Moreover, we suppress the inverted fields by artificially decreasing the electron-disorder scattering length via mild ion bombardment. These results imply that viscous electron flow is omnipresent in graphene devices, even at moderate mobility.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Probing the magnetic band gap of the ferromagnetic topological insulator MnSb$_2$Te$_4$

Mn-rich MnSb$_2$Te$_4$ is a ferromagnetic topological insulator with yet the highest Curie temperature T_C = 45-50 K. It exhibits a magnetic gap at the Dirac point of the topological surface state that disappears above T_C. By scanning tunneling spectroscopy, we probe this gap at different magnetic fields and temperatures. We firstly reveal that the gap size shrinks, when an in-plane magnetic field of up to B = 3 T is applied, but does not close completely as the magnetization is only partially rotated in-plane. This corroborates the magnetic origin of the gap and the complex magnetic structure. In addition, we demonstrate significant spatiotemporal fluctuations of the gap size at temperatures as low as T_C/2, above which the remanent magnetization indeed decays. This temperature is close to the antiferromagnetic transition temperature observed for bulk-type single crystals of MnSb$_2$Te$_4$, highlighting the important role of competing magnetic orders in the formation of the favorable ferromagnetic topological insulator. Our study, thus, provides crucial insights into the complex magnetic gap opening of topological insulators that is decisive for quantum anomalous Hall devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to $0.3\,\mathrm{meV}$. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only $60\mathrm{μeV}$ between upwards and downwards sweeps. Charge noise is studied via long-term measurements at the slope of a Coulomb peak revealing potential fluctuations of $\sim 1\,μ\mathrm{eV}/\mathrm{\sqrt{Hz}}$ at 1\,Hz. This makes h-BN the dielectric with the currently lowest gate hysteresis and lowest low-frequency potential fluctuations reported for low-gap III-V nanowires. The extracted values are similar to state-of-the art quantum dots within Si/SiGe and Si/SiO${_2}$ systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Mechanisms of skyrmion collapse revealed by sub-nm maps of the transition rate

Magnetic skyrmions are key candidates for novel memory, logic, and neuromorphic computing. An essential property is their topological protection caused by the whirling spin texture as described by a robust integer winding number. However, the realization on an atomic lattice leaves a loophole for switching the winding number via concerted rotation of individual spins. Hence, understanding the unwinding microscopically is key to enhance skyrmion stability. Here, we use spin polarized scanning tunneling microscopy to probe skyrmion annihilation by individual hot electrons and obtain maps of the transition rate on the nanometer scale. By applying an in-plane magnetic field, we tune the collapse rate by up to four orders of magnitude. In comparison with first-principles based atomistic spin simulations, the experiments demonstrate a radial symmetric collapse at zero in-plane magnetic field and a transition to the recently predicted chimera collapse at finite in-plane field. Our work opens the route to design criteria for skyrmion switches and improved skyrmion stability.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Probing the Pinning Strength of Magnetic Vortex Cores with sub-nm Resolution

Topological magnetic textures such as vortex cores or skyrmions are key candidates for non-volatile information processing. This exploits the texture movement by current pulses that is typically opposed by pinning. A detailed understanding of pinning is hence crucial with previous experiments being either limited in terms of controlled magnetic texture positioning or in terms of spatial resolution. Here, we use spin-polarized scanning tunneling microscopy to track a magnetic vortex core that is deliberately moved by a 3D magnetic field. The core covering about 10.000 Fe-atoms gets pinned by defects that are only a few nm apart. Reproducing the vortex path via parameter fit, we deduce the pinning potential of the defects as a mexican hat with short-range repulsive and long-range attractive part. By comparison with micromagnetic simulations, the attractive part is attributed to a local suppression of exchange interaction. The novel approach to deduce defect induced pinning potentials on the sub-nm scale is transferable to other non-collinear spin textures eventually enabling an atomic scale design of defect configurations, e.g., for reliable read-out in race-track type devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strong and Weak Three-Dimensional Topological Insulators Probed by Surface Science Methods

We review the contributions of surface science methods to discover and improve 3D topological insulator materials, while illustrating with examples from our own work. In particular, we demonstrate that spin-polarized angular-resolved photoelectron spectroscopy is instrumental to evidence the spin-helical surface Dirac cone, to tune its Dirac point energy towards the Fermi level, and to discover novel types of topological insulators such as dual ones or switchable ones in phase change materials. Moreover, we introduce procedures to spatially map potential fluctuations by scanning tunneling spectroscopy and to identify topological edge states in weak topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Versatile scanning tunneling microscopy with 120ps time resolution

We describe a fully ultra-high vacuum compatible scanning tunneling microscope (STM) optimized for radio-frequency signals. It includes in-situ exchangeable tips adapted to high frequency cabling and a standard sample holder, which offer access to the whole range of samples typically investigated by STM. We demonstrate a time resolution of 120 ps using the nonlinear I(V)-characteristic of the surface of highly oriented pyrolithic graphite. We provide atomically resolved images in pulse mode related to a spatially varying nonlinearity of the local density of states of the sample, thus, demonstrating the possible spatial resolution of the instrument in pulse mode. Analysis of the noise reveals that changes in the tunneling junction of 50 pA are dynamically detectable at 120 ps time resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Scanning Tunneling Microscopy and Spectroscopy of Graphene on Insulating Substrates

Graphene is a truly two-dimensional material with exceptional electronic, mechanical, and optical properties. As such, it consists of surface only and can be probed by the well developed surface-science techniques as, e.g., scanning tunneling microscopy. This method bridges the gap between the surface science community and the electronic device community and might lead to novel combined approaches. Here, I review some of the scanning tunneling microscopy (STM) and spectroscopy (STS) experiments on monolayer graphene samples. I will concentrate on graphene samples deposited on insulating substrates, since these are related to graphene device concepts. In particular, I will discuss the morphology of graphene on SiO$_2$ and other emerging substrates, some nanomechanical manipulation experiments using STM, and spectroscopic results. The latter can map the disorder potentials as well as the interaction of the electrons with the disorder which is most pronounced in the quantum Hall regime.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Scanning tunneling microscopy with InAs nanowire tips

Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with submicrometer precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z-noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The molecular structure of the H2O wetting layer on Pt(111)

The molecular structure of the wetting layer of ice on Pt(111) is resolved using scanning tunneling microscopy (STM). Two structures observed previously by diffraction techniques are imaged for coverages at or close to completion of the wetting layer. At 140K only a sqrt(37) x sqrt(37) R25.3° superstructure can be established, while at 130K also a sqrt(39) x sqrt(39) R16.1° superstructure with slightly higher molecular density is formed. In the temperature range under concern the superstructures reversibly transform into each other by slight changes in coverage through adsorption or desorption. The superstructures exhibit a complex pattern of molecules in different geometries.

0 citations0 reviewsNo code linkedOpen access