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Markus Morgenstern

Markus Morgenstern appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.othercond-mat.dis-nncond-mat.str-elphysics.comp-phphysics.ins-det

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Published work

22 published item(s)

preprint2026arXiv

Probing the band structure of the strongly correlated antiferromagnet NiPS3 across its phase transition

NiPS3 is an exfoliable van-der-Waals intralayer antiferromagnet with zigzag-type spin arrangement. It is distinct from other TMPS3 (TM: transition metal) materials by optical excitations into a strongly correlated state that is tied to the magnetic properties. However, the related, fundamental band structure across the antiferromagnetic phase transition has not been probed yet. Here, we use angular-resolved photoelectron spectroscopy with μm resolution in combination with DFT+U calculations for that purpose. We identify a characteristic band shift across TN. It is attributed to bands of mixed Ni and S character related to the superexchange interaction of Ni 3t2g orbitals. Moreover, we find a structure above the valence band maximum with little angular dispersion that could not be reproduced by the calculations. The discrepancy suggests the influence of many-body interactions beyond the DFT+U approximations in striking contrast to the results on MnPS3 and FePS3, where these calculations were sufficient for an adequate description.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Evidence for local spots of viscous electron flow in graphene at moderate mobility

Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns such as Poiseuille profiles or vortices. The viscous regime has recently been observed in graphene by non-local transport experiments and mapping of the Poiseuille profile. Here, we probe the current-induced surface potential maps of graphene field effect transistors with moderate mobility using scanning probe microscopy at room temperature. We discover micron-sized large areas appearing close to charge neutrality that show current induced electric fields opposing the externally applied field. By estimating the local scattering lengths from the gate dependence of local in-plane electric fields, we find that electron-electron scattering dominates in these areas as expected for viscous flow. Moreover, we suppress the inverted fields by artificially decreasing the electron-disorder scattering length via mild ion bombardment. These results imply that viscous electron flow is omnipresent in graphene devices, even at moderate mobility.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Probing the magnetic band gap of the ferromagnetic topological insulator MnSb$_2$Te$_4$

Mn-rich MnSb$_2$Te$_4$ is a ferromagnetic topological insulator with yet the highest Curie temperature T_C = 45-50 K. It exhibits a magnetic gap at the Dirac point of the topological surface state that disappears above T_C. By scanning tunneling spectroscopy, we probe this gap at different magnetic fields and temperatures. We firstly reveal that the gap size shrinks, when an in-plane magnetic field of up to B = 3 T is applied, but does not close completely as the magnetization is only partially rotated in-plane. This corroborates the magnetic origin of the gap and the complex magnetic structure. In addition, we demonstrate significant spatiotemporal fluctuations of the gap size at temperatures as low as T_C/2, above which the remanent magnetization indeed decays. This temperature is close to the antiferromagnetic transition temperature observed for bulk-type single crystals of MnSb$_2$Te$_4$, highlighting the important role of competing magnetic orders in the formation of the favorable ferromagnetic topological insulator. Our study, thus, provides crucial insights into the complex magnetic gap opening of topological insulators that is decisive for quantum anomalous Hall devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

We characterize InSb quantum dots induced by bottom finger gates within a nanowire that is grown via the vapor-liquid-solid process. The gates are separated from the nanowire by an exfoliated 35\,nm thin hexagonal BN flake. We probe the Coulomb diamonds of the gate induced quantum dot exhibiting charging energies of $\sim 2.5\,\mathrm{meV}$ and orbital excitation energies up to $0.3\,\mathrm{meV}$. The gate hysteresis for sweeps covering 5 Coulomb diamonds reveals an energy hysteresis of only $60\mathrm{μeV}$ between upwards and downwards sweeps. Charge noise is studied via long-term measurements at the slope of a Coulomb peak revealing potential fluctuations of $\sim 1\,μ\mathrm{eV}/\mathrm{\sqrt{Hz}}$ at 1\,Hz. This makes h-BN the dielectric with the currently lowest gate hysteresis and lowest low-frequency potential fluctuations reported for low-gap III-V nanowires. The extracted values are similar to state-of-the art quantum dots within Si/SiGe and Si/SiO${_2}$ systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Mechanisms of skyrmion collapse revealed by sub-nm maps of the transition rate

Magnetic skyrmions are key candidates for novel memory, logic, and neuromorphic computing. An essential property is their topological protection caused by the whirling spin texture as described by a robust integer winding number. However, the realization on an atomic lattice leaves a loophole for switching the winding number via concerted rotation of individual spins. Hence, understanding the unwinding microscopically is key to enhance skyrmion stability. Here, we use spin polarized scanning tunneling microscopy to probe skyrmion annihilation by individual hot electrons and obtain maps of the transition rate on the nanometer scale. By applying an in-plane magnetic field, we tune the collapse rate by up to four orders of magnitude. In comparison with first-principles based atomistic spin simulations, the experiments demonstrate a radial symmetric collapse at zero in-plane magnetic field and a transition to the recently predicted chimera collapse at finite in-plane field. Our work opens the route to design criteria for skyrmion switches and improved skyrmion stability.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Probing the Pinning Strength of Magnetic Vortex Cores with sub-nm Resolution

Topological magnetic textures such as vortex cores or skyrmions are key candidates for non-volatile information processing. This exploits the texture movement by current pulses that is typically opposed by pinning. A detailed understanding of pinning is hence crucial with previous experiments being either limited in terms of controlled magnetic texture positioning or in terms of spatial resolution. Here, we use spin-polarized scanning tunneling microscopy to track a magnetic vortex core that is deliberately moved by a 3D magnetic field. The core covering about 10.000 Fe-atoms gets pinned by defects that are only a few nm apart. Reproducing the vortex path via parameter fit, we deduce the pinning potential of the defects as a mexican hat with short-range repulsive and long-range attractive part. By comparison with micromagnetic simulations, the attractive part is attributed to a local suppression of exchange interaction. The novel approach to deduce defect induced pinning potentials on the sub-nm scale is transferable to other non-collinear spin textures eventually enabling an atomic scale design of defect configurations, e.g., for reliable read-out in race-track type devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strong and Weak Three-Dimensional Topological Insulators Probed by Surface Science Methods

We review the contributions of surface science methods to discover and improve 3D topological insulator materials, while illustrating with examples from our own work. In particular, we demonstrate that spin-polarized angular-resolved photoelectron spectroscopy is instrumental to evidence the spin-helical surface Dirac cone, to tune its Dirac point energy towards the Fermi level, and to discover novel types of topological insulators such as dual ones or switchable ones in phase change materials. Moreover, we introduce procedures to spatially map potential fluctuations by scanning tunneling spectroscopy and to identify topological edge states in weak topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electronic Structure of the Dark Surface of the Weak Topological Insulator Bi14Rh3I9

The compound Bi14Rh3I9 consists of ionic stacks of intermetallic [(Bi4Rh)3I]2+ and insulating [Bi2I8]2- layers and has been identified to be a weak topological insulator. Scanning tunneling microscopy revealed the robust edge states at all step edges of the cationic layer as a topological fingerprint. However, these edge states are found 0.25 eV below the Fermi level which is an obstacle for transport experiments. Here, we address this obstacle by comparing results of density functional slab calculations with scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy. We show that the n-type doping of the intermetallic layer is intrinsically caused by the polar surface and is well screened towards the bulk. In contrast, the anionic "spacer" layer shows a gap at the Fermi level, both, on the surface and in the bulk, i.e. it is not surface-doped due to iodine desorption. The well screened surface dipole implies that a buried edge state, probably already below a single spacer layer, is located at the Fermi level. Consequently, a multilayer step covered by a spacer layer could provide access to the transport properties of the topological edge states. In addition, we find a lateral electronic modulation of the topologically non-trivial surface layer which is traced back to the coupling with the underlying zigzag chain structure of the spacer layer.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electrostatically confined monolayer graphene quantum dots with orbital and valley splittings

The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in bilayer graphene. So far, these approaches suffer from edge disorder or insufficiently controlled localization of electrons. Here we realize an alternative strategy in monolayer graphene, by combining a homogeneous magnetic field and electrostatic confinement. Using the tip of a scanning tunneling microscope, we induce a confining potential in the Landau gaps of bulk graphene without the need for physical edges. Gating the localized states towards the Fermi energy leads to regular charging sequences with more than 40 Coulomb peaks exhibiting typical addition energies of 7-20 meV. Orbital splittings of 4-10 meV and a valley splitting of about 3 meV for the first orbital state can be deduced. These experimental observations are quantitatively reproduced by tight binding calculations, which include the interactions of the graphene with the aligned hexagonal boron nitride substrate. The demonstrated confinement approach appears suitable to create quantum dots with well-defined wave function properties beyond the reach of traditional techniques.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Probing variations of the Rashba spin-orbit coupling at the nanometer scale

The Rashba effect as an electrically tunable spin-orbit interaction is the base for a multitude of possible applications such as spin filters, spin transistors, and quantum computing using Majorana states in nanowires. Moreover, this interaction can determine the spin dephasing and antilocalization phenomena in two dimensions. However, the real space pattern of the Rashba parameter has never been probed, albeit it critically influences, e.g., the more robust spin transistors using the spin helix state and the otherwise forbidden electron backscattering in topologically protected channels. Here, we map this pattern down to nanometer length scales by measuring the spin splitting of the lowest Landau level using scanning tunnelling spectroscopy. We reveal strong fluctuations correlated with the local electrostatic potential for an InSb inversion layer with a large Rashba coefficient (~1 eVÅ). The novel type of Rashba field mapping enables a more comprehensive understanding of the critical fluctuations, which might be decisive towards robust semiconductor-based spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Graphene quantum dots probed by scanning tunneling spectroscopy and transport spectroscopy after local anodic oxidation

Graphene quantum dots are considered as promising alternatives to quantum dots in III-V semiconductors, e.g., for the use as spin qubits due to their consistency made of light atoms including spin-free nuclei which both imply relatively long spin decoherene times. However, this potential has not been realized in experiments so far, most likely, due to a missing control of the edge configurations of the quantum dots. Thus, a more fundamental investigation of Graphene quantum dots appears to be necessary including a full control of the wave function properties most favorably during transport spectroscopy measurements. Here, we review the recent success in mapping wave functions of graphene quantum dots supported by metals, in particular Ir(111), and show how the goal of probing such wave functions on insulating supports during transport spectroscopy might be achieved.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Realization of a vertical topological p-n junction in epitaxial $\mathrm{Sb_2Te_3 / Bi_2Te_3}$ heterostructures

3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial material. There have been various attempts to tune the Dirac point to a desired energetic position for exploring its unusual quantum properties. Here we show a direct experimental proof by angle-resolved photoemission of the realization of a vertical topological p-n junction made of a heterostructure of two different binary 3D TI materials $\mathrm{Bi_2Te_3}$ and $\mathrm{Sb_2Te_3}$ epitaxially grown on Si(111). We demonstrate that the chemical potential is tunable by about 200 meV when decreasing the upper $\mathrm{Sb_2Te_3}$ layer thickness from 25 to 6 quintuple layers without applying any external bias. These results make it realistic to observe the topological exciton condensate and pave the way of exploring other exotic quantum phenomena in the near future.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spatially resolved Landau level spectroscopy of the topological Dirac cone of bulk-type Sb2Te3(0001): potential fluctuations and quasiparticle lifetime

Using low temperature scanning tunneling spectroscopy, we probe the Landau levels of the topologically protected state of Sb2Te3(0001) after in-situ cleavage of a single crystal. Landau levels are visible for magnetic fields B > 2 T at energies, which confirm the Dirac type dispersion including the zeroth Landau level. We find different Dirac velocities for the lower and the upper part of the Dirac cone in reasonable agreement with previous density functional theory data. The Dirac point deduced from the zeroth Landau level shifts by about 40 meV between different areas of the sample indicating long range potential fluctuations. The local potentials are correlated to different local defect densities varying slightly stronger than expected from a statistical distribution. The quasiparticle lifetime deduced from the width of the Landau level peaks decreases close to inversely with the electron energy with respect to the Fermi level. Consequently, we attribute the peak width to a dominating scattering of the hot quasiparticles by electron-electron interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Sub-nm wide electron channels protected by topology

Helical locking of spin and momentum and prohibited backscattering are the key properties of topologically protected states. They are expected to enable novel types of information processing such as spintronics by providing pure spin currents, or fault tolerant quantum computation by using the Majorana fermions at interfaces of topological states with superconductors. So far, the required helical conduction channels used to realize Majorana fermions are generated through application of an axial magnetic field to conventional semiconductor nanowires. Avoiding the magnetic field enhances the possibilities for circuit design significantly. Here, we show that sub-nanometer wide electron channels with natural helicity are present at surface step-edges of the recently discovered topological insulator Bi14Rh3I9. Scanning tunneling spectroscopy reveals the electron channels to be continuous in both energy and space within a large band gap of 200 meV, thereby, evidencing its non-trivial topology. The absence of these channels in the closely related, but topologically trivial insulator Bi13Pt3I7 corroborates the channels' topological nature. The backscatter-free electron channels are a direct consequence of Bi14Rh3I9's structure, a stack of 2D topologically insulating, graphene-like planes separated by trivial insulators. We demonstrate that the surface of Bi14Rh3I9 can be engraved using an atomic force microscope, allowing networks of protected channels to be patterned with nm precision.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tuning the Dirac point to the Fermi level in the ternary topological insulator (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$

In order to stabilize Majorana excitations within vortices of proximity induced topological superconductors, it is mandatory that the Dirac point matches the Fermi level rather exactly, such that the conventionally confined states within the vortex are well separated from the Majorana-type excitation. Here, we show by angle resolved photoelectron spectroscopy that (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ thin films with $x=0.94$ prepared by molecular beam epitaxy and transferred in ultrahigh vacuum from the molecular beam epitaxy system to the photoemission setup matches this condition. The Dirac point is within 10 meV around the Fermi level and we do not observe any bulk bands intersecting the Fermi level.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic and magnetic properties of zigzag graphene nanoribbons on the (111) surface of Cu, Ag and Au

We have carried out an ab initio study of the structural, electronic and magnetic properties of zigzag graphene nanoribbons on Cu(111), Ag(111) and Au(111). Both, H-free and H-terminated nanoribbons are considered revealing that the nanoribbons invariably possess edge states when deposited on these surfaces. In spite of this, they do not exhibit a significant magnetization at the edge, with the exception of H-terminated nanoribbons on Au(111), whose zero-temperature magnetic properties are comparable to those of free-standing nanoribbons. These results are explained by the different hybridization between the graphene 2p orbitals and those of the substrates and, for some models, by the sizable charge transfer between the surface and the nanoribbon. Interestingly, H-free nanoribbons on Au(111) and Ag(111) exhibit two main peaks in the local density of states around the Fermi energy, which originate from different states and, thus, do not indicate edge magnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Evidence for topological band inversion of the phase change material Ge2Sb2Te5

We present an angle-resolved photoemission study of a ternary phase change material, namely Ge2Sb2Te5, epitaxially grown on Si(111) in the metastable cubic phase. The observed upper bulk valence band shows a minimum at Gamma-bar being 0.3 eV below the Fermi level E_F and a circular Fermi contour around Gamma-bar with a dispersing diameter of 0.27-0.36 Anstroms^-1. This is in agreement with density functional theory calculations of the Petrov stacking sequence in the cubic phase which exhibits a topological surface state. The topologically trivial cubic KH stacking shows a valence band maximum at Gamma in line with all previous calculations of the hexagonal stable phase exhibiting the valence band maximum at Gamma for a trivial Z_2 topological invariant nu_0 and away from Gamma for non-trivial nu_0. Scanning tunneling spectroscopy exhibits a band gap of 0.4 eV around E_F.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Versatile scanning tunneling microscopy with 120ps time resolution

We describe a fully ultra-high vacuum compatible scanning tunneling microscope (STM) optimized for radio-frequency signals. It includes in-situ exchangeable tips adapted to high frequency cabling and a standard sample holder, which offer access to the whole range of samples typically investigated by STM. We demonstrate a time resolution of 120 ps using the nonlinear I(V)-characteristic of the surface of highly oriented pyrolithic graphite. We provide atomically resolved images in pulse mode related to a spatially varying nonlinearity of the local density of states of the sample, thus, demonstrating the possible spatial resolution of the instrument in pulse mode. Analysis of the noise reveals that changes in the tunneling junction of 50 pA are dynamically detectable at 120 ps time resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Networks of ABA and ABC stacked graphene on mica observed by scanning tunneling microscopy

Graphene flakes are prepared on freshly cleaved mica by exfoliation and studied by scanning tunneling microscopy in ultra high vacuum. On few-layer graphene, a triangular network of partial dislocations separating ABC stacked and ABA stacked graphene was found similar to the networks occasionally visible on freshly cleaved HOPG. We found differences in the electronic structure of ABC and ABA stacked areas by scanning tunneling spectroscopy, i.e., a pronounced peak at 0.25 eV above the Fermi level exclusively in the ABA areas, which is shown to be responsible for the different apparent heights observed in STM images.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Scanning Tunneling Microscopy and Spectroscopy of Graphene on Insulating Substrates

Graphene is a truly two-dimensional material with exceptional electronic, mechanical, and optical properties. As such, it consists of surface only and can be probed by the well developed surface-science techniques as, e.g., scanning tunneling microscopy. This method bridges the gap between the surface science community and the electronic device community and might lead to novel combined approaches. Here, I review some of the scanning tunneling microscopy (STM) and spectroscopy (STS) experiments on monolayer graphene samples. I will concentrate on graphene samples deposited on insulating substrates, since these are related to graphene device concepts. In particular, I will discuss the morphology of graphene on SiO$_2$ and other emerging substrates, some nanomechanical manipulation experiments using STM, and spectroscopic results. The latter can map the disorder potentials as well as the interaction of the electrons with the disorder which is most pronounced in the quantum Hall regime.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Scanning tunneling microscopy with InAs nanowire tips

Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with submicrometer precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z-noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The molecular structure of the H2O wetting layer on Pt(111)

The molecular structure of the wetting layer of ice on Pt(111) is resolved using scanning tunneling microscopy (STM). Two structures observed previously by diffraction techniques are imaged for coverages at or close to completion of the wetting layer. At 140K only a sqrt(37) x sqrt(37) R25.3° superstructure can be established, while at 130K also a sqrt(39) x sqrt(39) R16.1° superstructure with slightly higher molecular density is formed. In the temperature range under concern the superstructures reversibly transform into each other by slight changes in coverage through adsorption or desorption. The superstructures exhibit a complex pattern of molecules in different geometries.

0 citations0 reviewsNo code linkedOpen access