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Scanning tunneling microscopy with InAs nanowire tips

Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with submicrometer precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z-noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.

preprint2012arXivOpen access
Kilian FlöhrKamil SladekH. Yusuf GünelMihail Ion LepsaHilde HardtdegenMarcus LiebmannThomas SchäpersMarkus Morgenstern
cond-mat.mes-hall
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Kilian FlöhrKamil SladekH. Yusuf GünelMihail Ion LepsaHilde HardtdegenMarcus LiebmannThomas SchäpersMarkus Morgenstern

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