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Mark T. Wade

Mark T. Wade contributes to research discovery and scholarly infrastructure.

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physics.optics quant-ph

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preprint2015arXiv

Add-drop filter based on dual photonic crystal nanobeam cavities in push-pull mode

We demonstrate an add-drop filter based on a dual photonic crystal nanobeam cavity system that emulates the operation of a traveling-wave resonator and drops light on resonance to a single output port. Realized on an advanced SOI CMOS (IBM 45nm SOI) chip without any foundry process modifications, the device shows 16dB extinction in through port and 1dB loss in drop port with a 3dB bandwidth of 64GHz. To the best of our knowledge, this is the first implementation of a four-port add-drop filter based on photonic crystal nanobeam cavities.

preprint2015arXiv

Quantum-correlated photon pairs generated in a commercial 45nm complementary metal-oxide semiconductor microelectronics chip

Correlated photon pairs are a fundamental building block of quantum photonic systems. While pair sources have previously been integrated on silicon chips built using customized photonics manufacturing processes, these often take advantage of only a small fraction of the established techniques for microelectronics fabrication and have yet to be integrated in a process which also supports electronics. Here we report the first demonstration of quantum-correlated photon pair generation in a device fabricated in an unmodified advanced (sub-100nm) complementary metal-oxide-semiconductor (CMOS) process, alongside millions of working transistors. The microring resonator photon pair source is formed in the transistor layer structure, with the resonator core formed by the silicon layer typically used for the transistor body. With ultra-low continuous-wave on-chip pump powers ranging from 5 $μ$W to 400 $μ$W, we demonstrate pair generation rates between 165 Hz and 332 kHz using >80% efficient WSi superconducting nanowire single photon detectors. Coincidences-to-accidentals ratios consistently exceeding 40 were measured with a maximum of 55. In the process of characterizing this source we also accurately predict pair generation rates from the results of classical four-wave mixing measurements. This proof-of-principle device demonstrates the potential of commercial CMOS microelectronics as an advanced quantum photonics platform with capability of large volume, pristine process control, and where state-of-the-art high-speed digital circuits could interact with quantum photonic circuits.

preprint2014arXiv

Photonic Crystal Microcavities in a Microelectronics 45nm SOI CMOS Technology

We demonstrate the first monolithically integrated linear photonic crystal microcavities in an advanced SOI CMOS microelectronics process (IBM 45nm 12SOI) with no in-foundry process modifications. The cavities were integrated into a standard microelectronics design flow meeting process design rules, and fabricated alongside transistors native to the process. We demonstrate both 1520nm wavelength and 1180nm cavity designs using different cavity implementations due to design rule constraints. For the 1520nm and 1180nm designs, loaded quality factors of 2,000 and 4,000 are measured, and intrinsic quality factors of 100,000 and 60,000 are extracted. We also demonstrate an evanescent coupling geometry which decouples the cavity and waveguide-coupling design.