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Mariela Menghini

Mariela Menghini contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Nanoscale self-organisation and metastable non-thermal metallicity in Mott insulators

Mott transitions in real materials are first order and almost always associated with lattice distortions, both features promoting the emergence of nanotextured phases. This nanoscale self-organization creates spatially inhomogeneous regions, which can host and protect transient non-thermal electronic and lattice states triggered by light excitation. Here, we combine time-resolved X-ray microscopy with a Landau-Ginzburg functional approach for calculating the strain and electronic real-space configurations. We investigate V$_2$O$_3$, the archetypal Mott insulator in which nanoscale self-organization already exists in the low-temperature monoclinic phase and strongly affects the transition towards the high-temperature corundum metallic phase. Our joint experimental-theoretical approach uncovers a remarkable out-of-equilibrium phenomenon: the photo-induced stabilisation of the long sought monoclinic metal phase, which is absent at equilibrium and in homogeneous materials, but emerges as a metastable state solely when light excitation is combined with the underlying nanotexture of the monoclinic lattice.

preprint2020arXiv

Temporal dynamics of all-optical switching in hybrid VO2/Si waveguides

Vanadium dioxide (VO2) is one of the most promising materials for developing hybrid photonic integrated devices (PICs). However, despite switching times as low as a few femtoseconds have been reported, the all-optical temporal dynamics of VO2 embedded in a waveguide using an in-plane optical signal remain still hidden. Here, we experimentally investigate this behavior in hybrid VO2/Si waveguides by using pump-probe measurements at telecom wavelengths. Our results show switching times in the micro and nanosecond range, suggesting that the phase transition is triggered thermally from the light absorbed by the VO2 and the temporal response is governed by thermal conductive dynamics. By properly engineering the optical pulse, we prospect switching times of nanoseconds with an energy consumption of a few nanojoules. Our results unveil a new temporal dynamic that would be useful for developing future all-optical VO2 photonic integrated devices.

preprint2015arXiv

Collapse of the low temperature insulating state in Cr-doped V$_2$O$_3$ thin films

We have grown epitaxial Cr-doped V$_2$O$_3$ thin films with Cr concentrations between $0$ and $20\%$ on $(0001)$-Al$_2$O$_3$ by oxygen-assisted molecular beam epitaxy. For the highly doped samples (> $3\%$), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between $1\%$ and $3\%$), a collapse of the insulating state is observed with a reduction of the low temperature resistivity by up to 5 orders of magnitude. A vacuum annealing at high temperature of the films recovers the low temperature insulating state for doping levels below $3\%$ and increases the room temperature resistivity towards the values of Cr-doped V$_2$O$_3$ single crystals. It is well-know that oxygen excess stabilizes a metallic state in V$_2$O$_3$ single crystals. Hence, we propose that Cr doping promotes oxygen excess in our films during deposition leading to the collapse of the low temperature insulating state at low Cr concentrations. These results suggest that slightly Cr-doped V$_2$O$_3$ films can be interesting candidates for field effect devices.