Researcher profile

Jean-Pierre Locquet

Jean-Pierre Locquet contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2022arXiv

Nanoscale self-organisation and metastable non-thermal metallicity in Mott insulators

Mott transitions in real materials are first order and almost always associated with lattice distortions, both features promoting the emergence of nanotextured phases. This nanoscale self-organization creates spatially inhomogeneous regions, which can host and protect transient non-thermal electronic and lattice states triggered by light excitation. Here, we combine time-resolved X-ray microscopy with a Landau-Ginzburg functional approach for calculating the strain and electronic real-space configurations. We investigate V$_2$O$_3$, the archetypal Mott insulator in which nanoscale self-organization already exists in the low-temperature monoclinic phase and strongly affects the transition towards the high-temperature corundum metallic phase. Our joint experimental-theoretical approach uncovers a remarkable out-of-equilibrium phenomenon: the photo-induced stabilisation of the long sought monoclinic metal phase, which is absent at equilibrium and in homogeneous materials, but emerges as a metastable state solely when light excitation is combined with the underlying nanotexture of the monoclinic lattice.

preprint2022arXiv

On the origin of supertetragonality in BaTiO$_3$

Understanding ferroelectricity is of both fundamental and technological importance to further stimulate the development of new materials designs and manipulations. Here, we perform an in-depth first-principle study on the well-known ferroelectric barium titanate BaTiO$_{3}$ under a hydrostatic negative pressure, showing an isosymmetric phase transition to a supertetragonal phase with high $c/a$ ratio of $\sim1.3$. The microscopic origin and driving mechanisms of this phase transition are identified as a drastic change of the covalently $π$-bonded electrons. These findings provide guidance in the search for new supertetragonal phases, with great opportunities for novel multiferroic materials; and can be generalized in the understanding of other isosymmetric phase transitions.

preprint2020arXiv

Temporal dynamics of all-optical switching in hybrid VO2/Si waveguides

Vanadium dioxide (VO2) is one of the most promising materials for developing hybrid photonic integrated devices (PICs). However, despite switching times as low as a few femtoseconds have been reported, the all-optical temporal dynamics of VO2 embedded in a waveguide using an in-plane optical signal remain still hidden. Here, we experimentally investigate this behavior in hybrid VO2/Si waveguides by using pump-probe measurements at telecom wavelengths. Our results show switching times in the micro and nanosecond range, suggesting that the phase transition is triggered thermally from the light absorbed by the VO2 and the temporal response is governed by thermal conductive dynamics. By properly engineering the optical pulse, we prospect switching times of nanoseconds with an energy consumption of a few nanojoules. Our results unveil a new temporal dynamic that would be useful for developing future all-optical VO2 photonic integrated devices.

preprint2015arXiv

An electric-field driven Mott metal-insulator transition in correlated thin films: an inhomogeneous dynamical mean-field theory approach

Simulations are carried out based on the dynamical mean-field theory (DMFT) in order to investigate the properties of correlated thin films for various values of the chemical potential, temperature, interaction strength, and applied transverse electric field. Application of a sufficiently strong field to a thin film at half-filling leads to the appearance of conducting regions near the surfaces of the film, whereas in doped slabs the application of a field leads to a conductivity enhancement on one side of the film and a gradual transition to the insulating state on the opposite side. In addition to the inhomogeneous DMFT, an independent layer approximation (ILA) is considered, in which the properties of each layer are approximated by a homogeneous bulk environment. A comparison between the two approaches reveals that the less expensive ILA results are in good agreement with the DMFT approach, except close to the metal-to-insulator transition points and in the layers immediately at the film surfaces. The hysteretic behavior (memory effect) characteristic of the bulk doping driven Mott transition persists in the slab.

preprint2015arXiv

Collapse of the low temperature insulating state in Cr-doped V$_2$O$_3$ thin films

We have grown epitaxial Cr-doped V$_2$O$_3$ thin films with Cr concentrations between $0$ and $20\%$ on $(0001)$-Al$_2$O$_3$ by oxygen-assisted molecular beam epitaxy. For the highly doped samples (> $3\%$), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between $1\%$ and $3\%$), a collapse of the insulating state is observed with a reduction of the low temperature resistivity by up to 5 orders of magnitude. A vacuum annealing at high temperature of the films recovers the low temperature insulating state for doping levels below $3\%$ and increases the room temperature resistivity towards the values of Cr-doped V$_2$O$_3$ single crystals. It is well-know that oxygen excess stabilizes a metallic state in V$_2$O$_3$ single crystals. Hence, we propose that Cr doping promotes oxygen excess in our films during deposition leading to the collapse of the low temperature insulating state at low Cr concentrations. These results suggest that slightly Cr-doped V$_2$O$_3$ films can be interesting candidates for field effect devices.

preprint2013arXiv

The Continuous-Pole-Expansion method to obtain spectra of electronic lattice models

We present a new algorithm to analytically continue the self-energy of quantum many-body systems from Matsubara frequencies to the real axis. The method allows straightforward, unambiguous computation of electronic spectra for lattice models of strongly correlated systems from self-energy data that has been collected with state-of-the are continuous time solvers within dynamical mean field simulations. Using well-known analytical properties of the self-energy, the analytic continuation is cast into a constrained minimization problem that can be formulated as a quadratic programmable optimization with linear constraints. The algorithm is validated against exactly solvable finite size problems, showing that all features of the spectral function near the Femi level are very well reproduced and coarse features are reproduced for all energies. The method is applied to two well known lattice problems, the two-dimensional Hubbard model at half filling where the momentum dependence of the gap formation is studied, as well as a multi-band model of NiO, for which the spectral function can be directly compared to experiment. Agreement with results published results is very good.

preprint1999arXiv

Normal State Resistivity of Underdoped YBa2Cu3Ox Thin Films and La2-xSrxCuO4 Ultra-Thin Films under Epitaxial Strain

The normal state resistivity of high temperature superconductors can be probed in the region below Tc by suppressing the superconducting state in high magnetic fields. Here we present the normal state properties of YBa2Cu3Ox thin films in the underdoped regime and the normal state resistance of La2-xSrxCuO4 thin films under epitaxial strain, measured below Tc by applying pulsed fields up to 60 T. A universal rho(T) behaviour is reported. We interpret these data in terms of the recently proposed 1D quantum transport model with the 1D paths corresponding to the charge stripes.