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Marcos H. D. Guimaraes

Marcos H. D. Guimaraes contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2024arXiv

Electrostatic Control of Magneto-Optic Excitonic Resonances in the van der Waals Ferromagnetic Semiconductor Cr$_2$Ge$_2$Te$_6$

Two-dimensional magnetic materials exhibit strong magneto-optic effects and high tunability by electrostatic gating, making them very attractive for new magneto-photonic devices. Here, we characterize the magneto-optic Kerr effect (MOKE) spectrum of thin Cr$_2$Ge$_2$Te$_6$ from 1.13 to 2.67 eV, and demonstrate electrostatic control over of its magnetic and magneto-optic properties. The MOKE spectrum exhibits a strong feature around 1.43 eV which we attribute to a magnetic exchange-split excitonic state in Cr$_2$Ge$_2$Te$_6$, in agreement with \textit{ab-initio} calculations. The gate dependence of the MOKE signals shows that the magneto-optical efficiency - rather than the saturation magnetization - is affected by electrostatic gating. We demonstrate a modulation of the magneto-optical strength by over 1 mdeg, with some wavelengths showing a modulation of 65% of the total magneto-optical signals, opening the door for efficient electrical control over light polarization through two-dimensional magnets. Our findings bring forward the fundamental understanding of magneto-optic processes in two-dimensional magnets and are highly relevant for the engineering of devices which exploit excitonic resonances for electrically-tunable magneto-photonic devices.

preprint2020arXiv

The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-dimensional TMDs, and should only be possible if the symmetry of the electronic states is reduced by influences such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors, can provide the high electric fields causing a symmetry breaking in the devices. Here, we investigate the effect of these Schottky contacts on the CPC by characterizing the helicity-dependent photoresponse of monolayer MoSe2 devices both with direct metal-MoSe2 Schottky contacts and with h-BN tunnel barriers at the contacts. We find that, when Schottky barriers are present in the device, additional contributions to CPC become allowed, resulting in emergence of CPC for illumination at normal incidence.

preprint2013arXiv

ZnO UV photodetector with controllable quality factor and photosensitivity

ZnO nanowires have an enormous potential for applications as ultra-violet (UV) photodetectors. Their mechanism of photocurrent generation is intimately related with the presence of surface states where considerable efforts, such as surface chemical modifications, have been pursued to improve their photodetection capabilities. In this work, we report a step further in this direction demonstrating that the photosensitivity and quality factor (Q factor) of the photodetector are entirely tunable by an applied gate voltage. This mechanism enables UV photodetection selectivity ranging from wavelengths from tens of nanometers (full width at half maximum - FWHM) down to a narrow detection of 3 nm. Such control paves the way for novel applications, especially related to the detection of elements that have very sharp luminescence.