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Researcher profile

Caspar H. van der Wal

Caspar H. van der Wal contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-phphysics.opticscond-mat.mtrl-sciphysics.app-ph

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Published work

7 published item(s)

preprint2022arXiv

Broadband single-mode planar waveguides in monolithic 4H-SiC

Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device platforms, it is crucial to consider SiC integrated optics. In recent years many examples of SiC photonic platforms have been shown, like photonic crystal cavities, film-on-insulator waveguides and micro-ring resonators. However, all these examples rely on separating thin films of SiC from substrate wafers. This introduces significant surface roughness, strain and defects in the material, which greatly affects the homogeneity of the optical properties of color centers. Here we present and test a method for fabricating monolithic single-crystal integrated-photonic devices in SiC: tuning optical properties via charge carrier concentration. We fabricated monolithic SiC n-i-n and p-i-n junctions where the intrinsic layer acts as waveguide core, and demonstrate the waveguide functionality for these samples. The propagation losses are below 14 dB/cm. These waveguide types allow for addressing color-centers over a broad wavelength range with low strain-induced inhomogeneity of the optical-transition frequencies. Furthermore, we expect that our findings open the road to fabricating waveguides and devices based on p-i-n junctions, which will allow for integrated electrostatic and radio frequency (RF) control together with high-intensity optical control of defects in silicon carbide.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Electromagnetically induced transparency (EIT) is a phenomenon that can provide strong and robust interfacing between optical signals and quantum coherence of electronic spins. In its archetypical form, mainly explored with atomic media, it uses a (near-)homogeneous ensemble of three-level systems, in which two low-energy spin-1/2 levels are coupled to a common optically excited state. We investigate the implementation of EIT with c-axis divacancy color centers in silicon carbide. While this material has attractive properties for quantum device technologies with near-IR optics, implementing EIT is complicated by the inhomogeneous broadening of the optical transitions throughout the ensemble and the presence of multiple ground-state levels. These may lead to darkening of the ensemble upon resonant optical excitation. Here, we show that EIT can be established with high visibility also in this material platform upon careful design of the measurement geometry. Comparison of our experimental results with a model based on the Lindblad equations indicates that we can create coherences between different sets of two levels all-optically in these systems, with potential impact for RF-free quantum sensing applications. Our work provides an understanding of EIT in multi-level systems with significant inhomogeneities, and our considerations are valid for a wide array of defects in semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Symmetry and Control of Spin-Scattering Processes in Two-Dimensional Transition Metal Dichalcogenides

Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an atomically-thin material, where the light polarization can be used to control the spin and valley degrees-of-freedom for the development of novel opto-spintronic devices. These promising properties emerge due to their large spin-orbit coupling in combination with their crystal symmetries. Here, we provide simple symmetry arguments in a group-theory approach to unveil the symmetry-allowed spin scattering mechanisms, and indicate how one can use these concepts towards an external control of the spin lifetime. We perform this analysis for both monolayer (inversion asymmetric) and bilayer (inversion symmetric) crystals, indicating the different mechanisms that play a role in these systems. We show that, in monolayer TMDs, electrons and holes transform fundamentally differently -- leading to distinct spin-scattering processes. We find that one of the electronic states in the conduction band is partially protected by time-reversal symmetry, indicating a longer spin lifetime for that state. In bilayer and bulk TMDs, a hidden spin-polarization can exist within each layer despite the presence of global inversion symmetry. We show that this feature enables control of the interlayer spin-flipping scattering processes via an out-of-plane electric field, providing a mechanism for electrical control of the spin lifetime.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Detecting chirality in two-terminal electronic devices

Central to spintronics is the interconversion between electronic charge and spin currents, and this can arise from the chirality-induced spin selectivity (CISS) effect. CISS is often studied as magnetoresistance (MR) in two-terminal (2T) electronic devices containing a chiral (molecular) component and a ferromagnet. However, fundamental understanding of when and how this MR can occur is lacking. Here, we uncover an elementary mechanism that generates such a MR for nonlinear response. It requires energy-dependent transport and energy relaxation within the device. The sign of the MR depends on chirality, charge carrier type, and bias direction. Additionally, we reveal how CISS can be detected in the linear response regime in magnet-free 2T devices, either by forming a chirality-based spin-valve using two or more chiral components, or by Hanle spin precession in devices with a single chiral component. Our results provide operation principles and design guidelines for chirality-based spintronic devices and technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Reply to "Comment on 'Spin-dependent electron transmission model for chiral molecules in mesoscopic devices'"

Here we emphasize once more the distinction between generating CISS (spin-charge current conversion) in a chiral system and detecting it as magnetoresistance in two-terminal electronic devices. We also highlight important differences between electrical measurement results obtained in the linear response regime and those obtained in the nonlinear regime.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully understood. In particular, the emergence of CPGE is not compatible with the D3h crystal symmetry of two-dimensional TMDs, and should only be possible if the symmetry of the electronic states is reduced by influences such as an external electric field or mechanical strain. Schottky contacts, nearly ubiquitous in TMD-based transistors, can provide the high electric fields causing a symmetry breaking in the devices. Here, we investigate the effect of these Schottky contacts on the CPC by characterizing the helicity-dependent photoresponse of monolayer MoSe2 devices both with direct metal-MoSe2 Schottky contacts and with h-BN tunnel barriers at the contacts. We find that, when Schottky barriers are present in the device, additional contributions to CPC become allowed, resulting in emergence of CPC for illumination at normal incidence.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Spin-relaxation times exceeding seconds for color centers with strong spin-orbit coupling in SiC

Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin-orbit coupling degrades their spin lifetimes is not clear. We show that a combination of a crystal-field with axial symmetry and spin-orbit coupling leads to a suppression of spin-lattice and spin-spin interactions, resulting in remarkably slow spin relaxation. Our optical measurements on an ensemble of Mo impurities in SiC show a spin lifetime $T_1$ of $2,4$ s at $2$ K.

0 citations0 reviewsNo code linkedOpen access