Researcher profile

Alem-Mar B. Goncalves

Alem-Mar B. Goncalves contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2013arXiv

Screening Charged Impurities and Lifting the Orbital Degeneracy in Graphene by Populating Landau Levels

We report the observation of an isolated charged impurity in graphene and present direct evidence of the close connection between the screening properties of a 2D electron system and the influence of the impurity on its electronic environment. Using scanning tunneling microscopy and Landau level spectroscopy we demonstrate that in the presence of a magnetic field the strength of the impurity can be tuned by controlling the occupation of Landau-level states with a gate-voltage. At low occupation the impurity is screened becoming essentially invisible. Screening diminishes as states are filled until, for fully occupied Landau-levels, the unscreened impurity significantly perturbs the spectrum in its vicinity. In this regime we report the first observation of Landau-level splitting into discrete states due to lifting the orbital degeneracy.

preprint2013arXiv

ZnO UV photodetector with controllable quality factor and photosensitivity

ZnO nanowires have an enormous potential for applications as ultra-violet (UV) photodetectors. Their mechanism of photocurrent generation is intimately related with the presence of surface states where considerable efforts, such as surface chemical modifications, have been pursued to improve their photodetection capabilities. In this work, we report a step further in this direction demonstrating that the photosensitivity and quality factor (Q factor) of the photodetector are entirely tunable by an applied gate voltage. This mechanism enables UV photodetection selectivity ranging from wavelengths from tens of nanometers (full width at half maximum - FWHM) down to a narrow detection of 3 nm. Such control paves the way for novel applications, especially related to the detection of elements that have very sharp luminescence.

preprint2011arXiv

Flame Synthesis of Graphene Films in Open Environments

Few-layer graphene (FLG) is grown on copper and nickel substrates at high rates using a novel flame synthesis method in open-atmosphere environments. Transmittance and resistance properties of the transferred films are similar to those grown by other methods, but the concentration of oxygen, as assessed by XPS, is actually less than that for CVD-grown graphene under near vacuum conditions. The method involves utilizing a multi-element inverse-diffusion-flame burner, where post-flame species and temperatures are radially-uniform upon deposition at a substrate. Advantages of the flame synthesis method are scalability for large-area surface coverage, increased growth rates, high purity and yield, continuous processing, and reduced costs due to efficient use of fuel as both heat source and reagent. Additionally, by adjusting local growth conditions, other carbon nanostructures (i.e. nanotubes) are readily synthesized.