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Marco Grioni

Marco Grioni appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.other

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Published work

14 published item(s)

preprint2016arXiv

A Novel Quasi-One-Dimensional Topological Insulator in Bismuth Iodide $β$-Bi$_4$I$_4$

Recent progress in the field of topological states of matter(1,2) has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs)(3-6), followed by closely related ternary compounds(7-16) and predictions of several weak TIs(17-19). However, both the conceptual richness of Z$_2$ classification of TIs as well as their structural and compositional diversity are far from being fully exploited. Here, a new Z$_2$ topological insulator is theoretically predicted and experimentally confirmed in the $β$-phase of quasi-one-dimensional bismuth iodide Bi$_4$I$_4$. The electronic structure of $β$-Bi$_4$I$_4$, characterized by Z$_2$ invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Our angle-resolved photoemission spectroscopy measurements on the (001) surface reveal a highly anisotropic band-crossing feature located at the point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Tunable Carrier Multiplication and Cooling in Graphene

Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly ($n$-)doped graphene, we observe larger carrier multiplication factors ($>$ 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less ($p$-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphene's dynamical response to a photoexcitation.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ultrafast Electron Dynamics in Epitaxial Graphene Investigated with Time- and Angle-Resolved Photoemission Spectroscopy

In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphene supported on silicon carbide (semiconducting) and iridium (metallic) substrates using ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) based on high harmonic generation. For the semiconducting substrate we reveal a complex hot carrier dynamics that manifests itself in an elevated electronic temperature and an increase in linewidth of the $π$ band. By analyzing these effects we are able to disentangle electron relaxation channels in graphene. On the metal substrate this hot carrier dynamics is found to be severely perturbed by the presence of the metal, and we find that the electronic system is much harder to heat up than on the semiconductor due to screening of the laser field by the metal.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS$_2$

The dynamics of excited electrons and holes in single layer (SL) MoS$_2$ have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS$_2$ on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS$_2$. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.

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preprint2015arXiv

Ramifications of Optical Pumping on the Interpretation of Time-Resolved Photoemission Experiments on Graphene

In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system. These processes can severely affect a correct interpretation of the data by masking the out-of-equilibrium electron dynamics intrinsic to the sample. In this study, we show that such effects indeed influence TR-ARPES data of graphene on a silicon carbide (SiC) substrate. In particular, we find a time- and laser fluence-dependent spectral shift and broadening of the acquired spectra, and unambiguously show the presence of a double pump excitation. The dynamics of these effects is slower than the electron dynamics in the graphene sample, thereby permitting us to deconvolve the signals in the time domain. Our results demonstrate that complex pump-related processes should always be considered in the experimental setup and data analysis.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Extracting the Temperature of Hot Carriers in Time- and Angle-Resolved Photoemission

The interaction of light with a material's electronic system creates an out-of-equilibrium (non-thermal) distribution of optically excited electrons. Non-equilibrium dynamics relaxes this distribution on an ultrafast timescale to a hot Fermi-Dirac distribution with a well-defined temperature. The advent of time- and angle-resolved photoemission spectroscopy (TR-ARPES) experiments has made it possible to track the decay of the temperature of the excited hot electrons in selected states in the Brillouin zone, and to reveal their cooling in unprecedented detail in a variety of emerging materials. It is, however, not a straightforward task to determine the temperature with high accuracy. This is mainly attributable to an a priori unknown position of the Fermi level and the fact that the shape of the Fermi edge can be severely perturbed when the state in question is crossing the Fermi energy. Here, we introduce a method that circumvents these difficulties and accurately extracts both the temperature and the position of the Fermi level for a hot carrier distribution by tracking the occupation statistics of the carriers measured in a TR-ARPES experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene

Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by topological in-gap states, or that the electronic structure could be altogether changed by many-body effects. Here we directly follow the excited carriers in bilayer graphene on a femtosecond time scale, using ultrafast time- and angle-resolved photoemission. We find a behavior consistent with a single-particle band gap. Compared to monolayer graphene, the existence of this band gap leads to an increased carrier lifetime in the minimum of the lowest conduction band. This is in sharp contrast to the second sub-state of the conduction band, in which the excited electrons decay through fast, phonon-assisted inter-band transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Combined large spin-splitting and one dimensional confinement in surface alloys

We have found and characterized by angle-resolved photoelectron spectroscopy (ARPES) quasi-one dimensional spin-split states in chain-like surface alloys formed by large Z elements (Bi and Pb) at the Cu(110) surface. The ARPES results are supported by first-principles relativistic calculations, which also confirm the spin polarization of these states, characteristic of the Rashba-Bychkov effect. The Fermi surface contours are open, but warped, as a result of the interaction with the bulk Cu conduction band. This interaction introduces a k dependence of the spin splitting perpendicular to the chains direction. We have also investigated the influence of the atomic spin-orbit parameter in substitutional isostructural Bi_{1-x}Pb_{x} overlayers, and found that the magnitude of the spin splitting can be continuously tuned as a function of stoichiometry.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Direct view on the ultrafast carrier dynamics in graphene

The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance, is only possible if these pairs can be separated before they lose energy to vibrations, merely heating the lattice. While the hot carrier dynamics in graphene could so far only be accessed indirectly, we here present a direct time-resolved view on the Dirac cone by angle-resolved photoemission (ARPES). This allows us to show the quasi-instant thermalisation of the electron gas to a temperature of more than 2000 K; to determine the time-resolved carrier density; to disentangle the subsequent decay into excitations of optical phonons and acoustic phonons (directly and via supercollisions); and to show how the presence of the hot carrier distribution affects the lifetime of the states far below the Fermi energy.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Two Distinct Phases of Bilayer Graphene Films on Ru(0001)

By combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy we reveal the structural and electronic properties of multilayer graphene on Ru(0001). We prove that large ethylene exposure allows to synthesize two distinct phases of bilayer graphene with different properties. The first phase has Bernal AB stacking with respect to the first graphene layer, displays weak vertical interaction and electron doping. The long-range ordered moiré pattern modulates the crystal potential and induces replicas of the Dirac cone and minigaps. The second phase has AA stacking sequence with respect to the first layer, displays weak structural and electronic modulation and p-doping. The linearly dispersing Dirac state reveals the nearly-freestanding character of this novel second layer phase.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Anisotropic spin gaps in BiAg$_2$-Ag/Si(111)

We present a detailed analysis of the band structure of the BiAg$_2$/Ag/Si(111) trilayer system by means of high resolution Angle Resolved Photoemission Spectroscopy (ARPES). BiAg2/Ag/Si(111) exhibits a complex spin polarized electronic structure due to giant spin-orbit interactions. We show that a complete set of constant energy ARPES maps, supplemented by a modified nearly free electron calculation, provides a unique insight into the structure of the spin polarized bands and spin gaps. We also show that the complex gap structure can be continuously tuned in energy by a controlled deposition of an alkali metal.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ag-coverage-dependent symmetry of the electronic states of the Pt(111)-Ag-Bi interface: The ARPES view of a structural transition

We studied by angle-resolved photoelectron spectroscopy the strain-related structural transition from a pseudomorphic monolayer (ML) to a striped incommensurate phase in an Ag thin film grown on Pt(111). We exploited the surfactant properties of Bi to grow ordered Pt(111)-xMLAg-Bi trilayers with 0 < x < 5 ML, and monitored the dispersion of the Bi-derived interface states to probe the structure of the underlying Ag film. We find that their symmetry changes from threefold to sixfold and back to threefold in the Ag coverage range studied. Together with previous scanning tunneling microscopy and photoelectron diffraction data, these results provide a consistent microscopic description of the coverage-dependent structural transition.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Anisotropy effects on Rashba and topological insulator spin polarized surface states: a unified phenomenological description

Spin polarized two-dimensional electronic states have been previously observed on metallic surface alloys with giant Rashba splitting and on the surface of topological insulators. We study the surface band structure of these systems, in a unified manner, by exploiting recent results of k.p theory. The model suggests a different way to address the effect of anisotropy in Rashba systems. Changes in the surface band structure of various Rashba compounds can be captured by a single effective parameter which quantifies the competition between the Rashba effect and the hexagonal warping of the constant energy contours. The same model provides a unified phenomenological description of the surface states belonging to materials with topologically trivial and non-trivial band structures.

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preprint2010arXiv

A band structure scenario for the giant spin-orbit splitting observed at the Bi/Si(111) interface

The Bi/Si(111) (sqrt{3} x sqrt{3})R30 trimer phase offers a prime example of a giant spin-orbit splitting of the electronic states at the interface with a semiconducting substrate. We have performed a detailed angle-resolved photoemission (ARPES) study to clarify the complex topology of the hybrid interface bands. The analysis of the ARPES data, guided by a model tight-binding calculation, reveals a previously unexplored mechanism at the origin of the giant spin-orbit splitting, which relies primarily on the underlying band structure. We anticipate that other similar interfaces characterized by trimer structures could also exhibit a large effect.

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