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Hsiao-Yi Chen

Hsiao-Yi Chen contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Dark Matter Direct Detection in Materials with Spin-Orbit Coupling

Semiconductors with $\mathcal{O}(\text{meV})$ band gaps have been shown to be promising targets to search for sub-MeV mass dark matter (DM). In this paper we focus on a class of materials where such narrow band gaps arise naturally as a consequence of spin-orbit coupling (SOC). Specifically, we are interested in computing DM-electron scattering and absorption rates in these materials using state-of-the-art density functional theory (DFT) techniques. To do this, we extend the DM interaction rate calculation to include SOC effects which necessitates a generalization to spin-dependent wave functions. We apply our new formalism to calculate limits for several DM benchmark models using an example ZrTe$_{5}$ target and show that the inclusion of SOC can substantially alter projected constraints.

preprint2022arXiv

Development of $ab ~initio$ method for exciton condensation and its application to $\bf TiSe_2$

Exciton condensation indicating the spontaneous formation of electron-hole pair can cause the phase transition from a semimetal to an excitonic insulator by gap opening at the Fermi surface. While the idea of this excitonic insulator has been proposed for decades, current theoretical approaches can only provide qualitative descriptions, and a quantitative predicting tool is still missing. To shed insight on this problem, we developed an $ab~initio$ method based on the finite-temperature density functional theory and many-body perturbation theory to compute the exciton condensation critical behavior. Applying our approach to the monolayer $\rm TiSe_2$, we find a lattice distortion accompanied by the formation of the excitonic gap via electron-phonon coupling without phonon softening, proving that the exciton condensation is the origin of the charge-density-wave state observed in this compound. Overall, the methodology introduced in this work is general and paves the way to searching for candidate excitonic insulators in natural material systems.

preprint2020arXiv

Exciton-Phonon Interaction and Relaxation Times from First Principles

Electron-phonon ($e$-ph) interactions are key to understanding the dynamics of electrons in materials, and can be modeled accurately from first-principles. However, when electrons and holes form Coulomb-bound states (excitons), quantifying their interactions and scattering processes with phonons remains an open challenge. Here we show a rigorous approach for computing exciton-phonon (ex-ph) interactions and the associated exciton dynamical processes from first principles. Starting from the ab initio Bethe-Salpeter equation, we derive expressions for the ex-ph matrix elements and relaxation times. We apply our method to bulk hexagonal boron nitride, for which we map the ex-ph relaxation times as a function of exciton momentum and energy, analyze the temperature and phonon-mode dependence of the ex-ph scattering processes, and accurately predict the phonon-assisted photoluminescence. The approach introduced in this work is general and provides a framework for investigating exciton dynamics in a wide range of materials.

preprint2020arXiv

Precise Radiative Lifetimes in Bulk Crystals from First Principles: The Case of Wurtzite GaN

Gallium nitride (GaN) is a key semiconductor for solid-state lighting, but its radiative processes are not fully understood. Here we show a first-principles approach to accurately compute the radiative lifetimes in bulk uniaxial crystals, focusing on wurtzite GaN. Our computed radiative lifetimes are in very good agreement with experiment up to 100 K. We show that taking into account excitons (through the Bethe-Salpeter equation) and spin-orbit coupling to include the exciton fine structure is essential for computing accurate radiative lifetimes. A model for exciton dissociation into free carriers allows us to compute the radiative lifetimes up to room temperature. Our work enables precise radiative lifetime calculations in III-nitrides and other anisotropic solid-state emitters.