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Majid Ahmadi

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Published work

11 published item(s)

preprint2026arXiv

Unexpected Anisotropic Mn-Sb Anti-site Distribution and Van der Waals Epitaxy of MnSb2Te4

Mn-Sb site mixing directly impacts both the magnetic and topological properties of MnSb2Te4. This study reveals, unlike previously believed, that these anti-sites can be unevenly distributed within the crystal. To that end, a polycrystalline sample was created with a two-step synthesis using MnTe and Sb2Te3 as precursors. DC-SQUID magnetometry was used to confirm its magnetic properties. In addition, the use of High-Resolution Scanning Transmission Electron Microscopy combined with Energy-Dispersive X-ray Spectroscopy allowed us to identify the presence of an inversion-breaking asymmetry in the anti-site distribution. This reduced-symmetry structure bears resemblance to the recently proposed class of Janus materials and thus warrants further exploration due to its potential for combining topology and magnetism with other effects, such as non-linear optics and piezoelectricity. Finally, to further elucidate the interplay between site mixing, doping, topology, and magnetism, a method for growing MnSb2Te4 thin films over amorphous SiOx using Sb2Te3 seeds is introduced. The successful Van der Waals epitaxy of MnSb2Te4 over Sb2Te3 seeds using Pulsed Laser Deposition is confirmed using Scanning Transmission Electron Microscopy. This represents a crucial step in incorporating these materials into a Si-based architecture, which offers the possibility of controlling the Fermi lever via gating.

preprint2023arXiv

Memristive Memory Enhancement by Device Miniaturization for Neuromorphic Computing

The areal footprint of memristors is a key consideration in material-based neuromorophic computing and large-scale architecture integration. Electronic transport in the most widely investigated memristive devices is mediated by filaments, posing a challenge to their scalability in architecture implementation. Here we present a compelling alternative memristive device and demonstrate that areal downscaling leads to enhancement in memristive memory window, while maintaining analogue behavior, contrary to expectations. Our device designs directly integrated on semiconducting Nb-SrTiO$_3$ allows leveraging electric field effects at edges, increasing the dynamic range in smaller devices. Our findings are substantiated by studying the microscopic nature of switching using scanning transmission electron microscopy, in different resistive states, revealing an interfacial layer whose physical extent is influenced by applied electric fields. The ability of Nb-SrTiO$_3$ memristors to satisfy hardware and software requirements with downscaling, while significantly enhancing memristive functionalities, makes them strong contenders for non-von Neumann computing, beyond CMOS.

preprint2022arXiv

Self-assembled neuromorphic networks at self-organized criticality in Ag-hBN platform

Networks and systems which exhibit brain-like behavior can analyze information from intrinsically noisy and unstructured data with very low power consumption. Such characteristics arise due to the critical nature and complex interconnectivity of the brain and its neuronal network. We demonstrate that a system comprising of multilayer hexagonal Boron Nitride (hBN) films contacted with Silver (Ag), that can uniquely host two different self-assembled networks, which are self-organized at criticality (SOC). This system shows bipolar resistive switching between high resistance (HRS) and low resistance states (LRS). In the HRS, Ag clusters (nodes) intercalate in the van der Waals gaps of hBN forming a network of tunnel junctions, whereas the LRS contains a network of Ag filaments. The temporal avalanche dynamics in both these states exhibit power-law scaling, long-range temporal correlation, and SOC. These networks can be tuned from one to another with voltage as a control parameter. For the first time, different neuron-like networks are realized in a single CMOS compatible, 2D materials platform.

preprint2015arXiv

Optimized Implementation of Memristor-Based Full Adder by Material Implication Logic

Recently memristor-based applications and circuits are receiving an increased attention. Furthermore, memristors are also applied in logic circuit design. Material implication logic is one of the main areas with memristors. In this paper an optimized memristor-based full adder design by material implication logic is presented. This design needs 27 memristors and less area in comparison with typical CMOS-based 8-bit full adders. Also the presented full adder needs only 184 computational steps which enhance former full adder design speed by 20 percent.

preprint2014arXiv

Surface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS2

MoS2 is one of the important members of transition metal dichalogenides which is emerging as a potential 2D atomically thin layered material for low power electronic and opto-electronic applications. However, for MoS2 a critical fundamental question of significant importance is how the surface energy and hence the wettability is altered in nanoscale -- in particular, the role of crystal quality in low dimensions. Present work reports the synthesis of large area MoS2 films on insulating substrates with different surface morphology via vapor phase deposition by varying the growth temperatures. The crystallinity of the samples is examined by transmission electron microscopy and Raman spectroscopy. From contact angle measurements, it is possible to correlate the wettability with crystallinity at nanoscale. The specific surface energy for few layers thick MoS2 is estimated to be around 46.5 mJ/m2. Our results shed light on the MoS2-water interaction which is significant for developing important devices based on MoS2 coated surfaces for micro-fluidic applications.

preprint2014arXiv

Synthesis and Characterization of Tungstite (WO3.H2O) Nanoleaves and Nanoribbons

An environmentally benign method capable of producing large quantities of materials was used to synthesize tungstite (WO3.H2O) leaf-shaped nanoplatelets (LNPs) and nanoribbons (NRs). These materials were simply obtained by aging of colloidal solutions prepared by adding hydrochloric acid (HCl) to dilute sodium tungstate solutions (Na2WO4.2H2O) at a temperature of 5-10oC. The aging medium and the pH of the precursor solutions were also investigated. Crystallization and growth occurred by Ostwald ripening during the aging of the colloidal solutions at ambient temperature for 24 to 48hrs. When dispersed in water, the LNPs and NRs take many days to settle, which is a clear advantage for some applications (e.g., photocatalysis). The materials were characterized using scanning and transmission electron microscopy, Raman and UV/Vis spectroscopies. The current versus voltage characteristics of the tungstite NRs showed that the material behaved as a Schottky diode with a breakdown electric field of 3.0x105V.m-1. They can also be heat treated at relatively low temperatures (300oC) to form tungsten oxide (WO3) NRs and be used as photoanodes for photoelectrochemical water splitting.

preprint2014arXiv

Temperature dependent Raman study of phonons of different symmetries in single crystal Bi2Se3

High quality single crystals of Bi2Se3 were grown using a modified Bridgman technique, the detailed study were carried out using Raman spectroscopy and characterized by Laue diffraction and high resolution transmission electron microscopy. Polarized Raman scattering measurements were also carried out, and both the A1g and A2g phonon modes showed strong polarization effect, which is consistent with the theoretical prediction. The temperature dependent study (in the temperature range 83 K to 523 K of Raman active modes were reported and observed to follow a systematic red shift. The frequency of these phonon modes are found to vary linearly with temperature and can be explained by first order temperature co-efficient. The temperature co-efficient for A11g, E2g and A21g modes were estimated to be -1.44*10-2, -1.94*10-2 and -1.95*10-2cm-1/K respectively.

preprint2013arXiv

Optical Properties and Raman Studies of Partially Edge Terminated Vertically Aligned Nanocrystalline MoS2 Thin Film

The optical and vibrational properties of nanocrystalline thin films of MoS2, comprised of a mixture of edge terminated vertically aligned (ETVA) and (001)-oriented regions, on large insulating substrates are reported. From high resolution transmission electron microscopy (HRTEM), the average size of ETVA nanocrystals were ~5 nm and each nanocrystal consisted of only 3 to 5 monolayers of MoS2. The films were highly transparent (~80%) but the percent of transmittance decreased as the energy of the incident light approached to the band gap. Additionally, weak excitonic peaks were observed both in the absorption and transmission spectra. The room temperature Raman study showed that both the E12g and A1g modes were significantly broader, and a few additional Raman modes were observed when compared to bulk MoS2. The broadening of the A1g mode was analyzed using the phonon-confinement model and the calculated particle size was in good agreement with TEM observations. Moreover, the temperature coefficient of the A1g mode was estimated from the temperature dependent Raman studies.

preprint2013arXiv

Temperature Dependent Raman Studies and Thermal Conductivity of Few Layer MoS2

We report on the temperature dependence of in-plane E2g and out of plane A1g Raman modes in high quality few layers MoS2 (FLMS) prepared using a high temperature vapor-phase method. The materials obtained were investigated using transmission electron microscopy. The frequencies of these two phonon modes were found to vary linearly with temperature. The first order temperature coefficients for E2g and A1g modes were found to be 1.32*10-2 and 1.23*10-2 cm-1/K, respectively. The thermal conductivity of the suspended FLMS at room temperature was estimated to be about 52 W/mK.

preprint2012arXiv

An Amendment of Fast Subspace Tracking Methods

Tuning stepsize between convergence rate and steady state error level or stability is a problem in some subspace tracking schemes. Methods in DPM and OJA class may show sparks in their steady state error sometimes, even with a rather small stepsize. By a study on the schemes' updating formula, it is found that the update only happens in a specific plane but not all the subspace basis. Through an analysis on relationship between the vectors in that plane, an amendment as needed is made on the algorithm routine to fix the problem by constricting the stepsize at every update step. The simulation confirms elimination of the sparks.

preprint2010arXiv

An Efficient Automatic Mass Classification Method In Digitized Mammograms Using Artificial Neural Network

In this paper we present an efficient computer aided mass classification method in digitized mammograms using Artificial Neural Network (ANN), which performs benign-malignant classification on region of interest (ROI) that contains mass. One of the major mammographic characteristics for mass classification is texture. ANN exploits this important factor to classify the mass into benign or malignant. The statistical textural features used in characterizing the masses are mean, standard deviation, entropy, skewness, kurtosis and uniformity. The main aim of the method is to increase the effectiveness and efficiency of the classification process in an objective manner to reduce the numbers of false-positive of malignancies. Three layers artificial neural network (ANN) with seven features was proposed for classifying the marked regions into benign and malignant and 90.91% sensitivity and 83.87% specificity is achieved that is very much promising compare to the radiologist's sensitivity 75%.