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Maxime J-F Guinel

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Published work

5 published item(s)

preprint2014arXiv

Surface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS2

MoS2 is one of the important members of transition metal dichalogenides which is emerging as a potential 2D atomically thin layered material for low power electronic and opto-electronic applications. However, for MoS2 a critical fundamental question of significant importance is how the surface energy and hence the wettability is altered in nanoscale -- in particular, the role of crystal quality in low dimensions. Present work reports the synthesis of large area MoS2 films on insulating substrates with different surface morphology via vapor phase deposition by varying the growth temperatures. The crystallinity of the samples is examined by transmission electron microscopy and Raman spectroscopy. From contact angle measurements, it is possible to correlate the wettability with crystallinity at nanoscale. The specific surface energy for few layers thick MoS2 is estimated to be around 46.5 mJ/m2. Our results shed light on the MoS2-water interaction which is significant for developing important devices based on MoS2 coated surfaces for micro-fluidic applications.

preprint2014arXiv

Synthesis and Characterization of Tungstite (WO3.H2O) Nanoleaves and Nanoribbons

An environmentally benign method capable of producing large quantities of materials was used to synthesize tungstite (WO3.H2O) leaf-shaped nanoplatelets (LNPs) and nanoribbons (NRs). These materials were simply obtained by aging of colloidal solutions prepared by adding hydrochloric acid (HCl) to dilute sodium tungstate solutions (Na2WO4.2H2O) at a temperature of 5-10oC. The aging medium and the pH of the precursor solutions were also investigated. Crystallization and growth occurred by Ostwald ripening during the aging of the colloidal solutions at ambient temperature for 24 to 48hrs. When dispersed in water, the LNPs and NRs take many days to settle, which is a clear advantage for some applications (e.g., photocatalysis). The materials were characterized using scanning and transmission electron microscopy, Raman and UV/Vis spectroscopies. The current versus voltage characteristics of the tungstite NRs showed that the material behaved as a Schottky diode with a breakdown electric field of 3.0x105V.m-1. They can also be heat treated at relatively low temperatures (300oC) to form tungsten oxide (WO3) NRs and be used as photoanodes for photoelectrochemical water splitting.

preprint2014arXiv

Temperature dependent Raman study of phonons of different symmetries in single crystal Bi2Se3

High quality single crystals of Bi2Se3 were grown using a modified Bridgman technique, the detailed study were carried out using Raman spectroscopy and characterized by Laue diffraction and high resolution transmission electron microscopy. Polarized Raman scattering measurements were also carried out, and both the A1g and A2g phonon modes showed strong polarization effect, which is consistent with the theoretical prediction. The temperature dependent study (in the temperature range 83 K to 523 K of Raman active modes were reported and observed to follow a systematic red shift. The frequency of these phonon modes are found to vary linearly with temperature and can be explained by first order temperature co-efficient. The temperature co-efficient for A11g, E2g and A21g modes were estimated to be -1.44*10-2, -1.94*10-2 and -1.95*10-2cm-1/K respectively.

preprint2013arXiv

Optical Properties and Raman Studies of Partially Edge Terminated Vertically Aligned Nanocrystalline MoS2 Thin Film

The optical and vibrational properties of nanocrystalline thin films of MoS2, comprised of a mixture of edge terminated vertically aligned (ETVA) and (001)-oriented regions, on large insulating substrates are reported. From high resolution transmission electron microscopy (HRTEM), the average size of ETVA nanocrystals were ~5 nm and each nanocrystal consisted of only 3 to 5 monolayers of MoS2. The films were highly transparent (~80%) but the percent of transmittance decreased as the energy of the incident light approached to the band gap. Additionally, weak excitonic peaks were observed both in the absorption and transmission spectra. The room temperature Raman study showed that both the E12g and A1g modes were significantly broader, and a few additional Raman modes were observed when compared to bulk MoS2. The broadening of the A1g mode was analyzed using the phonon-confinement model and the calculated particle size was in good agreement with TEM observations. Moreover, the temperature coefficient of the A1g mode was estimated from the temperature dependent Raman studies.

preprint2013arXiv

Temperature Dependent Raman Studies and Thermal Conductivity of Few Layer MoS2

We report on the temperature dependence of in-plane E2g and out of plane A1g Raman modes in high quality few layers MoS2 (FLMS) prepared using a high temperature vapor-phase method. The materials obtained were investigated using transmission electron microscopy. The frequencies of these two phonon modes were found to vary linearly with temperature. The first order temperature coefficients for E2g and A1g modes were found to be 1.32*10-2 and 1.23*10-2 cm-1/K, respectively. The thermal conductivity of the suspended FLMS at room temperature was estimated to be about 52 W/mK.