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Researcher profile

M. Y. Li

M. Y. Li contributes to research discovery and scholarly infrastructure.

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cond-mat.supr-concond-mat.str-el

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Published work

4 published item(s)

preprint2015arXiv

Tuning the electronic structure of Sr2IrO4 thin films by bulk electronic doping using molecular beam epitaxy

By means of oxide molecular beam epitaxy with shutter-growth mode, we have fabricated a series of electron-doped (Sr1-xLax)2IrO4(001)(x = 0, 0.05, 0.1 and 0.15) single crystalline thin films and then investigated the doping dependence of electronic structure utilizing in-situ angle-resolved photoemission spectroscopy. We find that with increasing doping proportion, the Fermi levels of samples progressively shift upward. Prominently, an extra electron pocket crossing the Fermi level around the M point has been evidently observed in 15 % nominal doping sample. Moreover, bulk-sensitive transport measurements confirm that doping effectively suppresses the insulating state with respect to the as-grown Sr2IrO4, though doped samples still remain insulating at low temperatures due to the localization effect possibly stemming from disorders including oxygen deficiencies. Our work provides another feasible doping method to tune electronic structure of Sr2IrO4.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Significant contribution of As 4p orbitals to the low-lying electronic structure of 112-type iron-based superconductor Ca0.9La0.1FeAs2

We report a systematic polarization-dependent angle-resolved photoemission spectroscopy study of the three-dimensional electronic structure of the recently discovered 112-type iron-based superconductor Ca1-xLaxFeAs2 (x = 0.1). Besides the commonly reported three hole-like and two electron-like bands in iron-based superconductors, we resolve one additional hole-like band around the zone center and one more fast-dispersing band near the X point in the vicinity of Fermi level. By tuning the polarization and the energy of incident photons,we are able to identify the specific orbital characters and the kz dependence of all bands. Combining with band calculations, we find As 4pz and 4px (4py) orbitals contribute significantly to the additional three-dimensional hole-like band and the narrow band, respectively. Also, there are considerable hybridization between the As 4p zand Fe 3d orbitals in the additional hole-like band, which suggests the strong coupling between the unique arsenic zigzag bond layers and the FeAs layers therein. Our findings provide a comprehensive picture of the orbital characters of the low-lying band structure of 112-type iron-based superconductors, which can be a starting point for the further understanding of their unconventional superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Hot-spot formation in stacks of intrinsic Josephson junctions in Bi2Sr2CaCu2O8

We have studied experimentally and numerically temperature profiles and the formation of hot spots in intrinsic Josephson junction stacks in Bi2Sr2CaCu2O8 (BSCCO). The superconducting stacks are biased in a state where all junctions are resistive. The formation of hot spots in this system is shown to arise mainly from the strongly negative temperature coefficient of the c-axis resistivity of BSCCO at low temperatures. This leads to situations where the maximum temperature in the hot spot can be below or above the superconducting transition temperature Tc. The numerical simulations are in good agreement with the experimental observations.

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preprint2013arXiv

Modeling the linewidth dependence of coherent terahertz emission from intrinsic Josephson junction stacks in the hot-spot regime

Recently it has been found that, when operated at large input power, the linewidth of terahertz radiation emitted from intrinsic Josephson junction stacks can be as narrow as some megahertz. In this high-bias regime a hot spot coexists with regions which are still superconducting. Surprisingly, the linewidth was found to decrease with increasing bath temperature. We present a simple model describing the dynamics of the stack in the presence of a hot spot by two parallel arrays of pointlike Josephson junctions and an additional shunt resistor in parallel. Heat diffusion is taken into account by thermally coupling all elements to a bath at temperature T_b. We present current-voltage characteristics of the coupled system and calculations of the linewidth of the radiation as a function of T_b. In the presence of a spatial gradient of the junction parameters critical current and resistance, the linewidth deceases with increasing T_b, similar to the experimental observation.

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