Researcher profile

H. F. Yang

H. F. Yang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Hybridization and Correlation between f- and d-orbital electrons in a valence fluctuating compound EuNi2P2

The interaction between localized f and itinerant conduction electrons is crucial in the electronic properties of heavy fermion and valence fluctuating compounds. Using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structure of the archetypical valence fluctuating compound EuNi2P2 that hosts multiple f electrons. At low temperatures, we reveal the hybridization between Eu 4f and Ni 3d states, which contributes to the electron mass enhancement, consistent with the periodic Anderson model. With increasing temperature, interestingly, we observe opposite temperature evolution of electron spectral function above and below the Kondo coherence temperature near 110 K, which is in contrast to the monotonic valence change and beyond the expectation of the periodic Anderson model. We argue that both f-d hybridization and correlation are imperative in the electronic properties of EuNi2P2. Our results shed light on the understanding of novel properties, such as heavy fermion behaviors and valence fluctuation, of rare-earth transition-metal intermetallic compounds with multiple f electrons.

preprint2022arXiv

Observation of non-trivial topological electronic structure of orthorhombic SnSe

Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interests due to its superior thermoelectric performance. However, it's topological nature has long been ignored. In this work, by combining synchrotron-based angle-resolved photoemission spectroscopy and ab-initio calculations, we systematically investigated the topological electronic structure of orthorhombic SnSe. By identifying the continuous gap in the valence bands due to the band inversion and the topological surface states on its (001) surface, we establish SnSe as a strong topological insulator. Furthermore, we studied the evolution of the topological electronic structure and propose the topological phase diagram in SnSe1-xTex. Our work reveals the topological non-trivial nature of SnSe and provides new understandings of its intriguing transport properties.