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Researcher profile

M. Vladimirova

M. Vladimirova contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.quant-gasphysics.optics

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Published work

12 published item(s)

preprint2022arXiv

Electrical control of excitons in GaN/(Al,Ga)N quantum wells

A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the heterostructure. By jointly measuring spatially-resolved photoluminescence and photo-induced current, we demonstrate that exciton density in the trap can be controlled via an external electric bias, which is capable of altering the trap depth. Application of a negative bias deepens the trapping potential, but does not lead to any additional accumulation of excitons in the trap. This is due to exciton dissociation instigated by the lateral electric field at the electrode edges. The resulting carrier losses are detected as an increased photo-current and reduced photoluminescence intensity. By contrast, application of a positive bias washes out the electrode-induced trapping potential. Thus, excitons get released from the trap and recover free propagation in the plane that we reveal by spatially-resolved photoluminescence.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Complexity of dipolar exciton Mott transition in GaN/(AlGa)N nanostructures

The Mott transition from a dipolar excitonic liquid to an electron-hole plasma is demonstrated in a wide GaN/(Al,Ga)N quantum well at $T=7$K by means of spatially-resolved magneto-photoluminescence spectroscopy. Increasing optical excitation density we drive the system from the excitonic state, characterized by a diamagnetic behavior and thus a quadratic energy dependence on the magnetic field, to the unbound electron-hole state, characterized by a linear shift of the emission energy with the magnetic field. The complexity of the system requires to take into account both the density-dependence of the exciton binding energy and the exciton-exciton interaction and correlation energy that are of the same order of magnitude. We estimate the carrier density at Mott transition as $n_\mathrm{Mott}\approx 2\times 10^{11}$cm$^{-2}$ and address the role played by excitonic correlations in this process. Our results strongly rely on the spatial resolution of the photoluminescence and the assessment of the carrier transport. We show, that in contrast to GaAs/(Al,Ga)As systems, where transport of dipolar magnetoexcitons is strongly quenched by the magnetic field due to exciton mass enhancement, in GaN/(Al,Ga)N the band parameters are such that the transport is preserved up to $9$T.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Influence of magnetic quantum confined Stark effect on the spin lifetime of indirect excitons

We report on the unusual and counter-intuitive behaviour of spin lifetime of excitons in coupled semiconductor quantum wells (CQWs) in the presence of in-plane magnetic field. Instead of conventional acceleration of spin relaxation due to the Larmor precession of electron and hole spins we observe a strong increase of the spin relaxation time at low magnetic fields followed by saturation and decrease at higher fields. We argue that this non-monotonic spin relaxation dynamics is a fingerprint of the magnetic quantum confined Stark effect. In the presence of electric field along the CQW growth axis, an applied magnetic field efficiently suppresses the exciton spin coherence, due to inhomogeneous broadening of the $g$-factor distribution.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nuclear spin warm-up in bulk n-GaAs

We show that the spin-lattice relaxation in n-type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, that cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, that governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping can be studied and harnessed in much simpler model environment of n-GaAs bulk crystal.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Room-temperature transport of indirect excitons in (Al,Ga)N/GaN quantum wells

We report on the exciton propagation in polar (Al,Ga)N/GaN quantum wells over several micrometers and up to room temperature. The key ingredient to achieve this result is the crystalline quality of GaN quantum wells (QWs) grown on GaN template substrate. By comparing microphotoluminescence images of two identical QWs grown on sapphire and on GaN, we reveal the twofold role played by GaN substrate in the transport of excitons. First, the lower threading dislocation densities in such structures yield higher exciton radiative efficiency, thus limiting nonradiative losses of propagating excitons. Second, the absence of the dielectric mismatch between the substrate and the epilayer strongly limits the photon guiding effect in the plane of the structure,making exciton transport easier to distinguish from photon propagation. Our results pave the way towards room-temperature gate-controlled exciton transport in wide-bandgap polar heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Single-shot measurement of transient nuclear magnetization with spin-noise spectroscopy in n-GaAs microcavities

We exploit spin noise spectroscopy (SNS) to directly observe build-up of dynamic nuclear polarization and relaxation of a perturbed nuclear spin-system to its equilibrium state in a single-shot experiment. The SNS experiments were performed on a layer of bulk $n$-type GaAs embedded into a high-finesse microcavity with negative detuning. The dynamic nuclear spin polarization is observed as a shift of the peak in the electron spin noise spectrum due to the build-up of the Overhauser field acting on the electron spin. The relaxation dynamics of nuclear spin system was revealed in the time-resolved SNS experiments where the exponential decay of the Overhauser field with characteristic timescale of hundreds of seconds was detected. We show that elliptically polarized laser beam tuned in resonance with the cavity mode, whose energy corresponds to nominal transparency of the semiconductor, can nevertheless produce a sizable nuclear polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells

We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly disordered quantum wells is activated by dipole-dipole repulsion. The latter induces an emission blue shift that increases linearly with exciton density, whereas the radiative recombination rate increases exponentially. Under continuous, localized excitation, we measure a continuous red shift of the emission, as excitons propagate away from the excitation spot. This shift corresponds to a steady-state gradient of exciton density, measured over several tens of micrometers. Time-resolved micro-photoluminescence experiments provide information on the dynamics of recombination and transport of dipolar excitons. We account for the ensemble of experimental results by solving the nonlinear drift-diffusion equation. Quantitative analysis suggests that in such structures, exciton propagation on the scale of 10 to 20 microns is mainly driven by diffusion, rather than by drift, due to the strong disorder and the presence of nonradiative defects. Secondary exciton creation, most probably by the intense higher-energy luminescence, guided along the sample plane, is shown to contribute to the exciton emission pattern on the scale up to 100 microns. The exciton propagation length is strongly temperature dependent, the emission being quenched beyond a critical distance governed by nonradiative recombination.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nonlinear optical spectroscopy of indirect excitons in biased coupled quantum wells

Indirect excitons in coupled quantum wells are long-living quasi-particles, explored in the studies of collective quantum states. We demonstrate, that despite the extremely low oscillator strength, their spin and population dynamics can by addressed by time-resolved pump-probe spectroscopy. Our experiments make it possible to unravel and compare spin dynamics of direct excitons, indirect excitons and residual free electrons in coupled quantum wells. Measured spin relaxation time of indirect excitons exceeds not only one of direct excitons, but also one of free electrons by two orders of magnitude.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ultimate photo-induced Kerr rotation achieved in semiconductor microcavities

Photoinduced Kerr rotation by more than $π/2$ radians is demonstrated in planar quantum well microcavity in the strong coupling regime. This result is close to the predicted theoretical maximum of $π$. It is achieved by engineering microcavity parameters such that the optical impedance matching condition is reached at the smallest negative detuning between exciton resonance and the cavity mode. This ensures the optimum combination of the exciton induced optical non-linearity and the enhancement of the Kerr angle by the cavity. Comprehensive analysis of the polarization state of the light in this regime shows that both renormalization of the exciton energy and the saturation of the excitonic resonance contribute to the observed optical nonlinearities.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ballistic spin transport in exciton gases

Traditional spintronics relies on spin transport by charge carriers, such as electrons in semiconductor crystals. This brings several complications: the Pauli principle prevents the carriers from moving with the same speed; Coulomb repulsion leads to rapid dephasing of electron flows. Spin-optronics is a valuable alternative to traditional spintronics. In spin-optronic devices the spin currents are carried by electrically neutral bosonic quasi-particles: excitons or exciton-polaritons. They can form highly coherent quantum liquids and carry spins over macroscopic distances. The price to pay is a finite life-time of the bosonic spin carriers. We present the theory of exciton ballistic spin transport which may be applied to a range of systems where bosonic spin transport has been reported, in particular, to indirect excitons in coupled GaAs/AlGaAs quantum wells. We describe the effect of spin-orbit interaction of electrons and holes on the exciton spin, account for the Zeeman effect induced by external magnetic fields, long range and short range exchange splittings of the exciton resonances. We also consider exciton transport in the non-linear regime and discuss the definitions of exciton spin current, polarization current and spin conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Nonlinear Optical Probe of Indirect Excitons

We propose the application of nonlinear optics for studies of spatially indirect excitons in coupled quantum wells. We demonstrate, that despite their vanishing oscillator strength, indirect excitons can strongly contribute to the photoinduced reflectivity and Kerr rotation. This phenomenon is governed by the interaction between direct and indirect excitons. Both dark and bright states of indirect excitons can be probed by these nonlinear optical techniques.

0 citations0 reviewsNo code linkedOpen access