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L. V. Butov

L. V. Butov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.quant-gascond-mat.mtrl-sci

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Published work

27 published item(s)

preprint2025arXiv

Interference dislocations adjacent to emission spot

We studied interference dislocations (forks) adjacent to an emission spot in an interference pattern. The adjacent interference dislocations are observed in emission of excitons in a monolayer transition metal dichalcogenide and in emission of spatially indirect excitons, also known as interlayer excitons, in a van der Waals heterostructure. The simulations show that the adjacent interference dislocations appear due to the moiré effect in combined interference patterns produced by constituting parts of the emission spot. The adjacent interference dislocations can appear in interference images for various spatially modulated emission patterns.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Long-range quantum transport of indirect excitons in van der Waals heterostructure

Long lifetimes of spatially indirect excitons (IXs), also known as interlayer excitons, make possible long-range IX propagation. Van der Waals heterostructures composed of atomically thin layers of transition-metal dichalcogenides (TMDs) give an opportunity to realize excitons with high binding energies and provide a materials platform for the realization of both excitonic quantum phenomena and excitonic devices. Propagation of IXs in TMD heterostructures is intensively studied. However, in spite of long IX lifetimes, orders of magnitude longer than lifetimes of spatially direct excitons (DXs), a relatively short-range IX propagation with the $1/e$ decay distances $d_{1/e}$ up to few $μ$m was reported in the studies of TMD heterostructures. The short-range of IX propagation originates from in-plane potentials, which localize excitons and suppress exciton transport. In particular, significant in-plane moiré potentials predicted in TMD heterostructures can cause an obstacle for IX propagation. In this work, we realize in a MoSe$_2$/WSe$_2$ heterostructure a macroscopically long-range IX propagation with $d_{1/e}$ reaching $\sim 100$ $μ$m. The strong enhancement of IX propagation is realized using an optical excitation resonant to DXs in the heterostructure. The strong enhancement of IX propagation originates from the suppression of IX localization and scattering and is observed in the quantum regime.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Interference dislocations in condensate of indirect excitons

Phase singularities in quantum states play a significant role both in the state properties and in the transition between the states. For instance, a transition to two-dimensional superfluid state is governed by pairing of vortices and, in turn, unpaired vortices can cause dissipations for particle fluxes. Vortices and other phase defects can be revealed by characteristic features in interference patterns produced by the quantum system. We present dislocation-like phase singularities in interference patterns in a condensate of indirect excitons measured by shift-interferometry. We show that the observed dislocations in interference patterns are not associated with conventional phase defects: neither with vortices, nor with polarization vortices, nor with half-vortices, nor with skyrmions, nor with half-skyrmions. We present the origin of these new phase singularities in condensate interference patterns: the observed interference dislocations originate from converging of the condensate matter waves propagating from different sources.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Localized bright luminescence of indirect excitons and trions in MoSe$_2$/WSe$_2$ van der Waals heterostructure

Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in GaAs heterostructures where an IX range of existence is limited to low temperatures due to low IX binding energies. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by large binding energies giving the opportunity for exploring excitonic quantum gases and for creating excitonic devices at high temperatures. TMD heterostructures also offer a new platform for studying single-exciton phenomena and few-particle complexes. In this work, we present studies of IXs in MoSe$_2$/WSe$_2$ heterostructures and report on two IX luminescence lines whose energy splitting and temperature dependence identify them as neutral and charged IXs. The experimentally found binding energy of the indirect charged excitons, i.e. indirect trions, is close to the calculated binding energy of 28 meV for negative indirect trions in TMD heterostructures [Deilmann, Thygesen, Nano Lett. 18, 1460 (2018)]. We also report on the realization of IXs with a luminescence linewidth reaching 4~meV at low temperatures. An enhancement of IX luminescence intensity and the narrow linewidth are observed in localized spots.

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preprint2016arXiv

Indirect excitons in a potential energy landscape created by a perforated electrode

We report on the principle and realization of an excitonic device: a ramp that directs the transport of indirect excitons down a potential energy gradient created by a perforated electrode at constant voltage. The device provides an experimental proof of principle for controlling exciton transport with electrode density gradients. We observed that the exciton transport distance along the ramp increases with increasing exciton density. This effect is explained in terms of disorder screening by repulsive exciton-exciton interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Influence of magnetic quantum confined Stark effect on the spin lifetime of indirect excitons

We report on the unusual and counter-intuitive behaviour of spin lifetime of excitons in coupled semiconductor quantum wells (CQWs) in the presence of in-plane magnetic field. Instead of conventional acceleration of spin relaxation due to the Larmor precession of electron and hole spins we observe a strong increase of the spin relaxation time at low magnetic fields followed by saturation and decrease at higher fields. We argue that this non-monotonic spin relaxation dynamics is a fingerprint of the magnetic quantum confined Stark effect. In the presence of electric field along the CQW growth axis, an applied magnetic field efficiently suppresses the exciton spin coherence, due to inhomogeneous broadening of the $g$-factor distribution.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Measurement of exciton correlations using electrostatic lattices

We present a method for determining correlations in a gas of indirect excitons in a semiconductor quantum well structure. The method involves subjecting the excitons to a periodic electrostatic potential that causes modulations of the exciton density and photoluminescence (PL). Experimentally measured amplitudes of energy and intensity modulations of exciton PL serve as an input to a theoretical estimate of the exciton correlation parameter and temperature. We also present a proof-of-principle demonstration of the method for determining the correlation parameter and discuss how its accuracy can be improved.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Theory of condensation of indirect excitons in a trap

We present theoretical studies of condensation of indirect excitons in a trap. Our model quantifies the effect of screening of the trap potential by indirect excitons on exciton condensation. The theoretical studies are applied to a system of indirect excitons in a GaAs/AlGaAs coupled quantum well structure in a diamond-shaped electrostatic trap where exciton condensation was studied in earlier experiments. The estimated condensation temperature of the indirect excitons in the trap reaches hundreds of milliKelvin.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Fluctuation and Commensurability Effect of Exciton Density Wave

At low temperatures, indirect excitons formed at the in-plane electron-hole interface in a coupled quantum well structure undergo a spontaneous transition into a spatially modulated state. We report on the control of the instability wavelength, measurement of the dynamics of the exciton emission pattern, and observation of the fluctuation and commensurability effect of the exciton density wave. We found that fluctuations are strongly suppressed when the instability wavelength is commensurate with defect separation along the exciton density wave. The commensurability effect is also found in numerical simulations within the model describing the exciton density wave in terms of an instability due to stimulated processes.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

High-temperature superfluidity with indirect excitons in van der Waals heterostructures

All known superfluid and superconducting states of condensed matter are enabled by composite bosons (atoms, molecules, Cooper pairs) made of an even number of fermions. Temperatures where such macroscopic quantum phenomena occur are limited by the lesser of the binding energy and the degeneracy temperature of the bosons. High critical temperature cuprate superconductors set the present record of ~100 K. Here we propose a design for artificially structured materials to rival this record. The main elements of the structure are two monolayers of a transition metal dichalcogenide separated by an atomically thin spacer. Electrons and holes generated in the system would accumulate in the opposite monolayers and form bosonic bound states --- the indirect excitons. The resultant degenerate Bose gas of indirect excitons would exhibit macroscopic occupation of a quantum state and vanishing viscosity at high temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nonlinear optical spectroscopy of indirect excitons in biased coupled quantum wells

Indirect excitons in coupled quantum wells are long-living quasi-particles, explored in the studies of collective quantum states. We demonstrate, that despite the extremely low oscillator strength, their spin and population dynamics can by addressed by time-resolved pump-probe spectroscopy. Our experiments make it possible to unravel and compare spin dynamics of direct excitons, indirect excitons and residual free electrons in coupled quantum wells. Measured spin relaxation time of indirect excitons exceeds not only one of direct excitons, but also one of free electrons by two orders of magnitude.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ballistic spin transport in exciton gases

Traditional spintronics relies on spin transport by charge carriers, such as electrons in semiconductor crystals. This brings several complications: the Pauli principle prevents the carriers from moving with the same speed; Coulomb repulsion leads to rapid dephasing of electron flows. Spin-optronics is a valuable alternative to traditional spintronics. In spin-optronic devices the spin currents are carried by electrically neutral bosonic quasi-particles: excitons or exciton-polaritons. They can form highly coherent quantum liquids and carry spins over macroscopic distances. The price to pay is a finite life-time of the bosonic spin carriers. We present the theory of exciton ballistic spin transport which may be applied to a range of systems where bosonic spin transport has been reported, in particular, to indirect excitons in coupled GaAs/AlGaAs quantum wells. We describe the effect of spin-orbit interaction of electrons and holes on the exciton spin, account for the Zeeman effect induced by external magnetic fields, long range and short range exchange splittings of the exciton resonances. We also consider exciton transport in the non-linear regime and discuss the definitions of exciton spin current, polarization current and spin conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Nonlinear Optical Probe of Indirect Excitons

We propose the application of nonlinear optics for studies of spatially indirect excitons in coupled quantum wells. We demonstrate, that despite their vanishing oscillator strength, indirect excitons can strongly contribute to the photoinduced reflectivity and Kerr rotation. This phenomenon is governed by the interaction between direct and indirect excitons. Both dark and bright states of indirect excitons can be probed by these nonlinear optical techniques.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Optically Controlled Excitonic Transistor

Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at the optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical excitonic routers.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Pattern Formation in the Exciton Inner Ring

We report on the spatially separated pump-probe study of indirect excitons in the inner ring in the exciton emission pattern. A pump laser beam generates the inner ring and a weaker probe laser beam is positioned in the inner ring. The probe beam is found to suppress the exciton emission intensity in the ring. We also report on the inner ring fragmentation and formation of multiple rings in the inner ring region. These features are found to originate from a weak spatial modulation of the excitation beam intensity in the inner ring region. The modulation of exciton emission intensity anti-correlates with the modulation of the laser excitation intensity. The three phenomena - inner ring fragmentation, formation of multiple rings in the inner ring region, and emission suppression by a weak probe laser beam - have a common feature: a reduction of exciton emission intensity in the region of enhanced laser excitation. This effect is explained in terms of exciton transport and thermalization.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Excitation Energy Dependence of the Exciton Inner Ring

We report on the excitation energy dependence of the inner ring in the exciton emission pattern. The contrast of the inner ring is found to decrease with lowering excitation energy. Excitation by light tuned to the direct exciton resonance is found to effectively suppress excitation-induced heating of indirect excitons and facilitate the realization of a cold and dense exciton gas. The excitation energy dependence of the inner ring is explained in terms of exciton transport and cooling.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electrostatic Conveyer for Excitons

We report on the study of indirect excitons in moving lattices - conveyers created by a set of AC voltages applied to the electrodes on the sample surface. The wavelength of this moving lattice is set by the electrode periodicity, the amplitude is controlled by the applied voltage, and the velocity is controlled by the AC frequency. We observed the dynamical localization-delocalization transition for excitons in the conveyers and measured its dependence on the exciton density and conveyer amplitude and velocity. We considered a model for exciton transport via conveyers. The theoretical simulations are in agreement with the experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Kinetics of Exciton Emission Patterns and Carrier Transport

We report on the measurements of the kinetics of expanding and collapsing rings in the exciton emission pattern. The rings are found to preserve their integrity during expansion and collapse, indicating that the observed kinetics is controlled by charge carrier transport rather than by a much faster process of exciton production and decay. The relation between ring kinetics and carrier transport, revealed by our experiment and confirmed by comparison with a theoretical model, is used to determine electron and hole transport characteristics in a contactless fashion.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Kinetics of the inner ring in the exciton emission pattern in GaAs coupled quantum wells

We report on the kinetics of the inner ring in the exciton emission pattern. The formation time of the inner ring following the onset of the laser excitation is found to be about 30 ns. The inner ring was also found to disappear within 4 ns after the laser termination. The latter process is accompanied by a jump in the photoluminescence (PL) intensity. The spatial dependence of the PL-jump indicates that the excitons outside of the region of laser excitation, including the inner ring region, are efficiently cooled to the lattice temperature even during the laser excitation. The ring formation and disappearance are explained in terms of exciton transport and cooling.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Photon storage with sub-nanosecond readout rise time in coupled quantum wells

Photon storage with 250 ps rise time of the readout optical signal was implemented with indirect excitons in coupled quantum well nanostructures (CQW). The storage and release of photons was controlled by the gate voltage pulse. The transient processes in the CQW were studied by measuring the kinetics of the exciton emission spectra after application of the gate voltage pulse. Strong oscillations of the exciton emission wavelength were observed in the transient regime when the gate voltage pulse was carried over an ordinary wire. Gating the CQW via an impedance-matched broadband transmission line has lead to an effective elimination of these transient oscillations and expedient switching of the exciton energy to a required value within a short time, much shorter than the exciton lifetime.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Kinetics of indirect excitons in the optically-induced exciton trap

We report on the kinetics of a low-temperature gas of indirect excitons in the optically-induced exciton trap. The excitons in the region of laser excitation are found to rapidly -- within 4 ns -- cool to the lattice temperature T = 1.4 K, while the excitons at the trap center are found to be cold -- essentially at the lattice temperature -- even during the excitation pulse. The loading time of excitons to the trap center is found to be about 40 ns, longer than the cooling time yet shorter than the lifetime of the indirect excitons. The observed time hierarchy is favorable for creating a dense and cold exciton gas in optically-induced traps and for in situ control of the gas by varying the excitation profile in space and time before the excitons recombine.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

The Interaction in the Macroscopically Ordered Exciton State

The macroscopically ordered exciton state (MOES) - a periodic array of beads with spatial order on a macroscopic length - appears in the external exciton rings at low temperatures below a few Kelvin. Here, we report on the experimental study of the interaction in the MOES. The exciton PL energy varies in concert with the intensity along the circumference of the ring, with the largest energy found in the brightest regions. This shows that the MOES is characterized by the repulsive interaction and is not driven by the attractive interaction.

0 citations0 reviewsNo code linkedOpen access