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M. Kohda

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cond-mat.mes-hall

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preprint2016arXiv

Current-controlled Spin Precession of Quasi-Stationary Electrons in a Cubic Spin-Orbit Field

Space- and time-resolved measurements of spin drift and diffusion are performed on a GaAs-hosted two-dimensional electron gas. For spins where forward drift is compensated by backward diffusion, we find a precession frequency in absence of an external magnetic field. The frequency depends linearly on the drift velocity and is explained by the cubic Dresselhaus spin-orbit interaction, for which drift leads to a spin precession angle twice that of spins that diffuse the same distance.

preprint2015arXiv

Transition of a 2D spin mode to a helical state by lateral confinement

Spin-orbit interaction (SOI) leads to spin precession about a momentum-dependent spin-orbit field. In a diffusive two-dimensional (2D) electron gas, the spin orientation at a given spatial position depends on which trajectory the electron travels to that position. In the transition to a 1D system with increasing lateral confinement, the spin orientation becomes more and more independent on the trajectory. It is predicted that a long-lived helical spin mode emerges. Here we visualize this transition experimentally in a GaAs quantum-well structure with isotropic SOI. Spatially resolved measurements show the formation of a helical mode already for non-quantized and non-ballistic channels. We find a spin-lifetime enhancement that is in excellent agreement with theoretical predictions. Lateral confinement of a 2D electron gas provides an easy-to-implement technique for achieving high spin lifetimes in the presence of strong SOI for a wide range of material systems.

preprint2014arXiv

Direct determination of spin orbit interaction coefficients and realization of the persistent spin helix symmetry

The spin orbit interaction plays a crucial role in diverse fields of condensed matter, including the investigation of Majorana fermions, topological insulators, quantum information and spintronics. In III V zinc blende semiconductor heterostructures, two types of spin orbit interaction, Rashba and Dresselhaus act on the electron spin as effective magnetic fields with different directions. They are characterized by coefficients alpha and beta, respectively. When alpha is equal to beta, the so called persistent spin helix symmetry is realized. In this condition, invariance with respect to spin rotations is achieved even in the presence of the spin orbit interaction, implying strongly enhanced spin lifetimes for spatially periodic spin modes. Existing methods to evaluate alpha/beta require fitting analyses that often include ambiguity in the parameters used. Here, we experimentally demonstrate a simple and fitting parameter free technique to determine alpha/beta and to deduce the absolute values of alpha and beta. The method is based on the detection of the effective magnetic field direction and the strength induced by the two spin orbit interactions. Moreover, we observe the persistent spin helix symmetry by gate tuning.

preprint2012arXiv

Gate-controlled Persistent Spin Helix State in Materials with Strong Spin-Orbit Interaction

In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs/InAlAs quantum wells and first determine alpha/beta ~ 1 for non-gated structures by measuring the spin-galvanic and circular photogalvanic effects. Upon gate tuning the Rashba SOI strength in a complementary magneto-transport experiment, we then monitor the complete crossover from weak antilocalization via weak localization to weak antilocalization, where the emergence of weak localization reflects a PSH type state. A corresponding numerical analysis reveals that such a PSH type state indeed prevails even in presence of strong cubic SOI, however no longer at alpha = beta.