Researcher profile

G. Salis

G. Salis contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
7works
0followers
4topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2020arXiv

Benchmarking the noise sensitivity of different parametric two-qubit gates in a single superconducting quantum computing platform

The possibility to utilize different types of two-qubit gates on a single quantum computing platform adds flexibility in the decomposition of quantum algorithms. A larger hardware-native gate set may decrease the number of required gates, provided that all gates are realized with high fidelity. Here, we benchmark both controlled-Z (CZ) and exchange-type (iSWAP) gates using a parametrically driven tunable coupler that mediates the interaction between two superconducting qubits. Using randomized benchmarking protocols we estimate an error per gate of $0.9\pm0.03\%$ and $1.3\pm0.4\%$ fidelity for the CZ and the iSWAP gate, respectively. We argue that spurious $ZZ$-type couplings are the dominant error source for the iSWAP gate, and that phase stability of all microwave drives is of utmost importance. Such differences in the achievable fidelities for different two-qubit gates have to be taken into account when mapping quantum algorithms to real hardware.

preprint2012arXiv

Breakdown of the Korringa Law of Nuclear Spin Relaxation in Metallic GaAs

We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T1 times agree very well with NMR data available for T > 1 K. However, the nuclear spin relaxation rate clearly deviates from the well-established Korringa law expected in metallic samples and follows a sub-linear temperature dependence 1/T1 ~ T^0.6 for 0.1 K < T < 10 K. Further, we investigate nuclear spin inhomogeneities.

preprint2012arXiv

Direct mapping of the formation of a persistent spin helix: Supplementary information

The spin-orbit interaction (SOI) in zincblende semiconductor quantum wells can be set to a symmetry point, in which spin decay is strongly suppressed for a helical spin mode. Signatures of such a persistent spin helix (PSH) have been probed using the transient spin grating technique, but it has not yet been possible to observe the formation and the helical nature of a PSH. Here we directly map the diffusive evolution of a local spin excitation into a helical spin mode by a time- and spatially resolved magneto-optical Kerr rotation technique. Depending on its in-plane direction, an external magnetic field interacts differently with the spin mode and either highlights its helical nature or destroys the SU(2) symmetry of the SOI and thus decreases the spin lifetime. All relevant SOI parameters are experimentally determined and confirmed with a numerical simulation of spin diffusion in the presence of SOI.

preprint2011arXiv

Optical polarization of localized hole spins in p-doped quantum wells

The initialization of spin polarization in localized hole states is investigated using time-resolved Kerr rotation. We find that the sign of the polarization depends on the magnetic field, and the power and the wavelength of the circularly polarized pump pulse. An analysis of the spin dynamics and the spin-initialization process shows that two mechanisms are responsible for spin polarization with opposite sign: The difference of the g factor between the localized holes and the trions, as well as the capturing process of dark excitons by the localized hole states.

preprint2011arXiv

The Nuclear Spin Environment in Lateral GaAs Spin Valves

The spin degree of freedom in solids offers opportunities beyond charge-based electronics and is actively investigated for both spintronics and quantum computation. However, the interplay of these spins with their native environment can give rise to detrimental effects such as spin relaxation and decoherence. Here, we use an all-electrical, lateral GaAs spin valve to manipulate and investigate the inherent nuclear spin system. Hanle satellites are used to determine the nuclear spin relaxation rates for the previously unexplored temperature range down to 100 mK, giving T1 times as long as 3 hours. Despite metallic temperature dependence of resistivity, the observed relaxation rates show a sub-linear temperature dependence. This contrasts the Korringa relaxation mechanism observed in metals but is not inconsistent with hyperfine-mediated relaxation in a disordered, interacting conductor not far from the metal-insulator transition. We discuss possible relaxation mechanisms and further investigate inhomogeneities in the nuclear spin polarization.

preprint2010arXiv

Role of linear and cubic terms for the drift-induced Dresselhaus spin-orbit splitting in a two-dimensional electron gas

The Dresselhaus spin-orbit interaction (SOI) of a series of two-dimensional electron gases (2DEGs) hosted in GaAs/AlGaAs and InGaAs/GaAs (001) quantum wells (QWs) is measured by monitoring the precession frequency of the spins as a function of an in-plane electric field. The measured spin-orbit-induced spin-splitting is linear in the drift velocity, even in the regime where the cubic Dresselhaus SOI is important. We relate the measured splitting to the Dresselhaus coupling parameter, the QW confinement, the Fermi wavenumber and to strain effects. From this, the coupling parameter is determined quantitatively, including its sign.

preprint2009arXiv

Signatures of dynamically polarized nuclear spins in all-electrical lateral spin transport devices

The effect of nuclear spins in Fe/GaAs all-electrical spin-injection devices is investigated. At temperatures below 50 K, strong modifications of the non-local spin signal are found that are characteristic for hyperfine coupling between conduction electrons and dynamically polarized nuclear spins. The perpendicular component of the nuclear Overhauser field depolarizes electron spins near zero in-plane external magnetic field, and can suppress such dephasing when antialigned with the external field, leading to satellite peaks in a Hanle measurement. The features observed agree well with a Monte Carlo simulation of the spin diffusion equation including hyperfine interaction, and are used to study the nuclear spin dynamics and relate it to the spin polarization of injected electrons.