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A. Laucht

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Published work

15 published item(s)

preprint2021arXiv

Development of an Undergraduate Quantum Engineering Degree

Quantum technology is exploding. Computing, communication, and sensing are just a few areas likely to see breakthroughs in the next few years. Worldwide, national governments, industries, and universities are moving to create a new class of workforce - the Quantum Engineers. Demand for such engineers is predicted to be in the tens of thousands within a five-year timescale. However, how best to train this next generation of engineers is far from obvious. Quantum mechanics - long a pillar of traditional physics undergraduate degrees - must now be merged with traditional engineering offerings. This paper discusses the history, development, and first year of operation of the world's first undergraduate degree in quantum engineering. The main purpose of the paper is to inform the wider debate, now being held by many institutions worldwide, on how best to formally educate the Quantum Engineer.

preprint2020arXiv

Silicon qubit fidelities approaching incoherent noise limits via pulse engineering

The performance requirements for fault-tolerant quantum computing are very stringent. Qubits must be manipulated, coupled, and measured with error rates well below 1%. For semiconductor implementations, silicon quantum dot spin qubits have demonstrated average single-qubit Clifford gate error rates that approach this threshold, notably with error rates of 0.14% in isotopically enriched $^{28}$Si/SiGe devices. This gate performance, together with high-fidelity two-qubit gates and measurements, is only known to meet the threshold for fault-tolerant quantum computing in some architectures when assuming that the noise is incoherent, and still lower error rates are needed to reduce overhead. Here we experimentally show that pulse engineering techniques, widely used in magnetic resonance, improve average Clifford gate error rates for silicon quantum dot spin qubits to 0.043%,a factor of 3 improvement on previous best results for silicon quantum dot devices. By including tomographically complete measurements in randomised benchmarking, we infer a higher-order feature of the noise called the unitarity, which measures the coherence of noise. This in turn allows us to theoretically predict that average gate error rates as low as 0.026% may be achievable with further pulse improvements. These fidelities are ultimately limited by Markovian noise, which we attribute to charge noise emanating from the silicon device structure itself, or the environment.

preprint2019arXiv

Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in the semiconductor material, including at the atomic scale, disrupt this analogy between atoms and quantum dots, so that real devices seldom display such a systematic many-electron arrangement. We demonstrate here an electrostatically-defined quantum dot that is robust to disorder, revealing a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. We explore various fillings consisting of a single valence electron -- namely 1, 5, 13 and 25 electrons -- as potential qubits, and we identify fillings that yield a total spin-1 on the dot. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR). Higher shell states are shown to be more susceptible to the driving field, leading to faster Rabi rotations of the qubit. We investigate the impact of orbital excitations of the p- and d-shell electrons on single qubits as a function of the dot deformation. This allows us to tune the dot excitation spectrum and exploit it for faster qubit control. Furthermore, hotspots arising from this tunable energy level structure provide a pathway towards fast spin initialisation. The observation of spin-1 states may be exploited in the future to study symmetry-protected topological states in antiferromagnetic spin chains and their application to quantum computing.

preprint2019arXiv

Silicon quantum processor unit cell operation above one Kelvin

Quantum computers are expected to outperform conventional computers for a range of important problems, from molecular simulation to search algorithms, once they can be scaled up to large numbers of quantum bits (qubits), typically millions. For most solid-state qubit technologies, e.g. those using superconducting circuits or semiconductor spins, scaling poses a significant challenge as every additional qubit increases the heat generated, while the cooling power of dilution refrigerators is severely limited at their operating temperature below 100 mK. Here we demonstrate operation of a scalable silicon quantum processor unit cell, comprising two qubits confined to quantum dots (QDs) at $\sim$1.5 Kelvin. We achieve this by isolating the QDs from the electron reservoir, initialising and reading the qubits solely via tunnelling of electrons between the two QDs. We coherently control the qubits using electrically-driven spin resonance (EDSR) in isotopically enriched silicon $^{28}$Si, attaining single-qubit gate fidelities of 98.6% and coherence time $T_2^*$ = 2$μ$s during `hot' operation, comparable to those of spin qubits in natural silicon at millikelvin temperatures. Furthermore, we show that the unit cell can be operated at magnetic fields as low as 0.1 T, corresponding to a qubit control frequency of 3.5 GHz, where the qubit energy is well below the thermal energy. The unit cell constitutes the core building block of a full-scale silicon quantum computer, and satisfies layout constraints required by error correction architectures. Our work indicates that a spin-based quantum computer could be operated at elevated temperatures in a simple pumped $^4$He system, offering orders of magnitude higher cooling power than dilution refrigerators, potentially enabling classical control electronics to be integrated with the qubit array.

preprint2016arXiv

A single-atom quantum memory in silicon

Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched $^{28}$Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity of $F_p =$81${\pm}$7%, a memory fidelity ($F_m$) of over 90%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses.

preprint2014arXiv

A Two Qubit Logic Gate in Silicon

Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo2000, Loss1998}. Strong effort across several fields have led to an impressive array of qubit realizations, including trapped ions \cite{Brown2011}, superconducting circuits \cite{Barends2014}, single photons\cite{Kok2007}, single defects or atoms in diamond \cite{Waldherr2014, Dolde2014} and silicon \cite{Muhonen2014}, and semiconductor quantum dots \cite{Veldhorst2014}, all with single qubit fidelities exceeding the stringent thresholds required for fault-tolerant quantum computing \cite{Fowler2012}. Despite this, high-fidelity two-qubit gates in the solid-state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits \cite{Barends2014}, as semiconductor systems have suffered from difficulties in coupling qubits and dephasing \cite{Nowack2011, Brunner2011, Shulman2012}. Here, we show that these issues can be eliminated altogether using single spins in isotopically enriched silicon\cite{Itoh2014} by demonstrating single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the original Loss-DiVincenzo proposal \cite{Loss1998}. We realize CNOT gates via either controlled rotation (CROT) or controlled phase (CZ) operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is employed in the two-qubit CZ gate. The speed of the two-qubit CZ operations is controlled electrically via the detuning energy and we find that over 100 two-qubit gates can be performed within a two-qubit coherence time of 8 \textmu s, thereby satisfying the criteria required for scalable quantum computation.

preprint2014arXiv

Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically purified 28-Si. We find average gate fidelities of 99.95 % for the electron, and 99.99 % for the nuclear spin. These values are above certain error correction thresholds, and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware, and not the intrinsic behaviour of the qubit.

preprint2012arXiv

A Waveguide-Coupled On-Chip Single Photon Source

We investigate single photon generation from individual self-assembled InGaAs quantum dots coupled to the guided optical mode of a GaAs photonic crystal waveguide. By performing confocal microscopy measurements on single dots positioned within the waveguide, we locate their positions with a precision better than 0.5 \mum. Time-resolved photoluminescence and photon autocorrelation measurements are used to prove the single photon character of the emission into the propagating waveguide mode. The results obtained demonstrate that such nanostructures can be used to realize an on-chip, highly directed single photon source with single mode spontaneous emision coupling efficiencies in excess of beta~85 % and the potential to reach maximum emission rates >1 GHz.

preprint2011arXiv

A Correlation between the Emission Intensity of Self-Assembled Germanium Islands and the Quality Factor of Silicon Photonic Crystal Nanocavities

We present a comparative micro-photoluminescence study of the emission intensity of self-assembled germanium islands coupled to the resonator mode of two-dimensional silicon photonic crystal defect nanocavities. The emission intensity is investigated for cavity modes of L3 and Hexapole cavities with different cavity quality factors. For each of these cavities many nominally identical samples are probed to obtain reliable statistics. As the quality factor increases we observe a clear decrease in the average mode emission intensity recorded under comparable optical pumping conditions. This clear experimentally observed trend is compared with simulations based on a dissipative master equation approach that describes a cavity weakly coupled to an ensemble of emitters. We obtain evidence that reabsorption of photons emitted into the cavity mode is responsible for the observed trend. In combination with the observation of cavity linewidth broadening in power dependent measurements, we conclude that free carrier absorption is the limiting effect for the cavity mediated light enhancement under conditions of strong pumping.

preprint2011arXiv

Cavity versus dot emission in strongly coupled quantum dots-cavity systems

We discuss the spectral lineshapes of N quantum dots in strong coupling with the single mode of a microcavity. Nontrivial features are brought by detuning the emitters or probing the direct exciton emission spectrum. We describe dark states, quantum nonlinearities, emission dips and interferences and show how these various effects may coexist, giving rise to highly peculiar lineshapes.

preprint2010arXiv

Mutual Coupling of two Semiconductor Quantum Dots via an Optical Nanocavity Mode

We present an experimental and theoretical study of a system consisting of two spatially separated self-assembled InGaAs quantum dots strongly coupled to a single optical nanocavity mode. Due to their different size and compositional profiles, the two quantum dots exhibit markedly different DC Stark shifts. This allows us to tune them into mutual resonance with each other and a photonic crystal nanocavity mode as a bias voltage is varied. Photoluminescence measurements show a characteristic triple peak during the double anticrossing, which is a clear signature of a coherently coupled system of three quantum states. We fit the entire set of emission spectra of the coupled system to theory and are able to investigate the coupling between the two quantum dots via the cavity mode, and the coupling between the two quantum dots when they are detuned from the cavity mode. We suggest that the resulting quantum V-system may be advantageous since dephasing due to incoherent losses from the cavity mode can be avoided.

preprint2010arXiv

Non-resonant feeding of photonic crystal nanocavity modes by quantum dots

We experimentally probe the non-resonant feeding of photons into the optical mode of a two dimensional photonic crystal nanocavity from the discrete emission from a quantum dot. For a strongly coupled system of a single exciton and the cavity mode, we track the detuning-dependent photoluminescence intensity of the polariton peaks at different lattice temperatures. At low temperatures we observe a clear asymmetry in the emission intensity depending on whether the exciton is at higher or lower energy than the cavity mode. At high temperatures this asymmetry vanishes when the probabilities to emit or absorb a phonon become similar. For a different dot-cavity system where the cavity mode is detuned by ΔE>5 meV to lower energy than the single exciton transitions emission from the mode remains correlated with the quantum dot as demonstrated unambiguously by cross-correlation photon counting experiments. By monitoring the temporal evolution of the photoluminescence spectrum, we show that feeding of photons into the mode occurs from multi-exciton transitions. We observe a clear anti-correlation of the mode and single exciton emission; the mode emission quenches as the population in the system reduces towards the single exciton level whilst the intensity of the mode emission tracks the multi-exciton transitions.

preprint2010arXiv

Temporal Monitoring of Non-resonant Feeding of Semiconductor Nanocavity Modes by Quantum Dot Multiexciton Transitions

We experimentally investigate the non-resonant feeding of photons into the optical mode of a zero dimensional nanocavity by quantum dot multiexciton transitions. Power dependent photoluminescence measurements reveal a super-linear power dependence of the mode emission, indicating that the emission stems from multiexcitons. By monitoring the temporal evolution of the photoluminescence spectrum, we observe a clear anticorrelation of the mode and single exciton emission; the mode emission quenches as the population in the system reduces towards the single exciton level whilst the intensity of the mode emission tracks the multi-exciton transitions. Our results lend strong support to a recently proposed mechanism mediating the strongly non-resonant feeding of photons into the cavity mode.

preprint2009arXiv

Cascaded exciton emission of an individual strain-induced quantum dot

Single strain-induced quantum dots are isolated for optical experiments by selective removal of the inducing InP islands from the sample surface. Unpolarized emission of single, bi- and triexciton transitions are identified by power-dependent photoluminescence spectroscopy. Employing time-resolved experiments performed at different excitation powers we find a pronounced shift of the rise and decay times of these different transitions as expected from cascaded emission. Good agreement is found for a rate equation model for a three step cascade.

preprint2009arXiv

Enhanced photoluminescence emission from two-dimensional silicon photonic crystal nanocavities

We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from crystalline silicon at ~1.10 eV we observe a broad defect band luminescence from ~1.05-1.09 eV. Spatially resolved spectroscopy demonstrates that this defect band is present only in the region where air-holes have been etched during the fabrication process. Detectable emission from the cavity mode persists up to room-temperature, in strong contrast the background emission vanishes for T > 150 K. An Ahrrenius type analysis of the temperature dependence of the luminescence signal recorded either in-resonance with the cavity mode, or weakly detuned, suggests that the higher temperature stability may arise from an enhanced internal quantum efficiency due to the Purcell-effect.