Researcher profile

G. C. Gardner

G. C. Gardner contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2021arXiv

Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high average field-effect mobility of $μ\approx 3200\,\mathrm{cm^2/Vs}$ for the InAs channel, and a hard induced superconducting gap. Josephson junctions exhibited a high interface transmission, $\mathcal{T} \approx 0.75 $, gate voltage tunable switching current with a product of critical current and normal state resistance, $I_{\mathrm{C}}R_{\mathrm{N}} \approx 83\,\mathrm{μV}$, and signatures of multiple Andreev reflections. These results pave the way for scalable and high coherent gate voltage tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.

preprint2021arXiv

Hydrodynamic and ballistic transport over large length scales in GaAs/AlGaAs

We study hydrodynamic and ballistic transport regimes through nonlocal resistance measurements and high-resolution kinetic simulations in a mesoscopic structure on a high-mobility two-dimensional electron system in a GaAs/AlGaAs heterostructure. We evince the existence of collective transport phenomena in both regimes and demonstrate that negative nonlocal resistances and current vortices are not exclusive to only the hydrodynamic regime. The combined experiments and simulations highlight the importance of device design, measurement schemes and one-to-one modeling of experimental devices to demarcate various transport regimes.

preprint2020arXiv

Anomalous Nematic States in High Half-Filled Landau Levels

It is well established that the ground states of a two-dimensional electron gas with half-filled high ($N \ge 2$) Landau levels are compressible charge-ordered states, known as quantum Hall stripe (QHS) phases. The generic features of QHSs are a maximum (minimum) in a longitudinal resistance $R_{xx}$ ($R_{yy}$) and a non-quantized Hall resistance $R_H$. Here, we report on emergent minima (maxima) in $R_{xx}$ ($R_{yy}$) and plateau-like features in $R_H$ in half-filled $N \ge 3$ Landau levels. Remarkably, these unexpected features develop at temperatures considerably lower than the onset temperature of QHSs, suggesting a new ground state.

preprint2020arXiv

Coherent transport through a Majorana island in an Aharonov-Bohm interferometer

Majorana zero modes are leading candidates for topological quantum computation due to non-local qubit encoding and non-abelian exchange statistics. Spatially separated Majorana modes are expected to allow phase-coherent single-electron transport through a topological superconducting island via a mechanism referred to as teleportation. Here we experimentally investigate such a system by patterning an elongated epitaxial InAs-Al island embedded in an Aharonov-Bohm interferometer. With increasing parallel magnetic field, a discrete sub-gap state in the island is lowered to zero energy yielding persistent 1e-periodic Coulomb blockade conductance peaks (e is the elementary charge). In this condition, conductance through the interferometer is observed to oscillate in a perpendicular magnetic field with a flux period of h/e (h is Planck's constant), indicating coherent transport of single electrons through the islands, a signature of electron teleportation via Majorana modes, could also be observed, suggesting additional non-Majorana mechanisms for 1e transport through these moderately short wires.

preprint2020arXiv

Disorder broadening of even denominator fractional quantum Hall states in the presence of a short-range alloy potential

We study energy gaps of the $ν=7/2$ and $ν=5/2$ fractional quantum Hall states in a series of two-dimensional electron gases containing alloy disorder. We found that gaps at these two filling factors have the same suppression rate with alloy disorder. The dimensionless intrinsic gaps in our alloy samples obtained from the model proposed by Morf and d'Ambrumenil are consistent with numerical results, but are larger than those obtained from experiments on pristine samples published in the literature. The disorder broadening parameter has large uncertainties. However, a modified analysis relying on shared intrinsic gaps yields consistent results for both the $ν=5/2$ and $7/2$ fractional quantum Hall states and establishes a linear relationship between the disorder broadening parameter and alloy concentration. Furthermore, we find that we can separate contributions to the disorder broadening of the long-range and short-range scattering.

preprint2019arXiv

Dispersive Gate Sensing the Quantum Capacitance of a Point Contact

The technique of dispersive gate sensing (DGS) uses a single electrode to readout a qubit by detecting the change in quantum capacitance due to single electron tunnelling. Here, we extend DGS from the detection of discrete tunnel events to the open regime, where many electrons are transported via partially- or fully-transmitting quantum modes. Comparing DGS with conventional transport shows that the technique can resolve the Van Hove singularities of a one-dimensional ballistic system, and also probe aspects of the potential landscape that are not easily accessed with dc transport. Beyond readout, these results suggest that gate-sensing can also be of use in tuning-up qubits or probing the charge configuration of open quantum devices in the regime where electrons are delocalized.

preprint2019arXiv

Relating Andreev Bound States and Supercurrents in Hybrid Josephson Junctions

We investigate superconducting quantum interference devices consisting of two highly transmissive Josephson junctions coupled by a superconducting loop, all defined in an epitaxial InAs/Al heterostructure. A novel device design allows for independent measurements of the Andreev bound state spectrum within the normal region of a junction and the resulting current-phase relation. We show that knowledge of the Andreev bound state spectrum alone is enough to derive the independently measured phase dependent supercurrent. On the other hand, the opposite relation does not generally hold true as details of the energy spectrum are averaged out in a critical current measurement. Finally, quantitative understanding of field dependent spectrum and supercurrent require taking into account the second junction in the loop and the kinetic inductance of the epitaxial Al film.