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M. F. Smith

M. F. Smith contributes to research discovery and scholarly infrastructure.

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cond-mat.str-el cond-mat.mtrl-sci cond-mat.supr-con physics.ins-det

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preprint2011arXiv

Development of a mini-PET Detector based on Silicon Photomultiplier Arrays for Plant Imaging Applications

A mini-PET style detector system is being developed for a plant imaging application with a compact array of silicon photomultipliers (SiPM) replacing position sensitive photomultipliers (PSPMT). In addition to compactness, the use of SiPMs will allow imaging setups involving high strength MRI-type magnetic fields. The latter will allow for better position resolution of the initial positron annihilations in the plant tissue. In the present work, prototype arrays are tested for the uniformity of their response as it is known that PSPMTs require significant gain compensation on the individual channels to achieve an improved uniformity in response. The initial tests indicate a high likelihood that the SiPM arrays can be used without any gain compensation.

preprint2010arXiv

Proposed measurements of the interlayer magnetoresistance of underdoped cuprate superconductors can distinguish closed pockets from open arcs in the Fermi surface

An outstanding question concerning the underdoped cuprate concerns the true nature of their Fermi surface which appears as a set of disconnected arcs. Theoretical models have proposed two distinct possibilities: (1) each arc is the observable part of a partially-hidden closed pocket, and (2) each arc is open, truncated at its apparent ends. We show that measurements of the variation of the interlayer resistance with the direction of a magnetic field parallel to the layers can qualitatively distinguish closed pockets from open arcs. This is possible because the field can be oriented such that all electrons on arcs encounter a large Lorentz force and resulting magnetoresistance whereas some electrons on pockets escape the effect by moving parallel to the field.

preprint2010arXiv

Thermal and electrical conductivity of Fermi pocket models of underdoped cuprates

Several models of the electronic spectrum in the pseudogap state of underdoped cuprates have been proposed to explain ARPES and STM measurements, which reveal only truncated Fermi pockets instead of a full metallic Fermi surface. We consider the transport properties expected of four physically distinct models, and calculate the thermal and electrical conductivity of the electronic quasiparticles. By proposing transport currents that reflect the close correspondence between quasiparticles on the Fermi pockets in the pseudogap and those near nodes in the superconducting state, we show that measurable transport coefficients provide stringent tests of pseudogap models.

preprint2009arXiv

A Consistent Picture of Charge Distribution in Reduced Ceria Phases

We consider the implications of the bond valence model (BVM) description of charge distribution in reduced ceria phases (CeO$_{2-x}$)\cite{Shoko2009,Shoko2009b} to the models used to describe electronic and ionic conductivity in these phases. We conclude that the BVM is consistent with both the small polaron model (SPM) and the atomistic models which describe the electronic and ionic conductivities respectively. For intermediate phases, i.e., $x \sim 0.3$, we suggest the possibility of low temperature metallic conductivity. This has not yet been experimentally observed. We contrast the BVM results and the conventional description of charge distribution in reduced ceria phases.

preprint2009arXiv

Charge Distribution Near Oxygen Vacancies in Reduced Ceria

Understanding the electronic charge distribution around oxygen vacancies in transition metal and rare earth oxides is a scientific challenge of considerable technological importance. We show how significant information about the charge distribution around vacancies in cerium oxide can be gained from a study of high resolution crystal structures of higher order oxides which exhibit ordering of oxygen vacancies. Specifically, we consider the implications of a bond valence sum analysis of Ce$_{7}$O$_{12}$ and Ce$_{11}$O$_{20}$. To illuminate our analysis we show alternative representations of the crystal structures in terms of orderly arrays of co-ordination defects and in terms of flourite-type modules. We found that in Ce$_{7}$O$_{12}$, the excess charge resulting from removal of an oxygen atom delocalizes among all three triclinic Ce sites closest to the O vacancy. In Ce$_{11}$O$_{20}$, the charge localizes on the next nearest neighbour Ce atoms. Our main result is that the charge prefers to distribute itself so that it is farthest away from the O vacancies. This contradicts \emph{the standard picture of charge localisation} which assumes that each of the two excess electrons localises on one of the cerium ions nearest to the vacancy. This standard picture is assumed in most calculations based on density functional theory (DFT). Based on the known crystal structure of Pr$_{6}$O$_{11}$, we also predict that the charge in Ce$_{6}$O$_{11}$ will be found in the second coordination shell of the O vacancy. Although this review focuses on bulk cerium oxides our approach to characterising electronic properties of oxygen vacancies and the physical insights gained should also be relevant to surface defects and to other rare earth and transition metal oxides.

preprint2008arXiv

Mixed valency in cerium oxide crystallographic phases: Determination of valence of the different cerium sites by the bond valence method

We have applied the bond valence method to cerium oxides to determine the oxidation states of the Ce ion at the various site symmetries of the crystals. The crystals studied include cerium dioxide and the two sesquioxides along with some selected intermediate phases which are crystallographically well characterized. Our results indicate that cerium dioxide has a mixed-valence ground state with an f-electron population on the Ce site of 0.27 while both the A- and C-sesquioxides have a nearly pure f^1 configuration. The Ce sites in most of the intermediate oxides have non-integral valences. Furthermore, many of these valences are different from the values predicted from a naive consideration of the stoichiometric valence of the compound.