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M. Boscardin

M. Boscardin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.ins-dethep-exastro-ph.IMphysics.comp-phphysics.optics

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Published work

24 published item(s)

preprint2022arXiv

Beam test results of 25 $μ$m and 35 $μ$m thick FBK UFSD]{Beam test results of 25 $μ$m and 35 $μ$m thick FBK ultra fast silicon detectors

This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 V and 240 V has been obtained for the 25 and 35 $μ$m thick UFSDs, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

DC-coupled resistive silicon detectors for 4-D tracking

In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key features of the RSD design are maintained, yielding excellent timing and spatial resolutions: a few tens of ps and a few microns. In the presentation, we will outline the optimization methodology and the results of the simulation. We will present detailed studies on the effect of changing the ratio between the n+ layer resistivity and the low-resistivity ring and on the achievable temporal and spatial resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Novel Sensors for Particle Tracking: a Contribution to the Snowmass Community Planning Exercise of 2021

Five contemporary technologies are discussed in the context of their potential roles in particle tracking for future high energy physics applications. These include sensors of the 3D configuration, in both diamond and silicon, submicron-dimension pixels, thin film detectors, and scintillating quantum dots in gallium arsenide. Drivers of the technologies include radiation hardness, excellent position, vertex, and timing resolution, simplified integration, and optimized power, cost, and material.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D- detectors

Hydrogenated Amorphous Silicon (a-Si:H) is a material well known for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated entirely by means of intrinsic and doped PECVD of a mixture of Silane (SiH4) and molecular Hydrogen. In order to develop 3D detector geometries using a-Si:H, two options for the junction fabrication have been considered: ion implantation and charge selective contacts through atomic layer deposition. In order to test the functionality of the charge selective contact electrodes, planar detectors have been fabricated utilizing this technique. In this paper, we provide a general overview of the 3D fabrication project followed by the results of leakage current measurements and x-ray dosimetric tests performed on planar diodes containing charge selective contacts to investigate the feasibility of the charge selective contact methodology for integration with the proposed 3D detector architectures.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The second production of RSD (AC-LGAD) at FBK

In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a continuous gain implant, (ii) a resistive n-cathode and (iii) a dielectric coupling layer deposited on top, guaranteeing a good spatial reconstruction of the hit position while benefiting from the good timing properties of LGADs. We will start from the very promising results of our RSD1 batch in terms of tracking performances and then we will move to the description of the design of the RSD2 run. In particular, the principles driving the sensor design and the specific AC-electrode layout adopted to optimize the signal confinement will be addressed.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High performance picosecond- and micron-level 4D particle tracking with 100% fill-factor Resistive AC-Coupled Silicon Detectors (RSD)

In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazione Bruno Kessler (FBK) in Trento. With their 100% fill-factor, RSD represent the new enabling technology for high-precision 4D-tracking. Indeed, being based on the well-known charge multiplication mechanism of Low-Gain Avalanche Detectors (LGAD), they benefit from the very good timing performances of such technology together with an unprecedented resolution of the spatial tracking, which allows to reach the micron-level scale in the track reconstruction. This is essentially due to the absence of any segmentation structure between pads (100% fill-factor) and to other two innovative key-features: the first one is a properly doped n+ resistive layer, slowing down the charges just after being multiplied, and the second one is a dielectric layer grown on Silicon, inducing a capacitive coupling on the metal pads deposited on top of the detector. The very good spatial resolution (micron-level) we measured experimentally - higher than the nominal pad pitch - comes from the analogical nature of the readout of signals, whose amplitude attenuates from the pad center to its periphery, while the outstanding results in terms of timing (less than 14 ps, even better than standard LGAD) are due to a combination of very-fine pitch, analogical response and charge multiplication.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

MEMS Mirror Manufacturing and Testing for Innovative Space Applications

In the framework of the GLARE-X (Geodesy via LAser Ranging from spacE X) project, led by INFN and funded for the years 2019-2021, aiming at significantly advance space geodesy, one shows the initial activities carried out in 2019 in order to manufacture and test adaptive mirrors. This specific article deals with manufacturing and surface quality measurements of the passive substrate of 'candidate' MEMS (Micro-Electro-Mechanical Systems) mirrors for MRRs (Modulated RetroReflectors); further publications will show the active components. The project GLARE-X was approved by INFN for the years 2019-2021: it involves several institutions, including, amongst the other, INFN-LNF and FBK. GLARE-X is an innovative R&D activity, whose at large space geodesy goals will concern the following topics: inverse laser ranging (from a laser terminal in space down to a target on a planet), laser ranging for debris removal and iterative orbit correction, development of high-end ToF (Time of Flight) electronics, manufacturing and testing of MRRs for space, and provision of microreflectors for future NEO (Near Earth Orbit) cubesats. This specific article summarizes the manufacturing and surface quality measurements activities performed on the passive substrate of 'candidate' MEMS mirrors, which will be in turn arranged into MRRs. The final active components, to be realized by 2021, will inherit the manufacturing characteristics chosen thanks to the presented (and further) testing campaigns, and will find suitable space application to NEO, Moon, and Mars devices, like, for example, cooperative and active lidar scatterers for laser altimetry and lasercomm support.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2

The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiation with neutrons took place at the TRIGA reactor in Ljubljana, while the proton irradiation took place at CERN SPS. The sensors were exposed to a neutron fluence of 4*10e14, 8*1014, 1.5*10e15, 3*10e15, 6*10e15 neq/cm2 and to a proton fluence of 9.6*10e14 p/cm2, equivalent to a fluence of 6*10e14 neq/cm2. The internal gain and the timing resolution were measured as a function of bias voltage at -20C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Silicon Sensors for Future Particle Trackers

Several future high-energy physics facilities are currently being planned. The proposed projects include high energy $e^+ e^-$ circular and linear colliders, hadron colliders and muon colliders, while the Electron-Ion Collider (EIC) has already been approved for construction at the Brookhaven National Laboratory. Each proposal has its own advantages and disadvantages in term of readiness, cost, schedule and physics reach, and each proposal requires the design and production of specific new detectors. This paper first presents the performances required to the future silicon tracking systems at the various new facilities, and then it illustrates a few possibilities for the realization of such silicon trackers. The challenges posed by the future facilities require a new family of silicon detectors, where features such as impact ionization, radiation damage saturation, charge sharing, and analog readout are exploited to meet these new demands.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

First demonstration of 200, 100, and 50 um pitch Resistive AC-Coupled Silicon Detectors (RSD) with 100% fill-factor for 4D particle tracking

We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We succeeded in the challenging goal of obtaining very fine pitch (50, 100, and 200 um) while maintaining the signal waveforms suitable for high timing and 4D-tracking performances, as in the standard LGAD-based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors

In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector

Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors

The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements for CMS 3D pixel sensors with different electrode configurations. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution of 3D sensors are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties, such as MOS capacitors, planar and gate-controlled diodes are also presented.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades

The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of $1 \times 10^{15} {\rm n_{eq}}/{\rm cm}^2$ comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb$^{-1}$) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FTK.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the "active edge" concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Development of 3D-DDTC pixel detectors for the ATLAS upgrade

We report on the development of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) pixel detectors fabricated at FBK-irst (Trento, Italy) and oriented to the ATLAS upgrade. The considered fabrication technology is simpler than that required for full 3D detectors with active edge, but the detector efficiency and radiation hardness critically depend on the columnar electrode overlap and should be carefully evaluated. The first assemblies of these sensors (featuring 2, 3, or 4 columns per pixel) with the ATLAS FEI3 read-out chip have been tested in laboratory. Selected results from the electrical and functional characterization with radioactive sources are here discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Preliminary results of 3D-DDTC pixel detectors for the ATLAS upgrade

3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200um, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110um to 150um. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3) at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am241 gamma-ray sources, charge collection tests with Sr90 beta-source and an overview of preliminary results from the CERN beam test.

0 citations0 reviewsNo code linkedOpen access