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G. -F. Dalla Betta

G. -F. Dalla Betta appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.ins-dethep-ex

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Published work

10 published item(s)

preprint2022arXiv

Beam test results of 25 $μ$m and 35 $μ$m thick FBK UFSD]{Beam test results of 25 $μ$m and 35 $μ$m thick FBK ultra fast silicon detectors

This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 V and 240 V has been obtained for the 25 and 35 $μ$m thick UFSDs, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Novel Sensors for Particle Tracking: a Contribution to the Snowmass Community Planning Exercise of 2021

Five contemporary technologies are discussed in the context of their potential roles in particle tracking for future high energy physics applications. These include sensors of the 3D configuration, in both diamond and silicon, submicron-dimension pixels, thin film detectors, and scintillating quantum dots in gallium arsenide. Drivers of the technologies include radiation hardness, excellent position, vertex, and timing resolution, simplified integration, and optimized power, cost, and material.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The second production of RSD (AC-LGAD) at FBK

In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a continuous gain implant, (ii) a resistive n-cathode and (iii) a dielectric coupling layer deposited on top, guaranteeing a good spatial reconstruction of the hit position while benefiting from the good timing properties of LGADs. We will start from the very promising results of our RSD1 batch in terms of tracking performances and then we will move to the description of the design of the RSD2 run. In particular, the principles driving the sensor design and the specific AC-electrode layout adopted to optimize the signal confinement will be addressed.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). An extended bulk model, by considering impact ionization and deep-level cross-sections variation, was included as well. The model has been validated through the comparison of the simulation findings with experimental measurements carried out at very high fluences (2 10^16 1 MeV equivalent n/cm^2) thus fostering the application of this TCAD approach for the design and optimization of the new generation of silicon detectors to be used in future HEP experiments.

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preprint2016arXiv

Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors

In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector

Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper.

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preprint2012arXiv

Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Development of 3D-DDTC pixel detectors for the ATLAS upgrade

We report on the development of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) pixel detectors fabricated at FBK-irst (Trento, Italy) and oriented to the ATLAS upgrade. The considered fabrication technology is simpler than that required for full 3D detectors with active edge, but the detector efficiency and radiation hardness critically depend on the columnar electrode overlap and should be carefully evaluated. The first assemblies of these sensors (featuring 2, 3, or 4 columns per pixel) with the ATLAS FEI3 read-out chip have been tested in laboratory. Selected results from the electrical and functional characterization with radioactive sources are here discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Preliminary results of 3D-DDTC pixel detectors for the ATLAS upgrade

3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200um, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110um to 150um. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3) at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am241 gamma-ray sources, charge collection tests with Sr90 beta-source and an overview of preliminary results from the CERN beam test.

0 citations0 reviewsNo code linkedOpen access