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Researcher profile

M. Belogolovskii

M. Belogolovskii contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.str-elcond-mat.supr-concond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2016arXiv

Anomalous Inner-Gap Structure in Transport Characteristics of Superconducting Junctions with Degraded Interfaces

Quantitative description of charge transport across tunneling and break-junction devices with novel superconductors encounters some problems not present, or not as severe for traditional superconducting materials. In this work, we explain unexpected features in related transport characteristics as an effect of a degraded nano-scaled sheath at the superconductor surface. Model capturing main aspects of the ballistic charge transport across hybrid superconducting structures with normally-conducting nm-thick interlayers is proposed. The calculations are based on a scattering formalism taking into account Andreev electron-into-hole (and inverse) reflections at normal metal-superconductor interfaces as well as transmission and backscattering events in insulating barriers between the electrodes. Current-voltage characteristics of such devices exhibit a rich diversity of anomalous (from the viewpoint of the standard theory) features, in particular, shift of differential-conductance maximums at gap voltages to lower positions and appearance of well-defined dips instead expected coherence peaks. We compare our results with related experimental data.

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preprint2012arXiv

Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites

Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented Y-Ba-Cu-O (YBCO) thin films with different crystallographic orientations have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii) both were designed and fabricated, and their current-voltage characteristics have been measured. The type (i) junctions exhibited conventional bipolar resistance switching behavior, whereas in other two types the low-resistance state was unsteady and their resistance quickly relaxed to the initial high-resistance state. Physical mechanism based on the oxygen diffusion scenario, explaining such behavior, is discussed.

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preprint2012arXiv

Metastable Resistivity States and Conductivity Fluctuations in Low-doped La$_{1-x}$Ca$_{x}$MnO$_3$ Manganite Single Crystals

Conductivity noise in dc current biased La_{0.82}Ca_{0.18}MnO_{3} single crystals has been investigated in different metastable resistivity states enforced by applying voltage pulses to the sample at low temperatures. Noise measured in all investigated resistivity states is of 1/f-type and its intensity at high temperatures and low dc bias scales as a square of the bias. At liquid nitrogen temperatures for under bias exceeding a threshold value, the behavior of the noise deviates from above quasi- equilibrium modulation noise and depends in a non monotonic way on applied bias. The bias range of nonequilibrium 1/f noise coincides with the range at which the conductance increases linearly with bias voltage. This feature is attributed to a broad continuity of states enabling indirect inelastic tunneling across intrinsic tunnel junctions. The nonequilibrium noise has been ascribed to indirect intrinsic tunneling mechanism while resistivity changes in metastable states to variations in the energy landscape for charge carriers introduced by microcracks created by the pulse procedures employed

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preprint2012arXiv

Universality of transport properties of ultra-thin oxide films

We report low-temperature measurements of current-voltage characteristics for highly conductive Nb/Al-AlOx-Nb junctions with thicknesses of the Al interlayer ranging from 40 to 150 nm and ultra-thin barriers formed by diffusive oxidation of the Al surface. In the superconducting state these devices have revealed a strong subgap current leakage. Analyzing Cooper-pair and quasiparticle currents across the devices, we conclude that the strong suppression of the subgap resistance comparing with conventional tunnel junctions originates from a universal bimodal distribution of transparencies across the Al-oxide barrier proposed earlier by Schep and Bauer. We suggest a simple physical explanation of its source in the nanometer-thick oxide films relating it to strong local barrier-height fluctuations which are generated by oxygen vacancies in thin aluminum oxide tunnel barriers formed by thermal oxidation.

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preprint2011arXiv

Bias Dependent 1/f Conductivity Fluctuations in Low-Doped La$_{1-x}$Ca$_{x}$MnO$_3$ Manganite Single Crystals

Low frequency noise in current biased La$_{0.82}$Ca$_{0.18}$MnO$_{3}$ single crystals has been investigated in a wide temperature range from 79 K to 290 K. Despite pronounced changes in magnetic properties and dissipation mechanisms of the sample with changing temperature, the noise spectra were found to be always of the 1/f type and their intensity (except the lowest temperature studied) scaled as a square of the bias. At liquid nitrogen temperatures and under bias exceeding some threshold value, the behavior of the noise deviates from the quasi-equilibrium modulation noise and starts to depend in a non monotonic way on bias. It has been verified that the observed noise obeys Dutta and Horn model of 1/f noise in solids. The appearance of nonequilibrium 1/f noise and its dependence on bias have been associated with changes in the distribution of activation energies in the underlying energy landscape. These changes have been correlated with bias induced changes in the intrinsic tunneling mechanism dominating dissipation in La$_{0.82}$Ca$_{0.18}$MnO$_{3}$ at low temperatures.

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preprint2010arXiv

Studies of resistance switching effects in metal/YBa2Cu3O7-x interface junctions

Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7-x thin film - PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7-x films in the nano-scale vicinity of the junction interface under applied electrical fields.

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