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Researcher profile

A. Plecenik

A. Plecenik contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.supr-concond-mat.mes-hallcond-mat.mtrl-sciBiological Physicsphysics.med-ph

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Published work

8 published item(s)

preprint2019arXiv

Resonance phenomena in the annular array of underdamped Josephson junctions

Appearance and origin of resonance phenomena have been studied in the annular system of underdamped Josephson junctions. If no fluxon is trapped in the system, dynamics is governed by the motion of fluxon-antifluxon pairs, while if trapped fluxons are present, they can move solely but also simultaneously with the pairs. Locking between the rotating excitations (fluxons and antifluxons) and the Josephson frequency leads to the appearance of zero field steps in the current-voltage characteristics, which can further exhibit branching due to resonance between the rotating excitations and plasma oscillations in their tale. The number of zero field steps and their branching are strongly determined by the total number of excitations present in the system. High resolution analysis further reveals not only some interesting properties of zero field steps, but also shows that the current-voltage characteristics is determined not only by the number, but also by the type of excitations, i.e., whether the dynamics is governed only by the motion of fluxon-antifluxon pairs or the trapped fluxons, or they move simultaneously in the system.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Phase dynamics and IV-characteristics of two parallel stacks of coupled Josephson junctions

Two parallel stacks of coupled Josephson junctions are investigated to clarify the physics of transitions between the rotating and oscillating states and their effect on the IV-characteristics of the system. The detailed study of phase dynamics and bias dependence of the superconducting and diffusion currents allows one to explain all features of simulated IV-characteristics and demonstrate the correspondence in their behavior. The coupling between JJ in the stacks leads to the branching of IV-characteristics and a decrease in the hysteretic region. The crucial role of the diffusion current in the formation of the IV-characteristic of the parallel stacks of coupled Josephson junctions is demonstrated. We discuss the effect of symmetry in a number of junctions in the stacks and show a decrease of the branching in the symmetrical stacks. The observed effects might be useful for development of superconducting electronic devices based on intrinsic Josephson junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Surface transport properties of Fe-based superconductors: The influence of degradation and inhomogeneity

Surface properties of Co-doped BaFe2As2 epitaxial superconducting thin films were inspected by X-ray photoelectron spectroscopy, scanning spreading resistance microscopy (SSRM), and point contact spectroscopy (PCS). It has been shown that surface of Fe-based superconductors degrades rapidly if being exposed to air, what results in suppression of gap-like structure on PCS spectra. Moreover, SSRM measurements revealed inhomogeneous surface conductivity, what is consistent with strong dependence of PCS spectra on contact position. Presented results suggest that fresh surface and small probing area should be assured for surface sensitive measurements like PCS to obtain intrinsic properties of Fe-based superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites

Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented Y-Ba-Cu-O (YBCO) thin films with different crystallographic orientations have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii) both were designed and fabricated, and their current-voltage characteristics have been measured. The type (i) junctions exhibited conventional bipolar resistance switching behavior, whereas in other two types the low-resistance state was unsteady and their resistance quickly relaxed to the initial high-resistance state. Physical mechanism based on the oxygen diffusion scenario, explaining such behavior, is discussed.

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preprint2011arXiv

Direct creation of micro-domains with positive and negative surface potential on hydroxyapatite coatings

A method for the direct patterning of electrostatic potential at the surface of hydroxyapatite is presented here. Micro-domains of surface potential have been created on hydroxyapatite coatings by a 20 keV focused electron beam with minimal alterations of surface chemistry. The success of such approach has been confirmed by Kelvin Probe Force Microscopy measurements, which show that this method is capable of creating micron sized positive and negative local electrostatic potential. The shape and potential difference of these domains were found to depend on the dose of total injected charge from the electron beam as well as the speed with which such charge is injected.

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preprint2010arXiv

Studies of resistance switching effects in metal/YBa2Cu3O7-x interface junctions

Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7-x thin film - PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7-x films in the nano-scale vicinity of the junction interface under applied electrical fields.

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preprint2007arXiv

MgB2 radio-frequency superconducting quantum interference device prepared by atomic force microscope lithography

A new method of preparation of radio-frequency superconducting quantum interference devices on MgB2 thin films is presented. The variable-thickness bridge was prepared by a combination of optical lithography and of the scratching by an atomic force microscope. The critical current of the nanobridge was 0.35 uA at 4.2 K. Non-contact measurements of the current-phase characteristics and of the critical current vs. temperature have been investigated on our structures.

0 citations0 reviewsNo code linkedOpen access
preprint2001arXiv

Phonons in MgB2 by Polarized Raman Scattering on Single Crystals

The paper presents detailed Raman scattering study of the unusually broad E2g phonon mode in MgB2 crystal. For the first time, it is shown by the polarized Raman scattering on few-micron-size crystallites with natural faces that the observed broad Raman feature really does obey the selection rules of an E2g mode. Raman spectra on high quality polycrystalline superconducting MgB2 wires reveal a very symmetric E2g phonon line near 615 1/cm with the room temperature linewidth of 260 1/cm only. Additional scattering of different polarization dependence, observed in certain crystallites is interpreted as weighted phonon density of states induced by lattice imperfections.

0 citations0 reviewsNo code linkedOpen access