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B. Dolgin

B. Dolgin contributes to research discovery and scholarly infrastructure.

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preprint2016arXiv

Conductivity fluctuations in proton-implanted ZnO microwires

The electric noise can be an important limitation for applications of conducting elements of size in the nanometer range. The intrinsic electrical noise of prospective materials for opto-spintronics applications like ZnO has not been characterized yet. In this study we have investigated the conductivity fluctuations in 10~nm thick current paths produced by proton implantation of ZnO microwires at room temperature. The voltage noise under a constant dc current bias in undoped as well as in Li-doped microwires is characterized by $1/f^a$ power spectra with $a \sim 1$. The noise intensity scales with the square of the bias current pointing out to bias-independent resistivity fluctuations as a source of the observed noise. The normalized power spectral density appears inversely proportional to the number of carriers in the probed sample volume, in agreement with the phenomenological Hooge law. For the proton-implanted ZnO microwire and at 1~Hz we obtain a normalized power spectral density as low as $\sim 10^{-11}~$Hz$^{-1}$.

preprint2012arXiv

Metastable Resistivity States and Conductivity Fluctuations in Low-doped La$_{1-x}$Ca$_{x}$MnO$_3$ Manganite Single Crystals

Conductivity noise in dc current biased La_{0.82}Ca_{0.18}MnO_{3} single crystals has been investigated in different metastable resistivity states enforced by applying voltage pulses to the sample at low temperatures. Noise measured in all investigated resistivity states is of 1/f-type and its intensity at high temperatures and low dc bias scales as a square of the bias. At liquid nitrogen temperatures for under bias exceeding a threshold value, the behavior of the noise deviates from above quasi- equilibrium modulation noise and depends in a non monotonic way on applied bias. The bias range of nonequilibrium 1/f noise coincides with the range at which the conductance increases linearly with bias voltage. This feature is attributed to a broad continuity of states enabling indirect inelastic tunneling across intrinsic tunnel junctions. The nonequilibrium noise has been ascribed to indirect intrinsic tunneling mechanism while resistivity changes in metastable states to variations in the energy landscape for charge carriers introduced by microcracks created by the pulse procedures employed

preprint2011arXiv

Bias Dependent 1/f Conductivity Fluctuations in Low-Doped La$_{1-x}$Ca$_{x}$MnO$_3$ Manganite Single Crystals

Low frequency noise in current biased La$_{0.82}$Ca$_{0.18}$MnO$_{3}$ single crystals has been investigated in a wide temperature range from 79 K to 290 K. Despite pronounced changes in magnetic properties and dissipation mechanisms of the sample with changing temperature, the noise spectra were found to be always of the 1/f type and their intensity (except the lowest temperature studied) scaled as a square of the bias. At liquid nitrogen temperatures and under bias exceeding some threshold value, the behavior of the noise deviates from the quasi-equilibrium modulation noise and starts to depend in a non monotonic way on bias. It has been verified that the observed noise obeys Dutta and Horn model of 1/f noise in solids. The appearance of nonequilibrium 1/f noise and its dependence on bias have been associated with changes in the distribution of activation energies in the underlying energy landscape. These changes have been correlated with bias induced changes in the intrinsic tunneling mechanism dominating dissipation in La$_{0.82}$Ca$_{0.18}$MnO$_{3}$ at low temperatures.