Researcher profile

M. A. Kaliteevski

M. A. Kaliteevski contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2013arXiv

Nonlinear Terahertz Emission in Semiconductor Microcavities

We consider the nonlinear terahertz emission by the system of cavity polaritons in the regime of polariton lasing. To account for the quantum nature of terahertz-polariton coupling we use the Lindblad master equation approach and demonstrate that quantum microcavities reveal rich variety of the nonlinear phenomena in terahertz range, including bistability, short THz pulse generation and THz switching.

preprint2013arXiv

Rashba plasmon polaritons in semiconductor heterostructures

We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal and asymmetric quantum well. Due to the Rashba spin-orbit interaction, mimina of dispersion relation for electrons in conduction band are shifted with respect to the maximum of dispersion dependence for holes in $Γ$-point. When energy and momentum intervals between extrema in dispersion relations of electrons and holes match dispersion relation of plasmons, indirect radiative transition can amplify the plasmons; excitation of leaky modes is forbidden due to the selection rules. Efficiency of the indirect radiative transition is calculated and design of the structure is analysed.

preprint2012arXiv

Bosonic Cascade Laser

We propose a concept of a quantum cascade laser based on transitions of bosonic quasiparticles (excitons and exciton-polaritons) in a parabolic potential trap in a semiconductor microcavity. This laser would emit terahertz radiation due to bosonic stimulation of excitonic transitions. Dynamics of a bosonic cascade is strongly different from the dynamics of a conventional fermionic cascade laser. We show that populations of excitonic ladders are parity-dependent and quantized if the laser operates without an external terahertz cavity.

preprint2010arXiv

Stimulated emission of terahertz radiation by semiconductor microcavities

We show that planar semiconductor microcavities in the strong coupling regime can be used as sources of stimulated terahertz (THz) radiation. Emitted THz photons would have a frequency of the spliting of the cavity polariton modes. The optical transition between upper and lower polariton branches is allowed due to mixing of the upper polariton state with one of excited exciton states. This transition is stimulated in the polariton laser regime.