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Source author record

Luqiao Liu

Luqiao Liu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.dis-nnEmerging Technologies

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Published work

15 published item(s)

preprint2022arXiv

Efficient Spin-Orbit Torques in an Antiferromagnetic Insulator with Tilted Easy Plane

Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient spin-orbit-torque-induced switching is however still challenging due to the complicated interactions from different sublattices. Meanwhile, because of the diminishing magnetic susceptibility, the nature and the magnitude of current-induced magnetic dynamics remain poorly characterized in antiferromagnets, whereas spurious effects further complicate experimental interpretations. In this work, by growing a thin film antiferromagnetic insulator, α-Fe2O3, along its non-basal plane orientation, we realize a configuration where an injected spin current can robustly rotate the Néel vector within the tilted easy plane, with an efficiency comparable to that of classical ferromagnets. The spin-orbit torque effect stands out among other competing mechanisms and leads to clear switching dynamics. Thanks to this new mechanism, in contrast to the usually employed orthogonal switching geometry, we achieve bipolar antiferromagnetic switching by applying positive and negative currents along the same channel, a geometry that is more practical for device applications. By enabling efficient spin-orbit torque control on the antiferromagnetic ordering, the tilted easy plane geometry introduces a new platform for quantitatively understanding switching and oscillation dynamics in antiferromagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Manipulation of coupling and magnon transport in magnetic metal-insulator hybrid structures

Ferromagnetic metals and insulators are widely used for generation, control and detection of magnon spin signals. Most magnonic structures are based primarily on either magnetic insulators or ferromagnetic metals, while heterostructures integrating both of them are less explored. Here, by introducing a Pt/yttrium iron garnet (YIG)/permalloy (Py) hybrid structure grown on Si substrate, we studied the magnetic coupling and magnon transmission across the interface of the two magnetic layers. We found that within this structure, Py and YIG exhibit an antiferromagnetic coupling field as strong as 150 mT, as evidenced by both the vibrating-sample magnetometry and polarized neutron reflectometry measurements. By controlling individual layer thicknesses and external fields, we realize parallel and antiparallel magnetization configurations, which are further utilized to control the magnon current transmission. We show that a magnon spin valve with an ON/OFF ratio of ~130% can be realized out of this multilayer structure at room temperature through both spin pumping and spin Seebeck effect experiments. Thanks to the efficient control of magnon current and the compatibility with Si technology, the Pt/YIG/Py hybrid structure could potentially find applications in magnon-based logic and memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strong Coupling between Microwave Photons and Nanomagnet Magnons

Coupled microwave photon-magnon hybrid systems offer promising applications by harnessing various magnon physics. At present, in order to realize high coupling strength between the two subsystems, bulky ferromagnets with large spin numbers are utilized, which limits their potential applications for scalable quantum information processing. In this paper, by enhancing single spin coupling strength using lithographically defined superconducting resonators, we report high cooperativities between a resonator mode and a Kittel mode in nanometer thick Permalloy wires. The on-chip, lithographically scalable, and superconducting quantum circuit compatible design provides a direct route towards realizing hybrid quantum systems with nanomagnets, whose coupling strength can be precisely engineered and dynamic properties can be controlled by various mechanisms derived from spintronic studies.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Magnetic domain wall based synaptic and activation function generator for neuromorphic accelerators

Magnetic domain walls are information tokens in both logic and memory devices, and hold particular interest in applications such as neuromorphic accelerators that combine logic in memory. Here, we show that devices based on the electrical manipulation of magnetic domain walls are capable of implementing linear, as well as programmable nonlinear, functions. Unlike other approaches, domain-wall-based devices are ideal for application to both synaptic weight generators and thresholding in deep neural networks. Prototype micrometer-size devices operate with 8 ns current pulses and the energy consumption required for weight modulation is < 16 pJ. Both speed and energy consumption compare favorably to other synaptic nonvolatile devices, with the expected energy dissipation for scaled 20 nm devices close to that of biological neurons.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Current-induced domain wall motion in compensated ferrimagnet

Due to the difficulty in detecting and manipulating magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. In this work, by employing heavy metal/rare earth-transition metal alloy bilayers, we experimentally studied current-induced domain wall dynamics in an antiferromagnetically coupled system. We show that the current-induced domain wall mobility reaches a maximum close to the angular momentum compensation. With experiment and modelling, we further reveal the internal structures of domain walls and the underlying mechanisms for their fast motion. We show that the chirality of the ferrimagnetic domain walls remains the same across the compensation points, suggesting that spin orientations of specific sublattices rather than net magnetization determine Dzyaloshinskii-Moriya interaction in heavy metal/ferrimagnet bilayers. The high current-induced domain wall mobility and the robust domain wall chirality in compensated ferrimagnetic material opens new opportunities for high-speed spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin-Orbit Torque Efficiency in Compensated Ferrimagnetic Cobalt-Terbium Alloys

Despite the potential advantages of information storage in antiferromagnetically coupled materials, it remains unclear whether one can control the magnetic moment orientation efficiently because of the cancelled magnetic moment. Here, we report spin-orbit torque induced magnetization switching of ferrimagnetic Co1-xTbx films with perpendicular magnetic anisotropy. Current induced switching is demonstrated in all of the studied film compositions, including those near the magnetization compensation point. The spin-orbit torque induced effective field is further quantified in the domain wall motion regime. A divergent behavior that scales with the inverse of magnetic moment is confirmed close to the compensation point, which is consistent with angular momentum conservation. Moreover, we also quantify the Dzyaloshinskii-Moriya interaction energy in the Ta/Co1-xTbx system and we find that the energy density increases as a function of the Tb concentration. The demonstrated spin-orbit torque switching, in combination with the fast magnetic dynamics and minimal net magnetization of ferrimagnetic alloys, promises spintronic devices that are faster and with higher density than traditional ferromagnetic systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin-Polarized Tunneling Study on Spin-Momentum Locking in the Topological Insulators

We demonstrate that the charge-spin conversion efficiency of topological insulators (TI) can be experimentally determined by injecting spin-polarized tunneling electrons into a TI. Through a comparative study between bismuth selenide and bismuth antimony telluride, we verified the topological-surface-state origin of the observed giant spin signals. By injecting energetic electrons into bismuth selenide, we further studied the energy dependence of the effective spin polarization at the TI surface. The experimentally verified large spin polarization, as well as our calculations, provides new insights into optimizing TI materials for near room-temperature spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Gate voltage modulation of spin-Hall-torque-driven magnetic switching

Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA). Spin transfer torque is in widespread development as the write mechanism for next-generation magnetic memory, while VCMA offers the potential of even better energy performance due to smaller Ohmic losses. Here we introduce a 3-terminal magnetic tunnel junction (MTJ) device that combines both of these mechanisms to achieve new functionality: gate-voltage-modulated spin torque switching. This gating makes possible both more energy-efficient switching and also improved architectures for memory and logic applications, including a simple approach for making magnetic memories with a maximum-density cross-point geometry that does not require a control transistor for every MTJ.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic oscillations driven by the spin Hall effect in 3-terminal magnetic tunnel junction devices

We show that direct current in a tantalum microstrip can induce steady-state magnetic oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE). The oscillations are detected electrically via a magnetic tunnel junction (MTJ) contacting the nanomagnet. The oscillation frequency can be controlled using the MTJ bias to tune the magnetic anisotropy. In this 3-terminal device the SHE torque and the MTJ bias therefore provide independent controls of the oscillation amplitude and frequency, enabling new approaches for developing tunable spin torque nano-oscillators.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Resonance Measurement of Nonlocal Spin Torque in a Three-Terminal Magnetic Device

A pure spin current generated within a nonlocal spin valve can exert a spin transfer torque on a nanomagnet. This nonlocal torque enables new design schemes for magnetic memory devices that do not require the application of large voltages across tunnel barriers that can suffer electrical breakdown. Here we report a quantitative measurement of this nonlocal spin torque using spin-torque-driven ferromagnetic resonance. Our measurement agrees well with the prediction of an effective circuit model for spin transport. Based on this model, we suggest strategies for optimizing the strength of nonlocal torque.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Review and Analysis of Measurements of the Spin Hall Effect in Platinum

Several different experimental techniques have been used in efforts to measure the spin Hall conductivity and the spin Hall angle in Pt samples at room temperature, with results that disagree by more than a factor of 20, with spin Hall conductivities from 2.4 x 10^4 to 5.1 x 10^5 [hbar/(2e)] (Ohm-m)^-1 and spin Hall angles from 0.0037 to 0.08. We review this work, and analyze possible reasons for the discrepancies. We explain that the smallest values for the spin Hall angle that have been reported, based on measurements of lateral permalloy/copper/platinum devices, are incorrect because the original analyses did not properly take into account that copper layers in these devices will shunt charge current flowing through adjacent platinum wires, thereby greatly reducing the size of the spin-Hall-related signals. We suggest that differences between the results for the spin Hall angle found by other experimental techniques are primarily a consequence of different assumptions about the value of the spin diffusion length in Pt. We present a new measurement of the spin diffusion length in Pt within sputtered Pt/permalloy bilayer thin films at room temperature, finding 1.4 \pm 0.3 nm, a much smaller value than has generally been assumed previously. With this value for the spin diffusion length, the previously-discordant results can be brought into much better agreement, with the result that the spin Hall conductivities are (1.4 - 3.4) x 10^5 [hbar/(2e)] (Ohm-m)^-1 and the spin Hall angles are greater than 0.05. These values are sufficiently large that the spin Hall effect in Pt can be used to generate spin currents and spin transfer torques strong enough for efficient manipulation of magnetic moments in adjacent ferromagnetic layers.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin torque switching with the giant spin Hall effect of tantalum

We report a giant spin Hall effect (SHE) in β-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that can be superior to existing technologies. We quantify this SHE by three independent methods and demonstrate spin-torque (ST) switching of both out-of-plane and in-plane magnetized layers. We implement a three-terminal device that utilizes current passing through a low impedance Ta-ferromagnet bilayer to effect switching of a nanomagnet, with a higher-impedance magnetic tunnel junction for read-out. The efficiency and reliability of this device, together with its simplicity of fabrication, suggest that this three-terminal SHE-ST design can eliminate the main obstacles currently impeding the development of magnetic memory and non-volatile spin logic technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin transfer torque devices utilizing the giant spin Hall effect of tungsten

We report a giant spin Hall effect (SHE) in β-W thin films. Using spin torque induced ferromagnetic resonance with a β-W/CoFeB bilayer microstrip we determine the spin Hall angle to be |θ|=0.30\pm0.02, large enough for an in-plane current to efficiently reverse the orientation of an in-plane magnetized CoFeB free layer of a nanoscale magnetic tunnel junction adjacent to a thin β-W layer. From switching data obtained with such 3-terminal devices we independently determine |θ|=0.33\pm0.06. We also report variation of the spin Hall switching efficiency with W layers of different resistivities and hence of variable (α and β) phase composition.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Magnetic switching by spin torque from the spin Hall effect

The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and modeling, that in a Pt/Co bilayer with perpendicular magnetic anisotropy the SHE can produce a spin transfer torque that is strong enough to efficiently rotate and reversibly switch the Co magnetization, thereby providing a new strategy both to understand the SHE and to manipulate magnets. We suggest that the SHE torque can have a similarly strong influence on current-driven magnetic domain wall motion in Pt/ferromagnet multilayers. We estimate that in optimized devices the SHE torque can switch magnetic moments using currents comparable to those in magnetic tunnel junctions operated by conventional spin-torque switching, meaning that the SHE can enable magnetic memory and logic devices with similar performance but simpler architecture than the current state of the art.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin Torque Ferromagnetic Resonance Induced by the Spin Hall Effect

We demonstrate that the spin Hall effect in a thin film with strong spin-orbit scattering can excite magnetic precession in an adjacent ferromagnetic film. The flow of alternating current through a Pt/NiFe bilayer generates an oscillating transverse spin current in the Pt, and the resultant transfer of spin angular momentum to the NiFe induces ferromagnetic resonance (FMR) dynamics. The Oersted field from the current also generates an FMR signal but with a different symmetry. The ratio of these two signals allows a quantitative determination of the spin current and the spin Hall angle.

0 citations0 reviewsNo code linkedOpen access