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Researcher profile

Luis L. Bonilla

Luis L. Bonilla contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2014arXiv

Thermo-electromechanical effects in relaxed shape graphene and bandstructures of graphene quantum dots

We investigate the in-plane oscillations of the relaxed shape graphene due to externally applied tensile edge stress along both the armchair and zigzag directions. We show that the total elastic energy density is enhanced with temperature for the case of applied tensile edge stress along the zigzag direction. Thermo-electromechanical effects are treated via pseudomorphic vector potentials to analyze the influence of these coupled effects on the bandstructures of bilayer graphene quantum dots (QDs). We report that the level crossing between ground and first excited states in the localized edge states can be achieved with the accessible values of temperature. In particular, the level crossing point extends to higher temperatures with decreasing values of externally applied tensile edge stress along the armchair direction. This kind of level crossings is absent in the states formed at the center of the graphene sheet due to the presence of three fold symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Coupled multiphysics, barrier localization, and critical radius effects in embedded nanowire superlattices

The new contribution of this paper is to develop a cylindrical representation of an already known multiphysics model for embedded nanowire superlattices (NWSLs) of wurtzite structure that includes a coupled, strain dependent 8-band $\mathbf{k\cdot p}$ Hamiltonian in cylindrical coordinates and investigate the influence of coupled piezo-electromechanical effects on the barrier localization and critical radius in such NWSLs. The coupled piezo-electromechanical model for semiconductor materials takes into account the strain, piezoelectric effects and spontaneous polarization. Based on the developed 3D model, the band structures of electrons (holes) obtained from results of modeling in Cartesian coordinates are in good agreement with those values obtained from our earlier developed 2D model in cylindrical coordinates. Several parameters such as lattice mismatch, piezo-electric fields, valence and conduction band offsets at the heterojunction of $\mathrm{Al_xGa_{1-x}N/GaN}$ supperlattice can be varied as a function of the Al mole fraction. When the band offsets at the heterojunction of $\mathrm{Al_xGa_{1-x}N/GaN}$ are very small and the influence of the piezo-electromechanical effects can be minimized, then the barrier material can no longer be treated as an infinite potential well. In this situation, it is possible to visualize the penetration of the Bloch wave function into the barrier material that provides an estimation of critical radii of NWSLs. In this case, the NWSLs can act as inversion layers. Finally, we investigate the influence of symmetry of the square and cylindrical NWSLs on the band structures of electrons in the conduction band.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrical control of phonon mediated spin relaxation rate in semiconductor quantum dots: the Rashba vs the Dresselhaus spin-orbit couplings

In symmetric quantum dots (QDs), it is well known that the spin-hot spot (i.e., the cusp-like structure due to the presence of degeneracy near the level or anticrossing point) is present for the pure Rashba case but is absent for the pure Dresselhaus case [Phys. Rev. Lett. 95, 076805 (2005)]. Since the Dresselhaus spin-orbit coupling dominates over the Rashba spin-orbit coupling in GaAs and GaSb QDs, it is important to find the exact location of the spin-hot spot or the cusp-like structure even for the pure Dresselhaus case. In this paper, for the first time, we present analytical and numerical results that show that the spin-hot spot can also be seen for the pure Dresselhaus spin-orbit coupling case by inducing large anisotropy through external gates. At or nearby the spin-hot spot, the spin transition rate enhances and the decoherence time reduces by several orders of magnitude compared to the case with no spin-hot spot. Thus one should avoid such locations when designing QD spin based transistors for the possible implementation in quantum logic gates, solid state quantum computing and quantum information processing. It is also possible to extract the exact experimental data (Phys. Rev. Lett. 100, 046803 (2008)) for the phonon mediated spin-flip rates from our developed theoretical model.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin transition rates in nanowire superlattices: Rashba spin-orbit coupling effects

We investigate the influence of Rashba spin-orbit coupling in a parabolic nanowire modulated by longitudinal periodic potential. The modulation potential can be obtained from realistically grown supperlattices (SLs). Our study shows that the Rashba spin-orbit interaction induces the level crossing point in the parabolic nanowire SLs. We estimate large anticrossing width (approximately 117 $μeV$) between singlet-triplet states. We study the phonon and electromagnetic field mediated spin transition rates in the parabolic nanowire SLs. We report that the phonon mediated spin transition rate is several order of magnitude larger than the electromagnetic field mediated spin transition rate. Based on the Feynman disentangling technique, we find the exact spin transition probability. For the case wave vector $k=0$, we report that the transition probability can be tuned in the form of resonance at fixed time interval. For the general case ($k\neq 0$), we solve the Riccati equation and find that the arbitrary values of $k$ induces the damping in the transition probability. At large value of Rashba spin-orbit coupling coefficients for ($k\neq 0$), spin transition probability freezes.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Temperature-dependent dynamical nuclear polarization bistabilities in double quantum dots in the spin-blockade regime

The interplay of dynamical nuclear polarization (DNP) and leakage current through a double quantum dot in the spin-blockade regime is analyzed. A finite DNP is built up due to a competition between hyperfine (HF) spin-flip transitions and another inelastic escape mechanism from the triplets, which block transport. We focus on the temperature dependence of the DNP for zero energy-detuning (i.e. equal electrostatic energy of one electron in each dot and a singlet in the right dot). Our main result is the existence of a transition temperature, below which the DNP is bistable, so a hysteretic leakage current versus external magnetic field B appears. This is studied in two cases: (i) Close to the crossing of the three triplet energy levels near B=0, where spin-blockade is lifted due to the inhomogeneity of the effective magnetic field from the nuclei. (ii) At higher B-fields, where the two spin-polarized triplets simultaneously cross two different singlet energy levels. We develop simplified models leading to different transition temperatures T_TT and T_ST for the crossing of the triplet levels and the singlet-triplet level crossings, respectively. We find T_TT analytically to be given solely by the HF couplings, whereas T_ST depends on various parameters and T_ST>T_TT. The key idea behind the existence of the transition temperatures at zero energy-detuning is the suppression of energy absorption compared to emission in the inelastic HF transitions. Finally, by comparing the rate equation results with Monte Carlo simulations, we discuss the importance of having both HF interaction and another escape mechanism from the triplets to induce a finite DNP.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Anisotropic effects and phonon induced spin relaxation in gate-controlled semiconductor quantum dots

In this paper, a detailed analysis of anisotropic effects on the phonon induced spin relaxation rate in III-V semiconductor quantum dots (QDs) is carried out. We show that the accidental degeneracy due to level crossing between the first and second excited states of opposite electron spin states in both isotropic and anisotropic QDs can be manipulated with the application of externally applied gate potentials. In particular, anisotropic gate potentials enhance the phonon mediated spin-flip rate and reduce the cusp-like structure to lower magnetic fields, in addition to the lower QDs radii in III-V semiconductor QDs. In InAs QDs, only the Rashba spin-orbit coupling contributes to the phonon induced spin relaxation rate. However, for GaAs QDs, the Rashba spin-orbit coupling has a contribution near the accidental degeneracy point and the Dresselhaus spin-orbit coupling has a contribution below and above the accidental degeneracy point in the manipulation of phonon induced spin relaxation rates in QDs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Charge transport in a superlattice: a numerical study using moment methods

A semiclassical model of charge transport in a semiconductor superlattice is solved, using moments in the wavenumber direction and finite elements in the spatial direction (first order). The selection of numerical methods guarantees the conservation of current while allowing for high accuracy results. When a dc voltage bias is held between the ends of the sample, self-sustaining oscillations of the current through the superlattice are observed in a narrow range of voltages. the calculated solution displayed the expected accuracy: Spectral convergence in the number of moments used, and first-order convergence in the number of grid-cells. This result paves the way for higher-order methods (in the spatial direction) and the numerical solution of more complex models of charge transport including quantum models based on the Wigner function.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Effects of noise on hysteresis and resonance width in graphene and nanotubes resonators

We investigate the role that noise plays in the hysteretic dynamics of a suspended nanotube or a graphene sheet subject to an oscillating force. We find that not only the size but also the position of the hysteresis region in these systems can be controlled by noise. We also find that nano-resonators act as noise rectifiers: by increasing the noise in the setup, the resonance width of the characteristic peak in these systems is reduced and, as a result, the quality factor is increased.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots

We study the anisotropic orbital effect in the electric field tunability of the phonon induced spin-flip rate in quantum dots (QDs). Our study shows that anisotropic gate potential enhances the spin-flip rate and reduces the level crossing point to a lower quantum dot radius due to the suppression of the Land$\acute{e}$ g-factor towards bulk crystal. In the range of $10^4-10^6$ V/cm, the electric field tunability of the phonon induced spin-flip rate can be manipulated through strong Dresselhaus spin-orbit coupling. These results might assist the development of a spin based solid state quantum computer by manipulating phonon induced spin-flip rate through spin-orbit coupling with the application of anisotropic gate potential in a regime where the g-factor changes its sign.

0 citations0 reviewsNo code linkedOpen access