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Roderick Melnik

Roderick Melnik contributes to research discovery and scholarly infrastructure.

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Published work

23 published item(s)

preprint2026arXiv

From Queues to Crowd Flows: Reflected Diffusion Limits for Controlled Agents

We establish a diffusion approximation for a class of multi-agent controlled queueing systems, demonstrating their convergence to a system of interacting reflected Ornstein--Uhlenbeck (OU) processes. The limiting process captures essential behavioral features of the underlying stochastic dynamics, including goal-directed motion, inter-agent repulsion, and reflection at domain boundaries. This result provides a rigorous analytical framework for approximating constrained queueing networks and crowd motion models, offering tractable characterizations of their steady-state behavior and transient dynamics under large-scale regimes. We further illustrate the theoretical findings through two numerical examples. The first example considers a crowd dynamics scenario, modeling interacting agents navigating within a confined domain, while the second focuses on a neural population model that describes stochastic activity evolution under competition and bounded constraints. These experiments validate the convergence predicted by the diffusion approximation and demonstrate how discrete stochastic systems with reflection and interaction mechanisms approach their continuous reflected OU limits, offering both physical and biosocial interpretations of the theory.

preprint2022arXiv

Coupled effects of channels and synaptic dynamics in stochastic modelling of healthy and Parkinson's-disease-affected brains

Our brain is a complex information processing network in which the nervous system receives information from the environment to quickly react to incoming events or learns from experience to sharp our memory. In the nervous system, the brain states translate collective activities of neurons interconnected via synaptic connections. In this paper, we study coupled effects of channels and synaptic dynamics under the stochastic influence of healthy brain cells with applications to Parkinson's disease (PD). In particular, we investigate the effects of random inputs in a subthalamic nucleus (STN) cell membrane potential model. The STN bursting phenomena and parkinsonian hypokinetic motor symptoms are closely connected, as electrical and chemical maneuvers modulating STN bursts are sufficient to ameliorate or mimic parkinsonian motor deficits. Deep brain stimulation (DBS) of the STN is an important surgical technique used in the treatment to improve PD symptoms. Our numerical results show that the random inputs strongly affect the spiking activities of the STN neuron not only in the case of healthy cells but also in the case of PD cells in the presence of DBS treatment. Specifically, the existence of a random refractory period together with random input current in the system may substantially influence an increased irregularity of spike trains of the output neurons.

preprint2022arXiv

Coupled stochastic systems of Skorokhod type: well-posedness of a mathematical model and its applications

Population dynamics with complex biological interactions, accounting for uncertainty quantification, is critical for many application areas. However, due to the complexity of biological systems, the mathematical formulation of the corresponding problems faces the challenge that the corresponding stochastic processes should, in most cases, be considered in bounded domains. We propose a model based on a coupled system of reflecting Skorokhod-type stochastic differential equations with jump-like exit from a boundary. The setting describes the population dynamics of active and passive populations. As main working techniques, we use compactness methods and Skorokhod's representation of solutions to SDEs posed in bounded domains to prove the well-posedness of the system. This functional setting is a new point of view in the field of modelling and simulation of population dynamics. We provide the details of the model, as well as representative numerical examples, and discuss the applications of a Wilson-Cowan-type system, modelling the dynamics of two interacting populations of excitatory and inhibitory neurons. Furthermore, the presence of random input current, reflecting factors together with Poisson jumps, increases firing activity in neuronal systems.

preprint2022arXiv

Effects of noise on leaky integrate-and-fire neuron models for neuromorphic computing applications

Artificial neural networks (ANNs) have been extensively used for the description of problems arising from biological systems and for constructing neuromorphic computing models. The third generation of ANNs, namely, spiking neural networks (SNNs), inspired by biological neurons enable a more realistic mimicry of the human brain. A large class of the problems from these domains is characterized by the necessity to deal with the combination of neurons, spikes and synapses via integrate-and-fire neuron models. Motivated by important applications of the integrate-and-fire of neurons in neuromorphic computing for bio-medical studies, the main focus of the present work is on the analysis of the effects of additive and multiplicative types of random input currents together with a random refractory period on a leaky integrate-and-fire (LIF) synaptic conductance neuron model. Our analysis is carried out via Langevin stochastic dynamics in a numerical setting describing a cell membrane potential. We provide the details of the model, as well as representative numerical examples, and discuss the effects of noise on the time evolution of the membrane potential as well as the spiking activities of neurons in the LIF synaptic conductance model scrutinized here. Furthermore, our numerical results demonstrate that the presence of a random refractory period in the LIF synaptic conductance system may substantially influence an increased irregularity of spike trains of the output neuron.

preprint2022arXiv

Effects of random inputs and short-term synaptic plasticity in a LIF conductance model for working memory applications

Working memory (WM) has been intensively used to enable the temporary storing of information for processing purposes, playing an important role in the execution of various cognitive tasks. Recent studies have shown that information in WM is not only maintained through persistent recurrent activity but also can be stored in activity-silent states such as in short-term synaptic plasticity (STSP). Motivated by important applications of the STSP mechanisms in WM, the main focus of the present work is on the analysis of the effects of random inputs on a leaky integrate-and-fire (LIF) synaptic conductance neuron under STSP. Furthermore, the irregularity of spike trains can carry the information about previous stimulation in a neuron. A LIF conductance neuron with multiple inputs and coefficient of variation (CV) of the inter-spike-interval (ISI) can bring an output decoded neuron. Our numerical results show that an increase in the standard deviations in the random input current and the random refractory period can lead to an increased irregularity of spike trains of the output neuron.

preprint2022arXiv

Pattern alternations induced by nonlocal interactions

Pattern formation is a visual understanding of the dynamics of complex systems. Patterns arise in many ways, such as the segmentation of animals, bacterial colonies during growth, vegetation, chemical reactions, etc. In most cases, the long-range diffusion occurs, and the usual reaction-diffusion (RD) model can not capture such phenomena. The nonlocal RD model, on the other hand, can fill the gap. Analytical derivation of the amplitude equations (AE) for an RD system is a valuable tool to predict the pattern selections, in particular, the stationary Turing patterns when they occur. In this paper, we analyze the conditions for the Turing bifurcation for the nonlocal model and also derive the AE for the nonlocal RD model near the Turing bifurcation threshold to describe the reason behind the pattern selections. This derivation of the AE is not only limited to the nonlocal prey-predator model, as shown in our representative example but also can be applied to other nonlocal models near the Turing bifurcation threshold. The analytical prediction agrees with numerical simulation near the Turing bifurcation threshold. Moreover, the analytical and numerical results fit each other well even more remote from the Turing bifurcation threshold for the small values of the nonlocal parameter but not for the higher values.

preprint2020arXiv

The topology of higher-order complexes associated with brain-function hubs in human connectomes

Higher-order connectivity in complex systems described by simplexes of different orders provides a geometry for simplex-based dynamical variables and interactions. Simplicial complexes that constitute a functional geometry of the human connectome can be crucial for the brain complex dynamics. In this context, the best-connected brain areas, designated as hub nodes, play a central role in supporting integrated brain function. Here, we study the structure of simplicial complexes attached to eight global hubs in the female and male connectomes and identify the core networks among the affected brain regions. These eight hubs (Putamen, Caudate, Hippocampus and Thalamus-Proper in the left and right cerebral hemisphere) are the highest-ranking according to their topological dimension, defined as the number of simplexes of all orders in which the node participates. Furthermore, we analyse the weight-dependent heterogeneity of simplexes. We demonstrate changes in the structure of identified core networks and topological entropy when the threshold weight is gradually increased. These results highlight the role of higher-order interactions in human brain networks and provide additional evidence for (dis)similarity between the female and male connectomes.

preprint2014arXiv

Gate control of Berry phase in III-V semiconductor quantum dots

Berry phase in semiconductor quantum dots (QDs) can be induced by moving the dots adiabatically in a closed loop with the application of the distortion potential in the lateral direction. We show that the Berry phase is highly sensitive to the electric fields arising from the interplay between the Rashba and the Dresselhaus spin-orbit couplings. We report that the accumulated Berry phase can be induced from other available quantum state that are only differed by one quantum number of the same spin state. The sign change in the g-factor due to the penetration of the Bloch wavefunctions into the barrier material can be reflected in the Berry phase. We solve the time dependent Schr$\mathrm{\ddot{o}}$dinger equation and investigate the evolution of the spin dynamics during the adiabatic movement of the QDs in the 2D plane. Our results might open the possibilities of building a topological quantum dot quantum computer where the Berry phase can be engineered and can be manipulated with the application of the spin-orbit couplings through gate controlled electric fields.

preprint2014arXiv

Geometric spin manipulation in semiconductor quantum dots

We propose a method to flip the spin completely by an adiabatic transport of quantum dots. We show that it is possible to flip the spin by inducing a geometric phase on the spin state of a quantum dot. We estimate the geometric spin flip time (approximately 2 pico-sec) which turned out to be much shorter than the experimentally reported decoherence time (approx. 100 nano-sec) that would provide an alternative means of fliping the spin before reaching decoherence. It is important that both the Rashba coupling and the Dresselhaus coupling are present for inducing a phase necessary for spin flip. If one of them is absent, the induced phase is trivial and irrelevant for spin-flip.

preprint2014arXiv

Spin relaxation in strained graphene nanoribbons: armchair vs zigzag edges

We study the influence of ripple waves originating from the electromechanical effects on spin relaxation caused by electromagnetic fields in armchair and zigzag graphene nanoribbons (GNRs). By utilizing analytical expressions supported by numerical simulations, we show that it is possible to tune the spin flip behaviors ON and OFF due to ripple waves in GNRs for potential applications in straintronic devices. This finding is similar to recently made observations on the design of spintronic devices in III-V semiconductor quantum dots, where the sign change in the effective Land$\mathrm{\acute{e}}$ $g$-factor can be engineered with the application of gate controlled electric fields. In particular, we show that the tuning of spin extends to larger widths for the armchair GNRs than for the zigzag GNRs. Here we also report that the relaxation rate vanishes like $L^5$.

preprint2014arXiv

Thermo-electromechanical effects in relaxed shape graphene and bandstructures of graphene quantum dots

We investigate the in-plane oscillations of the relaxed shape graphene due to externally applied tensile edge stress along both the armchair and zigzag directions. We show that the total elastic energy density is enhanced with temperature for the case of applied tensile edge stress along the zigzag direction. Thermo-electromechanical effects are treated via pseudomorphic vector potentials to analyze the influence of these coupled effects on the bandstructures of bilayer graphene quantum dots (QDs). We report that the level crossing between ground and first excited states in the localized edge states can be achieved with the accessible values of temperature. In particular, the level crossing point extends to higher temperatures with decreasing values of externally applied tensile edge stress along the armchair direction. This kind of level crossings is absent in the states formed at the center of the graphene sheet due to the presence of three fold symmetry.

preprint2013arXiv

Coupled multiphysics, barrier localization, and critical radius effects in embedded nanowire superlattices

The new contribution of this paper is to develop a cylindrical representation of an already known multiphysics model for embedded nanowire superlattices (NWSLs) of wurtzite structure that includes a coupled, strain dependent 8-band $\mathbf{k\cdot p}$ Hamiltonian in cylindrical coordinates and investigate the influence of coupled piezo-electromechanical effects on the barrier localization and critical radius in such NWSLs. The coupled piezo-electromechanical model for semiconductor materials takes into account the strain, piezoelectric effects and spontaneous polarization. Based on the developed 3D model, the band structures of electrons (holes) obtained from results of modeling in Cartesian coordinates are in good agreement with those values obtained from our earlier developed 2D model in cylindrical coordinates. Several parameters such as lattice mismatch, piezo-electric fields, valence and conduction band offsets at the heterojunction of $\mathrm{Al_xGa_{1-x}N/GaN}$ supperlattice can be varied as a function of the Al mole fraction. When the band offsets at the heterojunction of $\mathrm{Al_xGa_{1-x}N/GaN}$ are very small and the influence of the piezo-electromechanical effects can be minimized, then the barrier material can no longer be treated as an infinite potential well. In this situation, it is possible to visualize the penetration of the Bloch wave function into the barrier material that provides an estimation of critical radii of NWSLs. In this case, the NWSLs can act as inversion layers. Finally, we investigate the influence of symmetry of the square and cylindrical NWSLs on the band structures of electrons in the conduction band.

preprint2013arXiv

Electrical control of phonon mediated spin relaxation rate in semiconductor quantum dots: the Rashba vs the Dresselhaus spin-orbit couplings

In symmetric quantum dots (QDs), it is well known that the spin-hot spot (i.e., the cusp-like structure due to the presence of degeneracy near the level or anticrossing point) is present for the pure Rashba case but is absent for the pure Dresselhaus case [Phys. Rev. Lett. 95, 076805 (2005)]. Since the Dresselhaus spin-orbit coupling dominates over the Rashba spin-orbit coupling in GaAs and GaSb QDs, it is important to find the exact location of the spin-hot spot or the cusp-like structure even for the pure Dresselhaus case. In this paper, for the first time, we present analytical and numerical results that show that the spin-hot spot can also be seen for the pure Dresselhaus spin-orbit coupling case by inducing large anisotropy through external gates. At or nearby the spin-hot spot, the spin transition rate enhances and the decoherence time reduces by several orders of magnitude compared to the case with no spin-hot spot. Thus one should avoid such locations when designing QD spin based transistors for the possible implementation in quantum logic gates, solid state quantum computing and quantum information processing. It is also possible to extract the exact experimental data (Phys. Rev. Lett. 100, 046803 (2008)) for the phonon mediated spin-flip rates from our developed theoretical model.

preprint2013arXiv

Spin echo dynamics under an applied drift field in graphene nanoribbon superlattices

We investigate the evolution of spin dynamics in graphene nanoribbon superlattices (GNSLs) with armchair and zigzag edges in the presence of a drift field. We determine the exact evolution operator and show that it exhibits spin echo phenomena due to rapid oscillations of the quantum states along the ribbon. The evolution of the spin polarization is accompanied by strong beating patterns. We also provide detailed analysis of the band structure of GNSLs with armchair and zigzag edges.

preprint2013arXiv

Spin transition rates in nanowire superlattices: Rashba spin-orbit coupling effects

We investigate the influence of Rashba spin-orbit coupling in a parabolic nanowire modulated by longitudinal periodic potential. The modulation potential can be obtained from realistically grown supperlattices (SLs). Our study shows that the Rashba spin-orbit interaction induces the level crossing point in the parabolic nanowire SLs. We estimate large anticrossing width (approximately 117 $μeV$) between singlet-triplet states. We study the phonon and electromagnetic field mediated spin transition rates in the parabolic nanowire SLs. We report that the phonon mediated spin transition rate is several order of magnitude larger than the electromagnetic field mediated spin transition rate. Based on the Feynman disentangling technique, we find the exact spin transition probability. For the case wave vector $k=0$, we report that the transition probability can be tuned in the form of resonance at fixed time interval. For the general case ($k\neq 0$), we solve the Riccati equation and find that the arbitrary values of $k$ induces the damping in the transition probability. At large value of Rashba spin-orbit coupling coefficients for ($k\neq 0$), spin transition probability freezes.

preprint2012arXiv

Anisotropic effects and phonon induced spin relaxation in gate-controlled semiconductor quantum dots

In this paper, a detailed analysis of anisotropic effects on the phonon induced spin relaxation rate in III-V semiconductor quantum dots (QDs) is carried out. We show that the accidental degeneracy due to level crossing between the first and second excited states of opposite electron spin states in both isotropic and anisotropic QDs can be manipulated with the application of externally applied gate potentials. In particular, anisotropic gate potentials enhance the phonon mediated spin-flip rate and reduce the cusp-like structure to lower magnetic fields, in addition to the lower QDs radii in III-V semiconductor QDs. In InAs QDs, only the Rashba spin-orbit coupling contributes to the phonon induced spin relaxation rate. However, for GaAs QDs, the Rashba spin-orbit coupling has a contribution near the accidental degeneracy point and the Dresselhaus spin-orbit coupling has a contribution below and above the accidental degeneracy point in the manipulation of phonon induced spin relaxation rates in QDs.

preprint2012arXiv

Temperature dependent elastic constants and ultimate strength of graphene and graphyne

Based on the first principles calculation combined with quasi-harmonic approximation, in this work we focus on the analysis of temperature dependent lattice geometries, thermal expansion coefficients, elastic constants and ultimate strength of graphene and graphyne. For the linear thermal expansion coefficient, both graphene and graphyne show a negative region in the low temperature regime. This coefficient increases up to be positive at high temperatures. Graphene has superior mechanical properties, with Young modulus E11=371.0 N/m, E22=378.2 N/m and ultimate tensile strength of 119.2 GPa at room temperature. Based on our analysis, it is found that graphene's mechanical properties have strong resistance against temperature increase up to 1200 K. Graphyne also shows good mechanical properties, with Young modulus E11=224.7 N/m, E22=223.9 N/m and ultimate tensile strength of 81.2 GPa at room temperature, but graphyne's mechanical properties have a weaker resistance with respect to the increase of temperature than that of graphene.

preprint2012arXiv

Temperature dependent elastic constants for crystals with arbitrary symmetry: combined first principles and continuum elasticity theory

To study temperature dependent elastic constants, a new computational method is proposed by combining continuum elasticity theory and first principles calculations. A Gibbs free energy function with one variable with respect to strain at given temperature and pressure was derived, hence the full minimization of the Gibbs free energy with respect to temperature and lattice parameters can be put into effective operation by using first principles. Therefore, with this new theory, anisotropic thermal expansion and temperature dependent elastic constants can be obtained for crystals with arbitrary symmetry. In addition, we apply our method to hexagonal beryllium, hexagonal diamond and cubic diamond to illustrate its general applicability.

preprint2011arXiv

Hydrogen-doped cubic diamond and the crystal structure of n-diamond

To understand the crystal structure of n-diamond, a hydrogen-doped (H-doped) diamond model has been investigated using first principles calculations. In particular, hydrogen concentration dependent elastic constants and lattice parameters for the H-doped diamond have been analyzed. Our results indicate that when the hydrogen concentration is less than 19 at.%, the H-doped diamond is mechanically stable. When the hydrogen concentration is about 4 at.%, the optimized lattice parameter, simulated XRD pattern and electronic properties for the H-doped diamond all agree well with the corresponding experimental values of n-diamond. The results imply that the n-diamond is likely to be an H-doped diamond.

preprint2011arXiv

Manipulation of single electron spin in a GaAs quantum dot through the application of geometric phases: The Feynman disentangling technique

The spin of a single electron in an electrically defined quantum dot in a 2DEG can be manipulated by moving the quantum dot adiabatically in a closed loop in the 2D plane under the influence of applied gate potentials. In this paper we present analytical expressions and numerical simulations for the spin-flip probabilities during the adiabatic evolution in the presence of the Rashba and Dresselhaus linear spin-orbit interactions. We use the Feynman disentanglement technique to determine the non-Abelian Berry phase and we find exact analytical expressions for three special cases: (i) the pure Rashba spin-orbit coupling, (ii) the pure Dresselhause linear spin-orbit coupling, and (iii) the mixture of the Rashba and Dresselhaus spin-orbit couplings with equal strength. For a mixture of the Rashba and Dresselhaus spin-orbit couplings with unequal strengths, we obtain simulation results by solving numerically the Riccati equation originating from the disentangling procedure. We find that the spin-flip probability in the presence of the mixed spin-orbit couplings is generally larger than those for the pure Rashba case and for the pure Dresselhaus case, and that the complete spin-flip takes place only when the Rashba and Dresselhaus spin-orbit couplings are mixed symmetrically.

preprint2011arXiv

Manipulation of the Land$\acute{\text{e}}$ g-factor in InAs quantum dots through the application of anisotropic gate potentials: Exact diagonalization, numerical and perturbation methods

We study the variation in the Land$\acute{\text{e}}$ g-factor of electron spins induced by both anisotropic gate potentials and magnetic fields in InAs quantum dots for possible implementation towards solid state quantum computing. In this paper, we present analytical expressions and numerical simulations of the variation in the Land$\acute{\text{e}}$ g-factor for both isotropic and anisotropic quantum dots. Using both analytical techniques and numerical simulations, we show that the Rashba spin-orbit coupling has a major contribution in the variation of the g-factor with electric fields before the regime, where level crossing or anticrossing occurs. In particular, the electric field tunability is shown to cover a wide range of g-factor through strong Rashba spin-orbit interaction. Another major result of this paper is that the anisotropic gate potential gives quenching effect in the orbital angular momentum that reduces the variation in the E-field and B-field tunability of the g-factor if the area of the symmetric and asymmetric quantum dots is held constant. We identify level crossings and anticrossings of the electron states in the variation of the Land$\acute{\text{e}}$ g-factor. We model the wavefunctions of electron spins and estimate the size of the anticrossing for the spin states $|0,-1,+1/2>$ and $|0,0,-1/2>$ corresponding to a quantum dot that has been recently studied experimentally (Phys. Rev. Lett. \textbf{104}, 246801 (2010)).

preprint2010arXiv

Coarse Graining RNA Nanostructures for Molecular Dynamics Simulations

A series of coarse-grained models have been developed for the study of the molecular dynamics of RNA nanostructures. The models in the series have one to three beads per nucleotide and include different amounts of detailed structural information. Such a treatment allows us to reach, for the systems of thousands of nucleotides, a time scale of microseconds (i.e. by three orders of magnitude longer than in the full atomistic modelling) and thus to enable simulations of large RNA polymers in the context of bionanotechnology. We find that the 3-beads-per-nucleotide models, described by a set of just a few universal parameters, are able to describe different RNA conformations and are comparable in structural precision to the models where detailed values of the backbone P-C4' dihedrals taken from a reference structure are included. These findings are discussed in the context of the RNA conformation classes.

preprint2010arXiv

Multiband Hamiltonians of the Luttinger-Kohn Theory and Ellipticity Requirements

Modern applications require a robust and theoretically strong tool for the realistic modeling of electronic states in low dimensional nanostructures. The $k \cdot p$ theory has fruitfully served this role for the long time since its creation. During last two decades several problems have been detected in connection with the application of the $k \cdot p$ approach to such nanostructures. These problems are closely related to the violation of the ellipticity conditions for the underlying system, the fact that until recently has been largely overlooked. We demonstrate that in many cases the models derived by a formal application of the Luttinger-Kohn theory fail to satisfy the ellipticity requirements. The detailed analysis, presented here on an example of the $6 \times 6$ Hamiltonians, shows that this failure has a strong impact on the physically important properties conventionally studied with these models.