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Researcher profile

Sanjay Prabhakar

Sanjay Prabhakar contributes to research discovery and scholarly infrastructure.

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Published work

13 published item(s)

preprint2014arXiv

Gate control of Berry phase in III-V semiconductor quantum dots

Berry phase in semiconductor quantum dots (QDs) can be induced by moving the dots adiabatically in a closed loop with the application of the distortion potential in the lateral direction. We show that the Berry phase is highly sensitive to the electric fields arising from the interplay between the Rashba and the Dresselhaus spin-orbit couplings. We report that the accumulated Berry phase can be induced from other available quantum state that are only differed by one quantum number of the same spin state. The sign change in the g-factor due to the penetration of the Bloch wavefunctions into the barrier material can be reflected in the Berry phase. We solve the time dependent Schr$\mathrm{\ddot{o}}$dinger equation and investigate the evolution of the spin dynamics during the adiabatic movement of the QDs in the 2D plane. Our results might open the possibilities of building a topological quantum dot quantum computer where the Berry phase can be engineered and can be manipulated with the application of the spin-orbit couplings through gate controlled electric fields.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Geometric spin manipulation in semiconductor quantum dots

We propose a method to flip the spin completely by an adiabatic transport of quantum dots. We show that it is possible to flip the spin by inducing a geometric phase on the spin state of a quantum dot. We estimate the geometric spin flip time (approximately 2 pico-sec) which turned out to be much shorter than the experimentally reported decoherence time (approx. 100 nano-sec) that would provide an alternative means of fliping the spin before reaching decoherence. It is important that both the Rashba coupling and the Dresselhaus coupling are present for inducing a phase necessary for spin flip. If one of them is absent, the induced phase is trivial and irrelevant for spin-flip.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin relaxation in strained graphene nanoribbons: armchair vs zigzag edges

We study the influence of ripple waves originating from the electromechanical effects on spin relaxation caused by electromagnetic fields in armchair and zigzag graphene nanoribbons (GNRs). By utilizing analytical expressions supported by numerical simulations, we show that it is possible to tune the spin flip behaviors ON and OFF due to ripple waves in GNRs for potential applications in straintronic devices. This finding is similar to recently made observations on the design of spintronic devices in III-V semiconductor quantum dots, where the sign change in the effective Land$\mathrm{\acute{e}}$ $g$-factor can be engineered with the application of gate controlled electric fields. In particular, we show that the tuning of spin extends to larger widths for the armchair GNRs than for the zigzag GNRs. Here we also report that the relaxation rate vanishes like $L^5$.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Thermo-electromechanical effects in relaxed shape graphene and bandstructures of graphene quantum dots

We investigate the in-plane oscillations of the relaxed shape graphene due to externally applied tensile edge stress along both the armchair and zigzag directions. We show that the total elastic energy density is enhanced with temperature for the case of applied tensile edge stress along the zigzag direction. Thermo-electromechanical effects are treated via pseudomorphic vector potentials to analyze the influence of these coupled effects on the bandstructures of bilayer graphene quantum dots (QDs). We report that the level crossing between ground and first excited states in the localized edge states can be achieved with the accessible values of temperature. In particular, the level crossing point extends to higher temperatures with decreasing values of externally applied tensile edge stress along the armchair direction. This kind of level crossings is absent in the states formed at the center of the graphene sheet due to the presence of three fold symmetry.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Coupled multiphysics, barrier localization, and critical radius effects in embedded nanowire superlattices

The new contribution of this paper is to develop a cylindrical representation of an already known multiphysics model for embedded nanowire superlattices (NWSLs) of wurtzite structure that includes a coupled, strain dependent 8-band $\mathbf{k\cdot p}$ Hamiltonian in cylindrical coordinates and investigate the influence of coupled piezo-electromechanical effects on the barrier localization and critical radius in such NWSLs. The coupled piezo-electromechanical model for semiconductor materials takes into account the strain, piezoelectric effects and spontaneous polarization. Based on the developed 3D model, the band structures of electrons (holes) obtained from results of modeling in Cartesian coordinates are in good agreement with those values obtained from our earlier developed 2D model in cylindrical coordinates. Several parameters such as lattice mismatch, piezo-electric fields, valence and conduction band offsets at the heterojunction of $\mathrm{Al_xGa_{1-x}N/GaN}$ supperlattice can be varied as a function of the Al mole fraction. When the band offsets at the heterojunction of $\mathrm{Al_xGa_{1-x}N/GaN}$ are very small and the influence of the piezo-electromechanical effects can be minimized, then the barrier material can no longer be treated as an infinite potential well. In this situation, it is possible to visualize the penetration of the Bloch wave function into the barrier material that provides an estimation of critical radii of NWSLs. In this case, the NWSLs can act as inversion layers. Finally, we investigate the influence of symmetry of the square and cylindrical NWSLs on the band structures of electrons in the conduction band.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrical control of phonon mediated spin relaxation rate in semiconductor quantum dots: the Rashba vs the Dresselhaus spin-orbit couplings

In symmetric quantum dots (QDs), it is well known that the spin-hot spot (i.e., the cusp-like structure due to the presence of degeneracy near the level or anticrossing point) is present for the pure Rashba case but is absent for the pure Dresselhaus case [Phys. Rev. Lett. 95, 076805 (2005)]. Since the Dresselhaus spin-orbit coupling dominates over the Rashba spin-orbit coupling in GaAs and GaSb QDs, it is important to find the exact location of the spin-hot spot or the cusp-like structure even for the pure Dresselhaus case. In this paper, for the first time, we present analytical and numerical results that show that the spin-hot spot can also be seen for the pure Dresselhaus spin-orbit coupling case by inducing large anisotropy through external gates. At or nearby the spin-hot spot, the spin transition rate enhances and the decoherence time reduces by several orders of magnitude compared to the case with no spin-hot spot. Thus one should avoid such locations when designing QD spin based transistors for the possible implementation in quantum logic gates, solid state quantum computing and quantum information processing. It is also possible to extract the exact experimental data (Phys. Rev. Lett. 100, 046803 (2008)) for the phonon mediated spin-flip rates from our developed theoretical model.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin echo dynamics under an applied drift field in graphene nanoribbon superlattices

We investigate the evolution of spin dynamics in graphene nanoribbon superlattices (GNSLs) with armchair and zigzag edges in the presence of a drift field. We determine the exact evolution operator and show that it exhibits spin echo phenomena due to rapid oscillations of the quantum states along the ribbon. The evolution of the spin polarization is accompanied by strong beating patterns. We also provide detailed analysis of the band structure of GNSLs with armchair and zigzag edges.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin transition rates in nanowire superlattices: Rashba spin-orbit coupling effects

We investigate the influence of Rashba spin-orbit coupling in a parabolic nanowire modulated by longitudinal periodic potential. The modulation potential can be obtained from realistically grown supperlattices (SLs). Our study shows that the Rashba spin-orbit interaction induces the level crossing point in the parabolic nanowire SLs. We estimate large anticrossing width (approximately 117 $μeV$) between singlet-triplet states. We study the phonon and electromagnetic field mediated spin transition rates in the parabolic nanowire SLs. We report that the phonon mediated spin transition rate is several order of magnitude larger than the electromagnetic field mediated spin transition rate. Based on the Feynman disentangling technique, we find the exact spin transition probability. For the case wave vector $k=0$, we report that the transition probability can be tuned in the form of resonance at fixed time interval. For the general case ($k\neq 0$), we solve the Riccati equation and find that the arbitrary values of $k$ induces the damping in the transition probability. At large value of Rashba spin-orbit coupling coefficients for ($k\neq 0$), spin transition probability freezes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Anisotropic effects and phonon induced spin relaxation in gate-controlled semiconductor quantum dots

In this paper, a detailed analysis of anisotropic effects on the phonon induced spin relaxation rate in III-V semiconductor quantum dots (QDs) is carried out. We show that the accidental degeneracy due to level crossing between the first and second excited states of opposite electron spin states in both isotropic and anisotropic QDs can be manipulated with the application of externally applied gate potentials. In particular, anisotropic gate potentials enhance the phonon mediated spin-flip rate and reduce the cusp-like structure to lower magnetic fields, in addition to the lower QDs radii in III-V semiconductor QDs. In InAs QDs, only the Rashba spin-orbit coupling contributes to the phonon induced spin relaxation rate. However, for GaAs QDs, the Rashba spin-orbit coupling has a contribution near the accidental degeneracy point and the Dresselhaus spin-orbit coupling has a contribution below and above the accidental degeneracy point in the manipulation of phonon induced spin relaxation rates in QDs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots

We study the anisotropic orbital effect in the electric field tunability of the phonon induced spin-flip rate in quantum dots (QDs). Our study shows that anisotropic gate potential enhances the spin-flip rate and reduces the level crossing point to a lower quantum dot radius due to the suppression of the Land$\acute{e}$ g-factor towards bulk crystal. In the range of $10^4-10^6$ V/cm, the electric field tunability of the phonon induced spin-flip rate can be manipulated through strong Dresselhaus spin-orbit coupling. These results might assist the development of a spin based solid state quantum computer by manipulating phonon induced spin-flip rate through spin-orbit coupling with the application of anisotropic gate potential in a regime where the g-factor changes its sign.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Manipulation of single electron spin in a GaAs quantum dot through the application of geometric phases: The Feynman disentangling technique

The spin of a single electron in an electrically defined quantum dot in a 2DEG can be manipulated by moving the quantum dot adiabatically in a closed loop in the 2D plane under the influence of applied gate potentials. In this paper we present analytical expressions and numerical simulations for the spin-flip probabilities during the adiabatic evolution in the presence of the Rashba and Dresselhaus linear spin-orbit interactions. We use the Feynman disentanglement technique to determine the non-Abelian Berry phase and we find exact analytical expressions for three special cases: (i) the pure Rashba spin-orbit coupling, (ii) the pure Dresselhause linear spin-orbit coupling, and (iii) the mixture of the Rashba and Dresselhaus spin-orbit couplings with equal strength. For a mixture of the Rashba and Dresselhaus spin-orbit couplings with unequal strengths, we obtain simulation results by solving numerically the Riccati equation originating from the disentangling procedure. We find that the spin-flip probability in the presence of the mixed spin-orbit couplings is generally larger than those for the pure Rashba case and for the pure Dresselhaus case, and that the complete spin-flip takes place only when the Rashba and Dresselhaus spin-orbit couplings are mixed symmetrically.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Manipulation of the Land$\acute{\text{e}}$ g-factor in InAs quantum dots through the application of anisotropic gate potentials: Exact diagonalization, numerical and perturbation methods

We study the variation in the Land$\acute{\text{e}}$ g-factor of electron spins induced by both anisotropic gate potentials and magnetic fields in InAs quantum dots for possible implementation towards solid state quantum computing. In this paper, we present analytical expressions and numerical simulations of the variation in the Land$\acute{\text{e}}$ g-factor for both isotropic and anisotropic quantum dots. Using both analytical techniques and numerical simulations, we show that the Rashba spin-orbit coupling has a major contribution in the variation of the g-factor with electric fields before the regime, where level crossing or anticrossing occurs. In particular, the electric field tunability is shown to cover a wide range of g-factor through strong Rashba spin-orbit interaction. Another major result of this paper is that the anisotropic gate potential gives quenching effect in the orbital angular momentum that reduces the variation in the E-field and B-field tunability of the g-factor if the area of the symmetric and asymmetric quantum dots is held constant. We identify level crossings and anticrossings of the electron states in the variation of the Land$\acute{\text{e}}$ g-factor. We model the wavefunctions of electron spins and estimate the size of the anticrossing for the spin states $|0,-1,+1/2>$ and $|0,0,-1/2>$ corresponding to a quantum dot that has been recently studied experimentally (Phys. Rev. Lett. \textbf{104}, 246801 (2010)).

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Gate control of a quantum dot single-electron spin in realistic confining potentials: anisotropy effects

Among recent proposals for next-generation, non-charge-based logic is the notion that a single electron can be trapped and its spin can be manipulated through the application of gate potentials. In this paper, we present numerical simulations of such spins in single electron devices for realistic (asymmetric) confining potentials in two-dimensional electrostatically confined quantum dots. Using analytical and numerical techniques we show that breaking the in-plane rotational symmetry of the confining potential leads to a significant effect on the tunability of the g-factor with applied gate potentials. In particular, anisotropy extends the range of tunability to larger quantum dots.

0 citations0 reviewsNo code linkedOpen access