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Long You

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phcond-mat.str-el

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Published work

7 published item(s)

preprint2026arXiv

Nonlinear spin-Wave Doppler effect for flexible tuning of magnonic frequencies

We theoretically propose a nonlinear spin-wave Doppler effect, in which the time-dependent motion of a magnetic energy boundary acts as an active frequency modulator, directly converting boundary-induced phase dynamics into instantaneous spectral synthesis for propagating spin-wave modes. In contrast to the conventional linear Doppler effect governed by constant relative velocity, this mechanism enables dynamic phase-to-frequency transduction, generating high-order harmonics, magnonic frequency combs, and coherent chirped sidebands, without requiring nonlinear magnon-magnon coupling or multi-magnon scattering. Micromagnetic simulations on voltage-controlled anisotropy boundaries in ferroelectric/ferromagnetic (FE/FM) heterostructures demonstrate that the comb spacing and spectral topology are determined solely by boundary kinematics, confirming direct Doppler phase coupling between boundary motion and spin-wave propagation. These results establish moving magnetic-energy boundaries as a new class of on-chip spectral synthesizers and define a coherent and energy-efficient framework for flexible tuning of magnonic frequencies, fundamentally distinct from traditional passive scattering or nonlinear multi-magnon mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Nanoscale three-dimensional magnetic sensing with a probabilistic nanomagnet driven by spin-orbit torque

Detection of vector magnetic fields at nanoscale dimensions is critical in applications ranging from basic material science, to medical diagnostic. Meanwhile, an all-electric operation is of great significance for achieving a simple and compact sensing system. Here, we propose and experimentally demonstrate a simple approach to sensing a vector magnetic field at nanoscale dimensions, by monitoring a probabilistic nanomagnet's transition probability from a metastable state, excited by a driving current due to SOT, to a settled state. We achieve sensitivities for Hx, Hy, and Hz of 1.02%/Oe, 1.09%/Oe and 3.43%/Oe, respectively, with a 200 x 200 nm^2 nanomagnet. The minimum detectable field is dependent on the driving pulse events N, and is expected to be as low as 1 uT if N = 3 x 10^6.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Voltage-Induced Inertial Domain Wall Motion in an Antiferromagnetic Nanowire

Racetrack memory based on magnetic domain walls (DWs) motion exhibits advantages of small volume and high reading speed. When compared to current-induced DW motion, voltage-induced DW motion exhibits lower dissipation. On the other hand, the DW in an antiferromagnet (AFM) moves at a high velocity with weak stray field. In this work, the AFM DW motion induced by a gradient of magnetic anisotropy energy under a voltage pulse has been investigated in theory. The dynamics equation for the DW motion was derived. The solution indicates that the DW velocity is higher than 100 m/s, and because of inertia, the DW is able to keep moving at a speed of around 100 m/s for several nano seconds after turning off the voltage in a period of pulse. The mechanism for this DW inertia is explained based on the Lagrangian route. On the other hand, a spin wave is emitted while the DW is moving, yet the DW is still able to move at an ever increasing velocity with enlarging DW width. This indicates energy loss from emission of spin wave is less than the energy gain from the effective field of the gradient of anisotropy energy.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Single Crystal Functional Oxides on Silicon

Single crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism etc. that have the potential for completely new electronic applications (1-2). Direct synthesis of such oxides on Si remains challenging due to the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces (3-16). Here we report integration of thin (down to 1 unit cell) single crystalline, complex oxide films onto Si substrates, by epitaxial transfer at room temperature. In a field effect transistor using a transferred Pb0.2Zr0.8TiO3 (PZT) layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single crystal functional oxides on-demand on silicon.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Switching of Perpendicularly Polarized Nanomagnets with Spin Orbit Torque without an External Magnetic Field by Engineering a Tilted Anisotropy

Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-plane current generated SOT cannot deterministically switch a perpendicularly polarized magnet due to symmetry reasons. On the other hand, perpendicularly polarized magnets are preferred over in-plane magnets for high-density data storage applications due to their significantly larger thermal stability in ultra-scaled dimensions. Here we show that it is possible switch a perpendicularly polarized magnet by SOT without needing an external magnetic field. This is accomplished by engineering an anisotropy in the magnets such that the magnetic easy axis slightly tilts away from the film-normal. Such a tilted anisotropy breaks the symmetry of the problem and makes it possible to switch the magnet deterministically. Using a simple Ta/CoFeB/MgO/Ta heterostructure, we demonstrate reversible switching of the magnetization by reversing the polarity of the applied current. This demonstration presents a new approach for controlling nanomagnets with spin orbit torque.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Deterministic Domain Wall Motion Orthogonal To Current Flow Due To Spin Orbit Torque

Deterministic control of domain walls orthogonal to the direction of current flow is demonstrated by exploiting spin orbit torque in a perpendicularly polarized Ta/CoFeB/MgO multilayer in presence of an in-plane magnetic field. Notably, such orthogonal motion with respect to current flow is not possible from traditional spin transfer torque driven domain wall propagation even in presence of an external magnetic field. Reversing the polarity of either the current flow or the in-plane field is found to reverse the direction of the domain wall motion. From these measurements, which are unaffected by any conventional spin transfer torque by symmetry, we estimate the spin orbit torque efficiency of Ta to be 0.08.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Negative Capacitance in a Ferroelectric Capacitor

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time-in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this inductance-like behavior from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

0 citations0 reviewsNo code linkedOpen access