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Jeffrey Bokor

Jeffrey Bokor appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

14 published item(s)

preprint2022arXiv

Growth optimization and device integration of narrow-bandgap graphene nanoribbons

The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, we study the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal band gap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultra-high vacuum conditions from Br- and I-substituted precursors. We show that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed us to integrate 5-AGNRs into devices and to realize the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. Our study highlights that optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Picosecond Spin-Orbit Torque Induced Coherent Magnetization Switching in a Ferromagnet

Electrically controllable non-volatile magnetic memories show great potential for the replacement of semiconductor-based technologies. Recently there has been strong interest in spin-orbit torque (SOT) induced magnetization reversal due to the device's increased lifetime and speed of operation. However, recent SOT switching studies reveal an incubation delay in the ~ns range due to stochasticity in the nucleation of a magnetic domain during reversal. Here, we experimentally demonstrate ultrafast SOT-induced magnetization switching dynamics of a ferromagnet with no incubation delay by avoiding the nucleation process and driving the magnetization coherently. We employ an ultrafast photo-conducting switch and a co-planar strip line to generate and guide ~ps current pulses into the heavy metal/ferromagnet layer stack and induce ultrafast SOT. We use magneto-optical probing to investigate the magnetization switching dynamics with sub-picosecond time resolution. Depending on the relative current pulse and in-plane magnetic field polarities, we observe either an ultrafast demagnetization and subsequent recovery along with a SOT-induced precessional oscillation, or ultrafast SOT switching. The magnetization zero-crossing occurs in ~70 ps, which is approximately an order of magnitude faster than previous studies. Complete switching needs ~250 ps and is limited by the heat diffusion to the substrate. We use a macro-magnetic simulation coupled with an ultrafast heating model to analyze the effect of ultrafast thermal anisotropy torque and current-induced torque in the observed dynamics. Good agreement between our experimental results and the macro-spin model shows that the switching dynamics are coherent and present no noticeable incubation delay. Our work suggests a potential pathway toward dramatically increasing the writing speed of SOT magnetic random-access memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Scaling and Statistics of Bottom-Up Synthesized Armchair Graphene Nanoribbon Transistors

Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or structural parameters obtained from advanced microscopy and measured electrical characteristics when they are made into macroscopic devices. Here, we propose a strategy to connect the nanomaterial morphologies and the device performance through a Monte Carlo device model and apply it to understand the scaling trends of bottom-up synthesized armchair graphene nanoribbon (GNR) transistors. A new nanofabrication process is developed for GNR transistors with channel length down to 7 nm. The impacts of the GNR spatial distributions and the device geometries on the device performance are investigated systematically through comparison of experimental data with the model. Through this study, challenges and opportunities of transistor technologies based on bottom-up synthesized GNRs are pinpointed, paving the way to the further improvement of the GNR device performance for future transistor technology nodes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Role of Element-Specific Damping on the Ultrafast, Helicity-Independent All-Optical Switching Dynamics in Amorphous (Gd,Tb)Co Thin Films

Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching (HI-AOS) of the magnetization has thus far only been observed in Gd-based, ferrimagnetic amorphous (\textit{a}-) rare earth-transition metal (\textit{a}-RE-TM) systems, and a comprehensive understanding of the reversal mechanism remains elusive. Here, we report HI-AOS in ferrimagnetic \textit{a}-Gd$_{22-x}$Tb$_x$Co$_{78}$ thin films, from x = 0 to x = 18, and elucidate the role of Gd in HI-AOS in \textit{a}-RE-TM alloys and multilayers. Increasing Tb content results in increasing perpendicular magnetic anisotropy and coercivity, without modifying magnetization density, and slower remagnetization rates and higher critical fluences for switching but still shows picosecond HI-AOS. Simulations of the atomistic spin dynamics based on the two-temperature model reproduce these results qualitatively and predict that the lower damping on the RE sublattice arising from the small spin-orbit coupling of Gd (with $L = 0$) is instrumental for the faster dynamics and lower critical fluences of the Gd-rich alloys. Annealing \textit{a}-Gd$_{10}$Tb$_{12}$Co$_{78}$ leads to slower dynamics which we argue is due to an increase in damping. These simulations strongly indicate that acounting for element-specific damping is crucial in understanding HI-AOS phenomena. The results suggest that engineering the element specific damping of materials can open up new classes of materials that exhibit low-energy, ultrafast HI-AOS.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electron-phonon interaction during optically induced ultrafast magnetization dynamics of Au/GdFeCo bilayers

The temperature evolution of GdFeCo electrons following optical heating plays a key role in all optical switching of GdFeCo and is primarily governed by the strength of coupling between electrons and phonons. Typically, the strength of electron-phonon coupling in a metal is deduced by monitoring changes in reflectance following optical heating and then analyzing the transient reflectance with a simple two-temperature thermal model. In a magnetic metal, the change in reflectance cannot be assumed to depend only the electron and phonon temperatures because a metal's reflectance also depends on the magnetization. To deduce the electron-phonon coupling constant in GdFeCo, we analyze thermal transport in Au and GdFeCo bilayers following optical heating of the GdFeCo electrons. We use the reflectance of the Au layer to monitor the temperature evolution of the Au phonons. By interpreting the response of the bilayer to heating with a thermal model, we determine the electron-phonon coupling constant in GdFeCo to be 6 x 10^17 W/(m^3-K) corresponding to an electron-phonon relaxation time in GdFeCo of ~150 fs.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Model for multi-shot all-thermal all-optical switching in ferromagnets

All optical magnetic switching (AOS) is a recently observed rich and puzzling phenomenon that offers promis- ing technological applications. However, fundamental understanding of the underlying mechanisms remains elusive. Here we present a new model for multi-shot helicity-dependent AOS in ferromagnetic materials based on a purely heat-driven mechanism in the presence of Magnetic Circular Dichroism (MCD). We predict that AOS should be possible with as little as 0.5% of MCD, after a minimum number of laser shots. Finally, we re- produce previous AOS results by simulating the sweeping of a laser beam on an FePtC granular ferromagnetic film.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

The role of electron and phonon temperatures in the helicity-independent all-optical switching of GdFeCo

Ultrafast optical heating of the electrons in ferrimagnetic metals can result in all-optical switching (AOS) of the magnetization. Here we report quantitative measurements of the temperature rise of GdFeCo thin films during helicity-independent AOS. Critical switching fluences are obtained as a function of the initial temperature of the sample and for laser pulse durations from 55 fs to 15 ps. We conclude that non-equilibrium phenomena are necessary for helicity-independent AOS, although the peak electron temperature does not play a critical role. Pump-probe time-resolved experiments show that the switching time increases as the pulse duration increases, with 10 ps pulses resulting in switching times of ~sim 13 ps. These results raise new questions about the fundamental mechanism of helicity-independent AOS.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Switching of Perpendicularly Polarized Nanomagnets with Spin Orbit Torque without an External Magnetic Field by Engineering a Tilted Anisotropy

Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-plane current generated SOT cannot deterministically switch a perpendicularly polarized magnet due to symmetry reasons. On the other hand, perpendicularly polarized magnets are preferred over in-plane magnets for high-density data storage applications due to their significantly larger thermal stability in ultra-scaled dimensions. Here we show that it is possible switch a perpendicularly polarized magnet by SOT without needing an external magnetic field. This is accomplished by engineering an anisotropy in the magnets such that the magnetic easy axis slightly tilts away from the film-normal. Such a tilted anisotropy breaks the symmetry of the problem and makes it possible to switch the magnet deterministically. Using a simple Ta/CoFeB/MgO/Ta heterostructure, we demonstrate reversible switching of the magnetization by reversing the polarity of the applied current. This demonstration presents a new approach for controlling nanomagnets with spin orbit torque.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Deterministic Domain Wall Motion Orthogonal To Current Flow Due To Spin Orbit Torque

Deterministic control of domain walls orthogonal to the direction of current flow is demonstrated by exploiting spin orbit torque in a perpendicularly polarized Ta/CoFeB/MgO multilayer in presence of an in-plane magnetic field. Notably, such orthogonal motion with respect to current flow is not possible from traditional spin transfer torque driven domain wall propagation even in presence of an external magnetic field. Reversing the polarity of either the current flow or the in-plane field is found to reverse the direction of the domain wall motion. From these measurements, which are unaffected by any conventional spin transfer torque by symmetry, we estimate the spin orbit torque efficiency of Ta to be 0.08.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Speed and Reliability of Nanomagnetic Logic Technology

Nanomagnetic logic is an energy efficient computing architecture that relies on the dipole field coupling of neighboring magnets to transmit and process binary information. In this architecture, nanomagnet chains act as local interconnects. To assess the merits of this technology, the speed and reliability of magnetic signal transmission along these chains must be experimentally determined. In this work, time-resolved pump-probe x-ray photo-emission electron microscopy is used to observe magnetic signal transmission along a chain of nanomagnets. We resolve successive error-free switching events in a single nanomagnet chain at speeds on the order of 100 ps per nanomagnet, consistent with predictions based on micromagnetic modeling. Errors which disrupt transmission are also observed. We discuss the nature of these errors, and approaches for achieving reliable operation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Sub-nanosecond signal propagation in anisotropy engineered nanomagnetic logic chains

Energy efficient nanomagnetic logic (NML) computing architectures propagate and process binary information by relying on dipolar field coupling to reorient closely-spaced nanoscale magnets. Signal propagation in nanomagnet chains of various sizes, shapes, and magnetic orientations has been previously characterized by static magnetic imaging experiments with low-speed adiabatic operation; however the mechanisms which determine the final state and their reproducibility over millions of cycles in high-speed operation (sub-ns time scale) have yet to be experimentally investigated. Monitoring NML operation at its ultimate intrinsic speed reveals features undetectable by conventional static imaging including individual nanomagnetic switching events and systematic error nucleation during signal propagation. Here, we present a new study of NML operation in a high speed regime at fast repetition rates. We perform direct imaging of digital signal propagation in permalloy nanomagnet chains with varying degrees of shape-engineered biaxial anisotropy using full-field magnetic soft x-ray transmission microscopy after applying single nanosecond magnetic field pulses. Further, we use time-resolved magnetic photo-emission electron microscopy to evaluate the sub-nanosecond dipolar coupling signal propagation dynamics in optimized chains with 100 ps time resolution as they are cycled with nanosecond field pulses at a rate of 3 MHz. An intrinsic switching time of 100 ps per magnet is observed. These experiments, and accompanying macro-spin and micromagnetic simulations, reveal the underlying physics of NML architectures repetitively operated on nanosecond timescales and identify relevant engineering parameters to optimize performance and reliability.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Bottom-up Graphene Nanoribbon Field-Effect Transistors

Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nanoscale chemically synthesized GNR field-effect transistors, made possible by development of a new layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1nm width GNRs.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Diameter-Dependent Electron Mobility of InAs Nanowires

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally-activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are investigated while enabling the accurate measurement of the gate oxide capacitance; therefore, leading to the direct assessment of the field-effect mobility for electrons. The field-effect mobility is found to monotonically decrease as the radius is reduced to sub-10 nm, with the low temperature transport data clearly highlighting the drastic impact of the surface roughness scattering on the mobility degradation for miniaturized nanowires. More generally, the approach presented here may serve as a versatile and powerful platform for in-depth characterization of nanoscale, electronic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Simulation Studies of Nanomagnet-Based Architecture

We report a simulation study on interacting ensembles of Co nanomagnets that can perform basic logic operations and propagate logic signals, where the state variable is the magnetization direction. Dipole field coupling between individual nanomagnets drives the logic functionality of the ensemble and coordinated arrangements of the nanomagnets allow for the logic signal to propagate in a predictable way. Problems with the integrity of the logic signal arising from instabilities in the constituent magnetizations are solved by introducing a biaxial anisotropy term to the Gibbs magnetic free energy of each nanomagnet. The enhanced stability allows for more complex components of a logic architecture capable of random combinatorial logic, including horizontal wires, vertical wires, junctions, fanout nodes, and a novel universal logic gate. Our simulations define the focus of scaling trends in nanomagnet-based logic and provide estimates of the energy dissipation and time per nanomagnet reversal.

0 citations0 reviewsNo code linkedOpen access